DOI: 10.1063/1.2813617. Observation of electric-field induced Ni filament channels in polycrystalline NiOx film

Observation of electric-field induced Ni filament channels in polycrystalline NiOx film

10.1063/1.2813617

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

For high density of resistive random access memory applications using NiOx films, understanding of the filament formation mechanism that occurred during the application of electric fields is required. We show the structural changes of polycrystalline NiOx (x=1–1.5) film in the set (low resistance), reset (high resistance), and switching failed (irreversible low resistance) states investigated by simultaneous high-resolution transmission electron microscopy and electron energy-loss spectroscopy. We have found that the irreversible low resistance state facilitates further increases of Ni filament channels and Ni filament density that resulted from the grain structure changes in the NiOx film.

Bibliography

Park, G.-S., Li, X.-S., Kim, D.-C., Jung, R.-J., Lee, M.-J., & Seo, S. (2007). Observation of electric-field induced Ni filament channels in polycrystalline NiOx film. Applied Physics Letters, 91(22).

Authors 6

Gyeong-Su Park (first)
Xiang-Shu Li (additional)
Dong-Chirl Kim (additional)
Ran-Ju Jung (additional)
Myoung-Jae Lee (additional)
Sunae Seo (additional)

References 23 Referenced 222

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10.1016/0022-3093(70)90145-6 / J. Non-Cryst. Solids (1970)
10.1063/1.1968416 / Appl. Phys. Lett. (2005)
10.1063/1.2001146 / J. Appl. Phys. (2005)
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10.1063/1.2755712 / Appl. Phys. Lett. (2007)
10.1063/1.1831560 / Appl. Phys. Lett. (2004)
10.1002/adma.200601025 / Adv. Mater. (Weinheim, Ger.) (2007)
10.1063/1.2204649 / Appl. Phys. Lett. (2006)
10.1016/0038-1101(64)90131-5 / Solid-State Electron. (1964)
10.1063/1.1754187 / Appl. Phys. Lett. (1965)
{'key': '2023070216041442400_c12', 'first-page': '828', 'volume': '6', 'year': '1969', 'journal-title': 'J. Opt. Soc. Am.'} / J. Opt. Soc. Am. (1969)
{'year': '2006', 'key': '2023070216041442400_c13'} (2006)
10.1063/1.2753101 / Appl. Phys. Lett. (2007)
{'volume-title': 'Phys. Rev. B', 'key': '2023070216041442400_c15', 'article-title': 'Nonpolar Resistance Switching of Metal/Binary-Transition-Metal Oxides/Metal Sandwiches: Homogeneous/Inhomogeneous Transition of Current Distribution'} / Phys. Rev. B / Nonpolar Resistance Switching of Metal/Binary-Transition-Metal Oxides/Metal Sandwiches: Homogeneous/Inhomogeneous Transition of Current Distribution
10.1143/JJAP.45.L991 / Jpn. J. Appl. Phys., Part 1 (2006)
10.1038/366143a0 / Nature (London) (1993)
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10.1093/jmicro/dfh080 / J. Electron Microsc. (2004)
10.1016/0022-3093(70)90097-9 / J. Non-Cryst. Solids (1970)
10.1016/S0040-6090(03)00387-0 / Thin Solid Films (2003)
10.1103/PhysRevB.26.614 / Phys. Rev. B (1982)
10.1038/nmat922 / Nat. Mater. (2003)

Dates

Type	When
Created	17 years, 9 months ago (Nov. 26, 2007, 6:48 p.m.)
Deposited	2 years, 2 months ago (July 2, 2023, 12:04 p.m.)
Indexed	1 week, 4 days ago (Aug. 23, 2025, 1:03 a.m.)
Issued	17 years, 9 months ago (Nov. 26, 2007)
Published	17 years, 9 months ago (Nov. 26, 2007)
Published Online	17 years, 9 months ago (Nov. 26, 2007)
Published Print	17 years, 9 months ago (Nov. 26, 2007)

