DOI: 10.1063/1.2795086. Beryllium compensation doping of InAs∕GaSb infrared superlattice photodiodes

Beryllium compensation doping of InAs∕GaSb infrared superlattice photodiodes

10.1063/1.2795086

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Capacitance-voltage measurements in conjunction with dark current measurements on InAs∕GaSb long wavelength infrared superlattice photodiodes grown by molecular-beam epitaxy on GaSb substrates are reported. By varying the beryllium concentration in the InAs layer of the active region, the residually n-type superlattice is compensated to become slightly p type. By adjusting the doping, the dominant dark current mechanism can be varied from diffusion to Zener tunneling. Minimization of the dark current leads to an increase of the zero-bias differential resistance from less than 4to32Ωcm2 for a 100% cutoff of 12.05μm

Bibliography

Hoffman, D., Nguyen, B.-M., Delaunay, P.-Y., Hood, A., Razeghi, M., & Pellegrino, J. (2007). Beryllium compensation doping of InAsâGaSb infrared superlattice photodiodes. Applied Physics Letters, 91(14).

Authors 6

Darin Hoffman (first)
Binh-Minh Nguyen (additional)
Pierre-Yves Delaunay (additional)
Andrew Hood (additional)
Manijeh Razeghi (additional)
Joe Pellegrino (additional)

References 11 Referenced 41

10.1103/PhysRevB.69.085316 / Phys. Rev. B (2004)
10.1063/1.1308528 / Appl. Phys. Lett. (2000)
10.1116/1.1829059 / J. Vac. Sci. Technol. B (2005)
10.1016/j.jcrysgro.2004.09.088 / J. Cryst. Growth (2005)
10.1063/1.2172399 / Appl. Phys. Lett. (2006)
10.1063/1.2345020 / Appl. Phys. Lett. (2006)
10.1063/1.2746943 / Appl. Phys. Lett. (2007)
10.1063/1.2170947 / J. Appl. Phys. (2006)
10.1063/1.1310167 / Appl. Phys. Lett. (2000)
10.1116/1.586256 / J. Vac. Sci. Technol. B (1992)
10.1063/1.1686894 / Appl. Phys. Lett. (2004)

Dates

Type	When
Created	17 years, 10 months ago (Oct. 2, 2007, 6:10 p.m.)
Deposited	2 years ago (July 31, 2023, 9:46 p.m.)
Indexed	3 weeks, 1 day ago (July 30, 2025, 6:50 a.m.)
Issued	17 years, 10 months ago (Oct. 1, 2007)
Published	17 years, 10 months ago (Oct. 1, 2007)
Published Online	17 years, 10 months ago (Oct. 2, 2007)
Published Print	17 years, 10 months ago (Oct. 1, 2007)

Funders 0

None

BibTeX

@article{Hoffman_2007, title={Beryllium compensation doping of InAs∕GaSb infrared superlattice photodiodes}, volume={91}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.2795086}, DOI={10.1063/1.2795086}, number={14}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Hoffman, Darin and Nguyen, Binh-Minh and Delaunay, Pierre-Yves and Hood, Andrew and Razeghi, Manijeh and Pellegrino, Joe}, year={2007}, month=oct }

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