Crossref journal-article
AIP Publishing
Applied Physics Letters (317)
Abstract

Using ultrafast optical pump-probe spectroscopy, we have measured carrier relaxation times in epitaxial graphene layers grown on SiC wafers. We find two distinct time scales associated with the relaxation of nonequilibrium photogenerated carriers. An initial fast relaxation transient in the 70–120fs range is followed by a slower relaxation process in the 0.4–1.7ps range. The slower relaxation time is found to be inversely proportional to the degree of crystalline disorder in the graphene layers as measured by Raman spectroscopy. We relate the measured fast and slow time constants to carrier-carrier and carrier-phonon intraband and interband scattering processes in graphene.

Bibliography

Dawlaty, J. M., Shivaraman, S., Chandrashekhar, M., Rana, F., & Spencer, M. G. (2008). Measurement of ultrafast carrier dynamics in epitaxial graphene. Applied Physics Letters, 92(4).

Authors 5
  1. Jahan M. Dawlaty (first)
  2. Shriram Shivaraman (additional)
  3. Mvs Chandrashekhar (additional)
  4. Farhan Rana (additional)
  5. Michael G. Spencer (additional)
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Dates
Type When
Created 17 years, 7 months ago (Jan. 30, 2008, 6:25 p.m.)
Deposited 2 years, 2 months ago (July 2, 2023, 1:45 p.m.)
Indexed 1 week, 4 days ago (Aug. 23, 2025, 1:03 a.m.)
Issued 17 years, 7 months ago (Jan. 28, 2008)
Published 17 years, 7 months ago (Jan. 28, 2008)
Published Online 17 years, 7 months ago (Jan. 30, 2008)
Published Print 17 years, 7 months ago (Jan. 28, 2008)
Funders 0

None

@article{Dawlaty_2008, title={Measurement of ultrafast carrier dynamics in epitaxial graphene}, volume={92}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.2837539}, DOI={10.1063/1.2837539}, number={4}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Dawlaty, Jahan M. and Shivaraman, Shriram and Chandrashekhar, Mvs and Rana, Farhan and Spencer, Michael G.}, year={2008}, month=jan }