Abstract
Using ultrafast optical pump-probe spectroscopy, we have measured carrier relaxation times in epitaxial graphene layers grown on SiC wafers. We find two distinct time scales associated with the relaxation of nonequilibrium photogenerated carriers. An initial fast relaxation transient in the 70–120fs range is followed by a slower relaxation process in the 0.4–1.7ps range. The slower relaxation time is found to be inversely proportional to the degree of crystalline disorder in the graphene layers as measured by Raman spectroscopy. We relate the measured fast and slow time constants to carrier-carrier and carrier-phonon intraband and interband scattering processes in graphene.
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Dates
Type | When |
---|---|
Created | 17 years, 7 months ago (Jan. 30, 2008, 6:25 p.m.) |
Deposited | 2 years, 2 months ago (July 2, 2023, 1:45 p.m.) |
Indexed | 1 week, 4 days ago (Aug. 23, 2025, 1:03 a.m.) |
Issued | 17 years, 7 months ago (Jan. 28, 2008) |
Published | 17 years, 7 months ago (Jan. 28, 2008) |
Published Online | 17 years, 7 months ago (Jan. 30, 2008) |
Published Print | 17 years, 7 months ago (Jan. 28, 2008) |
@article{Dawlaty_2008, title={Measurement of ultrafast carrier dynamics in epitaxial graphene}, volume={92}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.2837539}, DOI={10.1063/1.2837539}, number={4}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Dawlaty, Jahan M. and Shivaraman, Shriram and Chandrashekhar, Mvs and Rana, Farhan and Spencer, Michael G.}, year={2008}, month=jan }