Abstract
Knowledge of the thermal conductivity of phase-change materials is essential for accurate modeling of nonvolatile memory devices that incorporate them. The “3ω method” is a well-established and sensitive technique for measuring this property. We report two new extensions of the 3ω technique that feature in situ monitoring of the phase-change material as it transitions from the as-deposited amorphous phase to the crystalline phase. One technique crystallizes the entire sample in a vacuum oven, while using the 3ω voltage to monitor the phase transition. The other technique uses the 3ω heater to crystallize only the material in the region of measurement.
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Dates
Type | When |
---|---|
Created | 17 years, 6 months ago (Feb. 15, 2008, 6:40 p.m.) |
Deposited | 2 years, 1 month ago (July 5, 2023, 10:24 p.m.) |
Indexed | 3 weeks ago (July 30, 2025, 6:50 a.m.) |
Issued | 17 years, 6 months ago (Feb. 1, 2008) |
Published | 17 years, 6 months ago (Feb. 1, 2008) |
Published Online | 17 years, 6 months ago (Feb. 15, 2008) |
Published Print | 17 years, 6 months ago (Feb. 1, 2008) |
@article{Risk_2008, title={In situ 3ω techniques for measuring thermal conductivity of phase-change materials}, volume={79}, ISSN={1089-7623}, url={http://dx.doi.org/10.1063/1.2841802}, DOI={10.1063/1.2841802}, number={2}, journal={Review of Scientific Instruments}, publisher={AIP Publishing}, author={Risk, W. P. and Rettner, C. T. and Raoux, S.}, year={2008}, month=feb }