Funders 0

None

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        8,
        23
      ]
    ],
    "date-time": "2025-08-23T05:03:36Z",
    "timestamp": 1755925416417,
    "version": "3.41.2"
  },
  "reference-count": 23,
  "publisher": "AIP Publishing",
  "issue": "22",
  "content-domain": {
    "domain": [
      "pubs.aip.org"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        2007,
        11,
        26
      ]
    ]
  },
  "abstract": "<jats:p>For high density of resistive random access memory applications using NiOx films, understanding of the filament formation mechanism that occurred during the application of electric fields is required. We show the structural changes of polycrystalline NiOx\u2008(x=1\u20131.5) film in the set (low resistance), reset (high resistance), and switching failed (irreversible low resistance) states investigated by simultaneous high-resolution transmission electron microscopy and electron energy-loss spectroscopy. We have found that the irreversible low resistance state facilitates further increases of Ni filament channels and Ni filament density that resulted from the grain structure changes in the NiOx film.</jats:p>",
  "DOI": "10.1063/1.2813617",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2007,
        11,
        26
      ]
    ],
    "date-time": "2007-11-26T23:48:00Z",
    "timestamp": 1196120880000
  },
  "update-policy": "https://doi.org/10.1063/aip-crossmark-policy-page",
  "source": "Crossref",
  "is-referenced-by-count": 222,
  "title": "Observation of electric-field induced Ni filament channels in polycrystalline NiOx film",
  "prefix": "10.1063",
  "volume": "91",
  "author": [
    {
      "given": "Gyeong-Su",
      "family": "Park",
      "sequence": "first",
      "affiliation": [
        {
          "name": "Samsung Advanced Institute of Technology Analytical Engineering Center, , Suwon 440-600, Korea"
        }
      ]
    },
    {
      "given": "Xiang-Shu",
      "family": "Li",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Samsung Advanced Institute of Technology Analytical Engineering Center, , Suwon 440-600, Korea"
        }
      ]
    },
    {
      "given": "Dong-Chirl",
      "family": "Kim",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Samsung Advanced Institute of Technology Semiconductor Device Laboratory, , Suwon 440-600, Korea"
        }
      ]
    },
    {
      "given": "Ran-Ju",
      "family": "Jung",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Samsung Advanced Institute of Technology Semiconductor Device Laboratory, , Suwon 440-600, Korea"
        }
      ]
    },
    {
      "given": "Myoung-Jae",
      "family": "Lee",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Samsung Advanced Institute of Technology Semiconductor Device Laboratory, , Suwon 440-600, Korea"
        }
      ]
    },
    {
      "given": "Sunae",
      "family": "Seo",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Samsung Advanced Institute of Technology Semiconductor Device Laboratory, , Suwon 440-600, Korea"
        }
      ]
    }
  ],
  "member": "317",
  "published-online": {
    "date-parts": [
      [
        2007,
        11,
        26
      ]
    ]
  },
  "reference": [
    {
      "key": "2023070216041442400_c1",
      "doi-asserted-by": "publisher",
      "first-page": "1129",
      "DOI": "10.1088/0034-4885/33/3/306",
      "volume": "33",
      "year": "1970",
      "journal-title": "Rep. Prog. Phys."
    },
    {
      "key": "2023070216041442400_c2",
      "doi-asserted-by": "publisher",
      "first-page": "284",
      "DOI": "10.1016/0022-3093(70)90145-6",
      "volume": "2",
      "year": "1970",
      "journal-title": "J. Non-Cryst. Solids"
    },
    {
      "key": "2023070216041442400_c3",
      "doi-asserted-by": "publisher",
      "first-page": "262907",
      "DOI": "10.1063/1.1968416",
      "volume": "86",
      "year": "2005",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023070216041442400_c4",
      "doi-asserted-by": "publisher",
      "first-page": "033715",
      "DOI": "10.1063/1.2001146",
      "volume": "98",
      "year": "2005",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2023070216041442400_c5",
      "doi-asserted-by": "publisher",
      "first-page": "2749",
      "DOI": "10.1063/1.126464",
      "volume": "76",
      "year": "2000",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023070216041442400_c6",
      "doi-asserted-by": "publisher",
      "first-page": "022112",
      "DOI": "10.1063/1.2755712",
      "volume": "91",
      "year": "2007",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023070216041442400_c7",
      "doi-asserted-by": "publisher",
      "first-page": "5655",
      "DOI": "10.1063/1.1831560",
      "volume": "85",
      "year": "2004",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023070216041442400_c8",
