DOI: 10.1063/1.2821845. Evolution of phase change memory characteristics with operating cycles: Electrical characterization and physical modeling

Evolution of phase change memory characteristics with operating cycles: Electrical characterization and physical modeling

10.1063/1.2821845

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

The authors report an improvement in electrical characteristics with operational cycles of phase change memory cells having Ge2Sb2Te5 as the active material. An increase in amorphous-state resistance and threshold voltage and decrease in crystalline-state resistance with cycling are observed, which can be explained by gradual compositional change of the memory material driven by the energy input during programming operations. It is also found that melting of the active volume is critical for such improvement in the electrical characteristics. A physical model is proposed based on an expanding cell active volume with operating cycles to self-consistently explain the reported electrical data.

Bibliography

Sarkar, J., & Gleixner, B. (2007). Evolution of phase change memory characteristics with operating cycles: Electrical characterization and physical modeling. Applied Physics Letters, 91(23).

Authors 2

Joy Sarkar (first)
Bob Gleixner (additional)

References 11 Referenced 41

{'first-page': '12', 'volume-title': 'IEEE 21st Non-Volatile Semiconductor Memory Workshop', 'year': '2006', 'key': '2023070215572033000_c1'} / IEEE 21st Non-Volatile Semiconductor Memory Workshop (2006)
10.1143/JJAP.39.770 / Jpn. J. Appl. Phys., Part 1 (2000)
10.1016/j.sse.2005.10.046 / Solid-State Electron. (2006)
{'key': '2023070215572033000_c4', 'first-page': '122', 'volume': '2006', 'year': '2006', 'journal-title': 'Tech. Dig. VLSI'} / Tech. Dig. VLSI (2006)
{'key': '2023070215572033000_c5', 'first-page': '18', 'volume': '2004', 'year': '2004', 'journal-title': 'Tech. Dig. VLSI'} / Tech. Dig. VLSI (2004)
10.1109/LED.2004.836032 / IEEE Electron Device Lett. (2004)
10.1149/1.2409482 / J. Electrochem. Soc. (2007)
10.1149/1.2164768 / J. Electrochem. Soc. (2006)
10.1109/LED.2004.831219 / IEEE Electron Device Lett. (2004)
{'key': '2023070215572033000_c10', 'first-page': '1', 'volume': '29', 'year': '2004', 'journal-title': 'MRS Bull.'} / MRS Bull. (2004)
10.1063/1.2784169 / Appl. Phys. Lett. (2007)

Dates

Type	When
Created	17 years, 8 months ago (Dec. 6, 2007, 6:46 p.m.)
Deposited	2 years, 1 month ago (July 2, 2023, 11:57 a.m.)
Indexed	3 weeks ago (July 30, 2025, 6:50 a.m.)
Issued	17 years, 8 months ago (Dec. 3, 2007)
Published	17 years, 8 months ago (Dec. 3, 2007)
Published Online	17 years, 8 months ago (Dec. 6, 2007)
Published Print	17 years, 8 months ago (Dec. 3, 2007)

