DOI: 10.1063/1.2883967. Atomic-layer-deposited HfO2 on In0.53Ga0.47As: Passivation and energy-band parameters

Atomic-layer-deposited HfO2 on In0.53Ga0.47As: Passivation and energy-band parameters

10.1063/1.2883967

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Atomic-layer-deposited high κ dielectric HfO2 films on air-exposed In0.53Ga0.47As∕InP (100), using Hf(NCH3C2H5)4 and H2O as the precursors, were found to have an atomically sharp interface free of arsenic oxides, an important aspect for Fermi level unpinning. A careful and thorough probing, using high-resolution angular-resolved x-ray photoelectron spectroscopy (XPS) with synchrotron radiation, however, observed the existence of Ga2O3, In2O3, and In(OH)3 at the interface. The current transport of the metal-oxide-semiconductor capacitor for an oxide 7.8nm thick follows the Fowler–Nordheim tunneling mechanism and shows a low leakage current density of ∼10−8A∕cm2 at VFB+1V. Well behaved frequency-varying capacitance-voltage curves were measured and an interfacial density of states of 2×1012cm−2eV−1 was derived. A conduction-band offset of 1.8±0.1eV and a valence-band offset of 2.9±0.1eV have been determined using the current transport data and XPS, respectively.

Bibliography

Chang, Y. C., Huang, M. L., Lee, K. Y., Lee, Y. J., Lin, T. D., Hong, M., Kwo, J., Lay, T. S., Liao, C. C., & Cheng, K. Y. (2008). Atomic-layer-deposited HfO2 on In0.53Ga0.47As: Passivation and energy-band parameters. Applied Physics Letters, 92(7).

Authors 10

Y. C. Chang (first)
M. L. Huang (additional)
K. Y. Lee (additional)
Y. J. Lee (additional)
T. D. Lin (additional)
M. Hong (additional)
J. Kwo (additional)
T. S. Lay (additional)
C. C. Liao (additional)
K. Y. Cheng (additional)

References 14 Referenced 106

10.1109/LED.2002.802667 / IEEE Electron Device Lett. (2002)
{'key': '2023062118043306200_c2', 'first-page': '422', 'volume': '175–176', 'year': '1997', 'journal-title': 'J. Cryst. Growth'} / J. Cryst. Growth (1997)
10.1109/55.704409 / IEEE Electron Device Lett. (1998)
10.1063/1.1641527 / Appl. Phys. Lett. (2004)
10.1063/1.2146060 / Appl. Phys. Lett. (2005)
10.1063/1.2218826 / Appl. Phys. Lett. (2006)
10.1103/PhysRevB.28.1944 / Phys. Rev. B (1983)
{'key': '2023062118043306200_c8', 'first-page': '2349', 'volume': '53', 'year': '2005', 'journal-title': 'IEEE Trans. Electron Devices'} / IEEE Trans. Electron Devices (2005)
10.1016/S0038-1101(01)00175-7 / Solid-State Electron. (2001)
{'first-page': '139', 'volume-title': 'MOS Physics and Technology', 'year': '1982', 'key': '2023062118043306200_c10'} / MOS Physics and Technology (1982)
10.1063/1.348919 / J. Appl. Phys. (1991)
10.1063/1.121669 / Appl. Phys. Lett. (1998)
10.1063/1.2386946 / J. Appl. Phys. (2006)
10.1143/JJAP.46.3167 / Jpn. J. Appl. Phys., Part 1 (2007)

Dates

Type	When
Created	17 years, 6 months ago (Feb. 19, 2008, 6:11 p.m.)
Deposited	2 years, 2 months ago (June 23, 2023, 8:30 p.m.)
Indexed	1 month ago (July 30, 2025, 6:51 a.m.)
Issued	17 years, 6 months ago (Feb. 18, 2008)
Published	17 years, 6 months ago (Feb. 18, 2008)
Published Online	17 years, 6 months ago (Feb. 19, 2008)
Published Print	17 years, 6 months ago (Feb. 18, 2008)

Funders 0

None

BibTeX

@article{Chang_2008, title={Atomic-layer-deposited HfO2 on In0.53Ga0.47As: Passivation and energy-band parameters}, volume={92}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.2883967}, DOI={10.1063/1.2883967}, number={7}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Chang, Y. C. and Huang, M. L. and Lee, K. Y. and Lee, Y. J. and Lin, T. D. and Hong, M. and Kwo, J. and Lay, T. S. and Liao, C. C. and Cheng, K. Y.}, year={2008}, month=feb }

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