DOI: 10.1063/1.2828338. Atomic-layer-deposited nanostructures for graphene-based nanoelectronics

Atomic-layer-deposited nanostructures for graphene-based nanoelectronics

10.1063/1.2828338

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Graphene is a hexagonally bonded sheet of carbon atoms that exhibits superior transport properties with a velocity of 108cm∕s and a room-temperature mobility of &gt;15000cm2∕Vs. How to grow gate dielectrics on graphene with low defect states is a challenge for graphene-based nanoelectronics. Here, we present the growth behavior of Al2O3 and HfO2 films on highly ordered pyrolytic graphite (HOPG) by atomic layer deposition (ALD). To our surprise, large numbers of Al2O3 and HfO2 nanoribbons, with dimensions of 5–200nm in width and &gt;50μm in length, are observed on HOPG surfaces at growth temperature between 200 and 250°C. This is due to the large numbers of step edges of graphene on HOPG surfaces, which serve as nucleation sites for the ALD process. These Al2O3 and HfO2 nanoribbons can be used as hard masks to generate graphene nanoribbons or as top-gate dielectrics for graphene devices. This methodology could be extended to synthesize insulating, semiconducting, and metallic nanostructures and their combinations.

Bibliography

Xuan, Y., Wu, Y. Q., Shen, T., Qi, M., Capano, M. A., Cooper, J. A., & Ye, P. D. (2008). Atomic-layer-deposited nanostructures for graphene-based nanoelectronics. Applied Physics Letters, 92(1).

Authors 7

Y. Xuan (first)
Y. Q. Wu (additional)
T. Shen (additional)
M. Qi (additional)
M. A. Capano (additional)
J. A. Cooper (additional)
P. D. Ye (additional)

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Dates

Type	When
Created	17 years, 8 months ago (Jan. 2, 2008, 9:10 p.m.)
Deposited	2 years, 1 month ago (Aug. 1, 2023, 6:07 a.m.)
Indexed	4 weeks, 2 days ago (Aug. 6, 2025, 9:51 a.m.)
Issued	17 years, 8 months ago (Jan. 2, 2008)
Published	17 years, 8 months ago (Jan. 2, 2008)
Published Online	17 years, 8 months ago (Jan. 2, 2008)
Published Print	17 years, 7 months ago (Jan. 7, 2008)

Funders 0

None

BibTeX

@article{Xuan_2008, title={Atomic-layer-deposited nanostructures for graphene-based nanoelectronics}, volume={92}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.2828338}, DOI={10.1063/1.2828338}, number={1}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Xuan, Y. and Wu, Y. Q. and Shen, T. and Qi, M. and Capano, M. A. and Cooper, J. A. and Ye, P. D.}, year={2008}, month=jan }

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