Funders 0

None

BibTeX

@article{Sarkar_2007, title={Evolution of phase change memory characteristics with operating cycles: Electrical characterization and physical modeling}, volume={91}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.2821845}, DOI={10.1063/1.2821845}, number={23}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Sarkar, Joy and Gleixner, Bob}, year={2007}, month=dec }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        7,
        30
      ]
    ],
    "date-time": "2025-07-30T10:50:13Z",
    "timestamp": 1753872613270,
    "version": "3.41.2"
  },
  "reference-count": 11,
  "publisher": "AIP Publishing",
  "issue": "23",
  "content-domain": {
    "domain": [
      "pubs.aip.org"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        2007,
        12,
        3
      ]
    ]
  },
  "abstract": "<jats:p>The authors report an improvement in electrical characteristics with operational cycles of phase change memory cells having Ge2Sb2Te5 as the active material. An increase in amorphous-state resistance and threshold voltage and decrease in crystalline-state resistance with cycling are observed, which can be explained by gradual compositional change of the memory material driven by the energy input during programming operations. It is also found that melting of the active volume is critical for such improvement in the electrical characteristics. A physical model is proposed based on an expanding cell active volume with operating cycles to self-consistently explain the reported electrical data.</jats:p>",
  "DOI": "10.1063/1.2821845",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2007,
        12,
        6
      ]
    ],
    "date-time": "2007-12-06T23:46:10Z",
    "timestamp": 1196984770000
  },
  "update-policy": "https://doi.org/10.1063/aip-crossmark-policy-page",
  "source": "Crossref",
  "is-referenced-by-count": 41,
  "title": "Evolution of phase change memory characteristics with operating cycles: Electrical characterization and physical modeling",
  "prefix": "10.1063",
  "volume": "91",
  "author": [
    {
      "given": "Joy",
      "family": "Sarkar",
      "sequence": "first",
      "affiliation": [
        {
          "name": "Intel Corporation Flash Memory Group, , 2200 Mission College Blvd., Santa Clara, California 95054, USA and Microelectronics Research Center, , Texas 78758, USA"
        },
        {
          "name": "University of Texas at Austin Flash Memory Group, , 2200 Mission College Blvd., Santa Clara, California 95054, USA and Microelectronics Research Center, , Texas 78758, USA"
        }
      ]
    },
    {
      "given": "Bob",
      "family": "Gleixner",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Intel Corporation Flash Memory Group, , 2200 Mission College Blvd., Santa Clara, California 95054, USA"
        }
      ]
    }
  ],
  "member": "317",
  "published-online": {
    "date-parts": [
      [
        2007,
        12,
        6
      ]
    ]
  },
  "reference": [
    {
      "first-page": "12",
      "volume-title": "IEEE 21st Non-Volatile Semiconductor Memory Workshop",
      "year": "2006",
      "key": "2023070215572033000_c1"
    },
    {
      "key": "2023070215572033000_c2",
      "doi-asserted-by": "publisher",
      "first-page": "770",
      "DOI": "10.1143/JJAP.39.770",
      "volume": "39",
      "year": "2000",
      "journal-title": "Jpn. J. Appl. Phys., Part 1"
    },
    {
      "key": "2023070215572033000_c3",
      "doi-asserted-by": "publisher",
      "first-page": "24",
      "DOI": "10.1016/j.sse.2005.10.046",
      "volume": "50",
      "year": "2006",
      "journal-title": "Solid-State Electron."
    },
    {
      "key": "2023070215572033000_c4",
      "first-page": "122",
      "volume": "2006",
      "year": "2006",
      "journal-title": "Tech. Dig. VLSI"
    },
    {
      "key": "2023070215572033000_c5",
      "first-page": "18",
      "volume": "2004",
      "year": "2004",
      "journal-title": "Tech. Dig. VLSI"
    },
    {
      "key": "2023070215572033000_c6",
      "doi-asserted-by": "publisher",
      "first-page": "684",
      "DOI": "10.1109/LED.2004.836032",
      "volume": "25",
      "year": "2004",
      "journal-title": "IEEE Electron Device Lett."
    },
    {
      "key": "2023070215572033000_c7",
      "doi-asserted-by": "publisher",
      "first-page": "H139",
      "DOI": "10.1149/1.2409482",
      "volume": "154",
      "year": "2007",
      "journal-title": "J. Electrochem. Soc."
    },
    {
      "key": "2023070215572033000_c8",
      "doi-asserted-by": "publisher",
      "first-page": "G234",
      "DOI": "10.1149/1.2164768",
      "volume": "153",
      "year": "2006",
      "journal-title": "J. Electrochem. Soc."
    },
    {
      "key": "2023070215572033000_c9",
      "doi-asserted-by": "publisher",
      "first-page": "507",
      "DOI": "10.1109/LED.2004.831219",
      "volume": "25",
      "year": "2004",
      "journal-title": "IEEE Electron Device Lett."
    },
    {
      "key": "2023070215572033000_c10",
      "first-page": "1",
      "volume": "29",
      "year": "2004",
      "journal-title": "MRS Bull."
    },
    {
      "key": "2023070215572033000_c11",
      "doi-asserted-by": "publisher",
      "first-page": "111904",
      "DOI": "10.1063/1.2784169",
      "volume": "91",
      "year": "2007",
      "journal-title": "Appl. Phys. Lett."
    }
  ],
  "container-title": "Applied Physics Letters",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/1.2821845/14387025/233506_1_online.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/1.2821845/14387025/233506_1_online.pdf",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2023,
        7,
        2
      ]
    ],
    "date-time": "2023-07-02T15:57:29Z",
    "timestamp": 1688313449000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://pubs.aip.org/apl/article/91/23/233506/334352/Evolution-of-phase-change-memory-characteristics"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        2007,
        12,
        3
      ]
    ]
  },
  "references-count": 11,
  "journal-issue": {
    "issue": "23",
    "published-print": {
      "date-parts": [
        [
          2007,
          12,
          3
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1063/1.2821845",
  "relation": {},
  "ISSN": [
    "0003-6951",
    "1077-3118"
  ],
  "subject": [],
  "published-other": {
    "date-parts": [
      [
        2007,
        12,
        3
      ]
    ]
  },
  "published": {
    "date-parts": [
      [
        2007,
        12,
        3
      ]
    ]
  },
  "article-number": "233506"
}