Abstract
Using a hydrothermal synthesis approach, large scale and laterally bridged nanowires have been grown across trenched Au∕Si, Au∕SiO2∕Si, and ZnO∕Si electrodes. This technique shows a low temperature (80°C) approach for growing ZnO nanowires on a prepatterned substrate, showing its potential for integrating with silicon based technology. The I-V characteristics of the nanowires have been measured and their nonlinear behavior has been analyzed. It is suggested that the nonlinear behavior might be due to the dominant phonon scattering and the impurity involved grain boundaries in the multinanowire bridges. The bridged nanowire arrays could be useful for fabricating gas, chemical, or biochemical nanosensor arrays.
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Dates
Type | When |
---|---|
Created | 17 years, 10 months ago (Oct. 5, 2007, 6:19 p.m.) |
Deposited | 2 years ago (July 31, 2023, 11:27 p.m.) |
Indexed | 4 weeks, 1 day ago (July 30, 2025, 6:50 a.m.) |
Issued | 17 years, 10 months ago (Oct. 1, 2007) |
Published | 17 years, 10 months ago (Oct. 1, 2007) |
Published Online | 17 years, 10 months ago (Oct. 3, 2007) |
Published Print | 17 years, 10 months ago (Oct. 1, 2007) |
@article{Gao_2007, title={Bridged ZnO nanowires across trenched electrodes}, volume={91}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.2794417}, DOI={10.1063/1.2794417}, number={14}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Gao, Pu-Xian and Liu, Jin and Buchine, Brent A. and Weintraub, Benjamin and Wang, Z. L. and Lee, J. L.}, year={2007}, month=oct }