DOI: 10.1063/1.2889959. Top-gated graphene field-effect-transistors formed by decomposition of SiC

Top-gated graphene field-effect-transistors formed by decomposition of SiC

10.1063/1.2889959

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Top-gated, few-layer graphene field-effect transistors (FETs) fabricated on thermally decomposed semi-insulating 4H-SiC substrates are demonstrated. Physical vapor deposited SiO2 is used as the gate dielectric. A two-dimensional hexagonal arrangement of carbon atoms with the correct lattice vectors, observed by high-resolution scanning tunneling microscopy, confirms the formation of multiple graphene layers on top of the SiC substrates. The observation of n-type and p-type transition further verifies Dirac Fermions’ unique transport properties in graphene layers. The measured electron and hole mobilities on these fabricated graphene FETs are as high as 5400 and 4400cm2∕Vs, respectively, which are much larger than the corresponding values from conventional SiC or silicon.

Bibliography

Wu, Y. Q., Ye, P. D., Capano, M. A., Xuan, Y., Sui, Y., Qi, M., Cooper, J. A., Shen, T., Pandey, D., Prakash, G., & Reifenberger, R. (2008). Top-gated graphene field-effect-transistors formed by decomposition of SiC. Applied Physics Letters, 92(9).

Authors 11

Y. Q. Wu (first)
P. D. Ye (additional)
M. A. Capano (additional)
Y. Xuan (additional)
Y. Sui (additional)
M. Qi (additional)
J. A. Cooper (additional)
T. Shen (additional)
D. Pandey (additional)
G. Prakash (additional)
R. Reifenberger (additional)

References 24 Referenced 185

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Dates

Type	When
Created	17 years, 5 months ago (March 4, 2008, 9:27 a.m.)
Deposited	2 years, 1 month ago (July 16, 2023, 12:46 a.m.)
Indexed	1 month ago (July 30, 2025, 6:50 a.m.)
Issued	17 years, 6 months ago (March 3, 2008)
Published	17 years, 6 months ago (March 3, 2008)
Published Online	17 years, 6 months ago (March 3, 2008)
Published Print	17 years, 6 months ago (March 3, 2008)

Funders 0

None

BibTeX

@article{Wu_2008, title={Top-gated graphene field-effect-transistors formed by decomposition of SiC}, volume={92}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.2889959}, DOI={10.1063/1.2889959}, number={9}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Wu, Y. Q. and Ye, P. D. and Capano, M. A. and Xuan, Y. and Sui, Y. and Qi, M. and Cooper, J. A. and Shen, T. and Pandey, D. and Prakash, G. and Reifenberger, R.}, year={2008}, month=mar }

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