DOI: 10.1063/1.2822403. Effect of electrode material on the resistance switching of Cu2O film

Effect of electrode material on the resistance switching of Cu2O film

10.1063/1.2822403

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

The effect of the bottom electrode material on the resistance switching characteristics was evaluated on the structure of Pt∕Cu2O/bottom electrode). It was confirmed that Ohmic or low Schottky contact is needed to induce the effective electric field for resistance switching across the Cu2O film. Pt, TiN, TaN, and strontium-ruthenium oxide belong to this group. For high Schottky contact, the resistance switching characteristics could not be observed due to a large voltage drop at the rectifying interface with insufficient electric field in the Cu2O film. Also, it was confirmed that interlayer formation from the reaction at the electrode-oxide interface increased the barrier height and brought about the switching failure in the case of Ru. The resistance switching properties depend on the barrier height and the reactivity between metal and Cu2O film.

Bibliography

Yang, W.-Y., & Rhee, S.-W. (2007). Effect of electrode material on the resistance switching of Cu2O film. Applied Physics Letters, 91(23).

Authors 2

Woo-Young Yang (first)
Shi-Woo Rhee (additional)

References 10 Referenced 106

10.1063/1.1658711 / J. Appl. Phys. (1970)
10.1063/1.1663317 / J. Appl. Phys. (1974)
10.1063/1.2436720 / Appl. Phys. Lett. (2007)
10.1063/1.2150580 / Appl. Phys. Lett. (2005)
10.1016/j.tsf.2006.03.031 / Thin Solid Films (2006)
10.1109/LED.2007.894652 / IEEE Electron Device Lett. (2007)
10.1103/PhysRevB.60.8138 / Phys. Rev. B (1999)
{'first-page': '159', 'volume-title': 'Semiconductor Devices, Physics and Technology', 'year': '1985', 'key': '2023070217300979400_c8'} / Semiconductor Devices, Physics and Technology (1985)
10.1063/1.90593 / Appl. Phys. Lett. (1979)
10.1006/jcat.1997.1841 / J. Catal. (1997)

Dates

Type	When
Created	17 years, 8 months ago (Dec. 6, 2007, 6:46 p.m.)
Deposited	2 years, 1 month ago (July 2, 2023, 1:30 p.m.)
Indexed	3 weeks, 4 days ago (July 30, 2025, 6:50 a.m.)
Issued	17 years, 8 months ago (Dec. 3, 2007)
Published	17 years, 8 months ago (Dec. 3, 2007)
Published Online	17 years, 8 months ago (Dec. 6, 2007)
Published Print	17 years, 8 months ago (Dec. 3, 2007)

