Crossref journal-article
AIP Publishing
Applied Physics Letters (317)
Abstract

Micromagnetic simulations reveal how transverse domain walls couple with triangular diodes in magnetic nanowires. For symmetric diodes, the coupling explains the observed differences in the magnetic field required to depin domain walls traveling in opposite directions. In asymmetric diodes, the wall-triangle interaction can lead to order-of-magnitude differences in the depinning fields of oppositely magnetized walls traveling in the same direction. The asymmetric structures therefore combine the diode function of the symmetric structures with domain wall chirality filtering. We also show how two back-to-back diodes may be used to trap a domain wall and form a memory element.

Bibliography

Bryan, M. T., Schrefl, T., & Allwood, D. A. (2007). Symmetric and asymmetric domain wall diodes in magnetic nanowires. Applied Physics Letters, 91(14).

Authors 3
  1. M. T. Bryan (first)
  2. T. Schrefl (additional)
  3. D. A. Allwood (additional)
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Dates
Type When
Created 17 years, 10 months ago (Oct. 1, 2007, 5:23 p.m.)
Deposited 2 years ago (July 31, 2023, 11:24 p.m.)
Indexed 3 weeks, 5 days ago (July 30, 2025, 6:50 a.m.)
Issued 17 years, 10 months ago (Oct. 1, 2007)
Published 17 years, 10 months ago (Oct. 1, 2007)
Published Online 17 years, 10 months ago (Oct. 1, 2007)
Published Print 17 years, 10 months ago (Oct. 1, 2007)
Funders 0

None

@article{Bryan_2007, title={Symmetric and asymmetric domain wall diodes in magnetic nanowires}, volume={91}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.2794030}, DOI={10.1063/1.2794030}, number={14}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Bryan, M. T. and Schrefl, T. and Allwood, D. A.}, year={2007}, month=oct }