DOI: 10.1063/1.2790787. Characteristic trapping lifetime and capacitance-voltage measurements of GaAs metal-oxide-semiconductor structures

Characteristic trapping lifetime and capacitance-voltage measurements of GaAs metal-oxide-semiconductor structures

10.1063/1.2790787

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

The authors show the implications that the free carrier trapping lifetime has on the capacitance-voltage (CV) characterization method applied to metal-oxide-semiconductor (MOS) structures. It is shown that, whereas the CV characterization method for deducing interface state densities works well for Si, the generally used frequency range of 100Hz–1MHz is much less adapted to GaAs MOS structures. Only interface trapping states in very small portions of the GaAs bandgap are measured with this frequency range, and mainly the very important midgap region is not properly probed. Performing an additional measurement at 150°C on GaAs MOS structures eliminates this problem.

Bibliography

Brammertz, G., Martens, K., Sioncke, S., Delabie, A., Caymax, M., Meuris, M., & Heyns, M. (2007). Characteristic trapping lifetime and capacitance-voltage measurements of GaAs metal-oxide-semiconductor structures. Applied Physics Letters, 91(13).

Authors 7

Guy Brammertz (first)
Koen Martens (additional)
Sonja Sioncke (additional)
Annelies Delabie (additional)
Matty Caymax (additional)
Marc Meuris (additional)
Marc Heyns (additional)

References 6 Referenced 95

10.1109/TNANO.2004.842073 / IEEE Trans. Nanotechnol. (2005)
{'volume-title': 'MOS (Metal Oxide Semiconductor) Physics and Technology', 'year': '1982', 'key': '2023070216053446800_c2'} / MOS (Metal Oxide Semiconductor) Physics and Technology (1982)
10.1007/1-4020-3078-9 / Materials Fundamentals of Gate Dielectrics by Demkov (2005)
10.1103/PhysRev.87.835 / Phys. Rev. (1953)
{'key': '2023070216053446800_c5'}
10.1109/LED.2006.873767 / IEEE Electron Device Lett. (2006)

Dates

Type	When
Created	17 years, 11 months ago (Sept. 27, 2007, 6:29 p.m.)
Deposited	2 years, 2 months ago (July 2, 2023, 12:05 p.m.)
Indexed	2 weeks ago (Aug. 21, 2025, 1:43 p.m.)
Issued	17 years, 11 months ago (Sept. 24, 2007)
Published	17 years, 11 months ago (Sept. 24, 2007)
Published Online	17 years, 11 months ago (Sept. 27, 2007)
Published Print	17 years, 11 months ago (Sept. 24, 2007)

Funders 0

None

BibTeX

@article{Brammertz_2007, title={Characteristic trapping lifetime and capacitance-voltage measurements of GaAs metal-oxide-semiconductor structures}, volume={91}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.2790787}, DOI={10.1063/1.2790787}, number={13}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Brammertz, Guy and Martens, Koen and Sioncke, Sonja and Delabie, Annelies and Caymax, Matty and Meuris, Marc and Heyns, Marc}, year={2007}, month=sep }

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