Funders 0

None

BibTeX

@article{Yang_2007, title={Effect of electrode material on the resistance switching of Cu2O film}, volume={91}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.2822403}, DOI={10.1063/1.2822403}, number={23}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Yang, Woo-Young and Rhee, Shi-Woo}, year={2007}, month=dec }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        7,
        30
      ]
    ],
    "date-time": "2025-07-30T10:50:11Z",
    "timestamp": 1753872611888,
    "version": "3.41.2"
  },
  "reference-count": 10,
  "publisher": "AIP Publishing",
  "issue": "23",
  "content-domain": {
    "domain": [
      "pubs.aip.org"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        2007,
        12,
        3
      ]
    ]
  },
  "abstract": "<jats:p>The effect of the bottom electrode material on the resistance switching characteristics was evaluated on the structure of Pt\u2215Cu2O/bottom electrode). It was confirmed that Ohmic or low Schottky contact is needed to induce the effective electric field for resistance switching across the Cu2O film. Pt, TiN, TaN, and strontium-ruthenium oxide belong to this group. For high Schottky contact, the resistance switching characteristics could not be observed due to a large voltage drop at the rectifying interface with insufficient electric field in the Cu2O film. Also, it was confirmed that interlayer formation from the reaction at the electrode-oxide interface increased the barrier height and brought about the switching failure in the case of Ru. The resistance switching properties depend on the barrier height and the reactivity between metal and Cu2O film.</jats:p>",
  "DOI": "10.1063/1.2822403",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2007,
        12,
        6
      ]
    ],
    "date-time": "2007-12-06T23:46:10Z",
    "timestamp": 1196984770000
  },
  "update-policy": "https://doi.org/10.1063/aip-crossmark-policy-page",
  "source": "Crossref",
  "is-referenced-by-count": 106,
  "title": "Effect of electrode material on the resistance switching of Cu2O film",
  "prefix": "10.1063",
  "volume": "91",
  "author": [
    {
      "given": "Woo-Young",
      "family": "Yang",
      "sequence": "first",
      "affiliation": [
        {
          "name": "Pohang University of Science and Technology (POSTECH) Laboratory for Advanced Materials Processing (LAMP), Department of Chemical Engineering, , Pohang, 790-784, Korea"
        }
      ]
    },
    {
      "given": "Shi-Woo",
      "family": "Rhee",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Pohang University of Science and Technology (POSTECH) Laboratory for Advanced Materials Processing (LAMP), Department of Chemical Engineering, , Pohang, 790-784, Korea"
        }
      ]
    }
  ],
  "member": "317",
  "published-online": {
    "date-parts": [
      [
        2007,
        12,
        6
      ]
    ]
  },
  "reference": [
    {
      "key": "2023070217300979400_c1",
      "doi-asserted-by": "publisher",
      "first-page": "551",
      "DOI": "10.1063/1.1658711",
      "volume": "41",
      "year": "1970",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2023070217300979400_c2",
      "doi-asserted-by": "publisher",
      "first-page": "775",
      "DOI": "10.1063/1.1663317",
      "volume": "45",
      "year": "1974",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2023070217300979400_c3",
      "doi-asserted-by": "publisher",
      "first-page": "042107",
      "DOI": "10.1063/1.2436720",
      "volume": "90",
      "year": "2007",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023070217300979400_c4",
      "doi-asserted-by": "publisher",
      "first-page": "263507",
      "DOI": "10.1063/1.2150580",
      "volume": "87",
      "year": "2005",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023070217300979400_c5",
      "doi-asserted-by": "crossref",
      "first-page": "2726",
      "DOI": "10.1016/j.tsf.2006.03.031",
      "volume": "515",
      "year": "2006",
      "journal-title": "Thin Solid Films"
    },
    {
      "key": "2023070217300979400_c6",
      "doi-asserted-by": "publisher",
      "first-page": "366",
      "DOI": "10.1109/LED.2007.894652",
      "volume": "28",
      "year": "2007",
      "journal-title": "IEEE Electron Device Lett."
    },
    {
      "key": "2023070217300979400_c7",
      "doi-asserted-by": "publisher",
      "first-page": "8138",
      "DOI": "10.1103/PhysRevB.60.8138",
      "volume": "60",
      "year": "1999",
      "journal-title": "Phys. Rev. B"
    },
    {
      "first-page": "159",
      "volume-title": "Semiconductor Devices, Physics and Technology",
      "year": "1985",
      "key": "2023070217300979400_c8"
    },
    {
      "key": "2023070217300979400_c9",
      "doi-asserted-by": "publisher",
      "first-page": "47",
      "DOI": "10.1063/1.90593",
      "volume": "34",
      "year": "1979",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023070217300979400_c10",
      "doi-asserted-by": "publisher",
      "first-page": "336",
      "DOI": "10.1006/jcat.1997.1841",
      "volume": "172",
      "year": "1997",
      "journal-title": "J. Catal."
    }
  ],
  "container-title": "Applied Physics Letters",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/1.2822403/14386840/232907_1_online.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/1.2822403/14386840/232907_1_online.pdf",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2023,
        7,
        2
      ]
    ],
    "date-time": "2023-07-02T17:30:18Z",
    "timestamp": 1688319018000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://pubs.aip.org/apl/article/91/23/232907/334961/Effect-of-electrode-material-on-the-resistance"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        2007,
        12,
        3
      ]
    ]
  },
  "references-count": 10,
  "journal-issue": {
    "issue": "23",
    "published-print": {
      "date-parts": [
        [
          2007,
          12,
          3
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1063/1.2822403",
  "relation": {},
  "ISSN": [
    "0003-6951",
    "1077-3118"
  ],
  "subject": [],
  "published-other": {
    "date-parts": [
      [
        2007,
        12,
        3
      ]
    ]
  },
  "published": {
    "date-parts": [
      [
        2007,
        12,
        3
      ]
    ]
  },
  "article-number": "232907"
}