      "doi-asserted-by": "publisher",
      "first-page": "73",
      "DOI": "10.1002/adma.200601025",
      "volume": "19",
      "year": "2007",
      "journal-title": "Adv. Mater. (Weinheim, Ger.)"
    },
    {
      "key": "2023070216041442400_c9",
      "doi-asserted-by": "publisher",
      "first-page": "202102",
      "DOI": "10.1063/1.2204649",
      "volume": "88",
      "year": "2006",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023070216041442400_c10",
      "doi-asserted-by": "publisher",
      "first-page": "785",
      "DOI": "10.1016/0038-1101(64)90131-5",
      "volume": "7",
      "year": "1964",
      "journal-title": "Solid-State Electron."
    },
    {
      "key": "2023070216041442400_c11",
      "doi-asserted-by": "publisher",
      "first-page": "106",
      "DOI": "10.1063/1.1754187",
      "volume": "6",
      "year": "1965",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023070216041442400_c12",
      "first-page": "828",
      "volume": "6",
      "year": "1969",
      "journal-title": "J. Opt. Soc. Am."
    },
    {
      "year": "2006",
      "key": "2023070216041442400_c13"
    },
    {
      "key": "2023070216041442400_c14",
      "doi-asserted-by": "publisher",
      "first-page": "012901",
      "DOI": "10.1063/1.2753101",
      "volume": "91",
      "year": "2007",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "volume-title": "Phys. Rev. B",
      "key": "2023070216041442400_c15",
      "article-title": "Nonpolar Resistance Switching of Metal/Binary-Transition-Metal Oxides/Metal Sandwiches: Homogeneous/Inhomogeneous Transition of Current Distribution"
    },
    {
      "key": "2023070216041442400_c16",
      "doi-asserted-by": "crossref",
      "first-page": "L991",
      "DOI": "10.1143/JJAP.45.L991",
      "volume": "45",
      "year": "2006",
      "journal-title": "Jpn. J. Appl. Phys., Part 1"
    },
    {
      "key": "2023070216041442400_c17",
      "doi-asserted-by": "publisher",
      "first-page": "143",
      "DOI": "10.1038/366143a0",
      "volume": "366",
      "year": "1993",
      "journal-title": "Nature (London)"
    },
    {
      "key": "2023070216041442400_c18",
      "doi-asserted-by": "publisher",
      "first-page": "727",
      "DOI": "10.1038/366727a0",
      "volume": "366",
      "year": "1993",
      "journal-title": "Nature (London)"
    },
    {
      "key": "2023070216041442400_c19",
      "doi-asserted-by": "crossref",
      "first-page": "451",
      "DOI": "10.1093/jmicro/dfh080",
      "volume": "53",
      "year": "2004",
      "journal-title": "J. Electron Microsc."
    },
    {
      "key": "2023070216041442400_c20",
      "doi-asserted-by": "publisher",
      "first-page": "593",
      "DOI": "10.1016/0022-3093(70)90097-9",
      "volume": "4",
      "year": "1970",
      "journal-title": "J. Non-Cryst. Solids"
    },
    {
      "key": "2023070216041442400_c21",
      "doi-asserted-by": "publisher",
      "first-page": "321",
      "DOI": "10.1016/S0040-6090(03)00387-0",
      "volume": "433",
      "year": "2003",
      "journal-title": "Thin Solid Films"
    },
    {
      "key": "2023070216041442400_c22",
      "doi-asserted-by": "publisher",
      "first-page": "614",
      "DOI": "10.1103/PhysRevB.26.614",
      "volume": "26",
      "year": "1982",
      "journal-title": "Phys. Rev. B"
    },
    {
      "key": "2023070216041442400_c23",
      "doi-asserted-by": "publisher",
      "first-page": "464",
      "DOI": "10.1038/nmat922",
      "volume": "2",
      "year": "2003",
      "journal-title": "Nat. Mater."
    }
  ],
  "container-title": "Applied Physics Letters",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/1.2813617/13189177/222103_1_online.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/1.2813617/13189177/222103_1_online.pdf",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2023,
        7,
        2
      ]
    ],
    "date-time": "2023-07-02T16:04:19Z",
    "timestamp": 1688313859000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://pubs.aip.org/apl/article/91/22/222103/334512/Observation-of-electric-field-induced-Ni-filament"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        2007,
        11,
        26
      ]
    ]
  },
  "references-count": 23,
  "journal-issue": {
    "issue": "22",
    "published-print": {
      "date-parts": [
        [
          2007,
          11,
          26
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1063/1.2813617",
  "relation": {},
  "ISSN": [
    "0003-6951",
    "1077-3118"
  ],
  "subject": [],
  "published-other": {
    "date-parts": [
      [
        2007,
        11,
        26
      ]
    ]
  },
  "published": {
    "date-parts": [
      [
        2007,
        11,
        26
      ]
    ]
  },
  "article-number": "222103"
}