DOI: 10.1063/1.2787162. Quantum modeling of thermoelectric performance of strained Si∕Ge∕Si superlattices using the nonequilibrium Green’s function method

Quantum modeling of thermoelectric performance of strained Si∕Ge∕Si superlattices using the nonequilibrium Green’s function method

10.1063/1.2787162

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

The cross-plane thermoelectric performance of strained Si∕Ge∕Si superlattices is studied from a quantum point of view using the nonequilibrium Green’s function method. Strain causes the germanium well layers to turn into barriers that promote electron tunneling through the barriers. Electron tunneling produces oscillations in the Seebeck coefficient due to shift in subband energies near the Fermi level. Strain-induced energy splitting can increase the power factor by up to four orders of magnitude in germanium-rich substrates. Also, at large doping, strain lowers the subband energies such that thermoelectric performance is independent of layer thickness between 2 and 4nm germanium barrier layers. The results imply that larger barrier layers can be used at high doping without a performance penalty while avoiding problems with interlayer diffusion that are prevalent in films with small thicknesses.

Bibliography

Bulusu, A., & Walker, D. G. (2007). Quantum modeling of thermoelectric performance of strained SiâGeâSi superlattices using the nonequilibrium Greenâs function method. Journal of Applied Physics, 102(7).

Authors 2

A. Bulusu (first)
D. G. Walker (additional)

References 24 Referenced 20

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Dates

Type	When
Created	17 years, 10 months ago (Oct. 11, 2007, 6:43 p.m.)
Deposited	2 years, 1 month ago (Aug. 5, 2023, 12:15 a.m.)
Indexed	1 month, 1 week ago (July 30, 2025, 6:49 a.m.)
Issued	17 years, 11 months ago (Oct. 1, 2007)
Published	17 years, 11 months ago (Oct. 1, 2007)
Published Online	17 years, 10 months ago (Oct. 11, 2007)
Published Print	17 years, 11 months ago (Oct. 1, 2007)

Funders 0

None

BibTeX

@article{Bulusu_2007, title={Quantum modeling of thermoelectric performance of strained Si∕Ge∕Si superlattices using the nonequilibrium Green’s function method}, volume={102}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.2787162}, DOI={10.1063/1.2787162}, number={7}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Bulusu, A. and Walker, D. G.}, year={2007}, month=oct }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        7,
        30
      ]
    ],
    "date-time": "2025-07-30T10:49:40Z",
    "timestamp": 1753872580205,
    "version": "3.41.2"
  },
  "reference-count": 24,
  "publisher": "AIP Publishing",
  "issue": "7",
  "content-domain": {
    "domain": [
      "pubs.aip.org"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        2007,
        10,
        1
      ]
    ]
  },
  "abstract": "<jats:p>The cross-plane thermoelectric performance of strained Si\u2215Ge\u2215Si superlattices is studied from a quantum point of view using the nonequilibrium Green\u2019s function method. Strain causes the germanium well layers to turn into barriers that promote electron tunneling through the barriers. Electron tunneling produces oscillations in the Seebeck coefficient due to shift in subband energies near the Fermi level. Strain-induced energy splitting can increase the power factor by up to four orders of magnitude in germanium-rich substrates. Also, at large doping, strain lowers the subband energies such that thermoelectric performance is independent of layer thickness between 2 and 4nm germanium barrier layers. The results imply that larger barrier layers can be used at high doping without a performance penalty while avoiding problems with interlayer diffusion that are prevalent in films with small thicknesses.</jats:p>",
  "DOI": "10.1063/1.2787162",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2007,
        10,
        11
      ]
    ],
    "date-time": "2007-10-11T22:43:20Z",
    "timestamp": 1192142600000
  },
  "update-policy": "https://doi.org/10.1063/aip-crossmark-policy-page",
  "source": "Crossref",
  "is-referenced-by-count": 20,
  "title": "Quantum modeling of thermoelectric performance of strained Si\u2215Ge\u2215Si superlattices using the nonequilibrium Green\u2019s function method",
  "prefix": "10.1063",
  "volume": "102",
  "author": [
    {
      "given": "A.",
      "family": "Bulusu",
      "sequence": "first",
      "affiliation": [
        {
          "name": "Vanderbilt University Interdisciplinary Materials Science, , Nashville, Tennessee 37235, USA"
        }
      ]
    },
    {
      "given": "D. G.",
      "family": "Walker",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Vanderbilt University Department of Mechanical Engineering, , Nashville, Tennessee 37235, USA"
        }
      ]
    }
  ],
  "member": "317",
  "published-online": {
    "date-parts": [
      [
        2007,
        10,
        11
      ]
    ]
  },
  "reference": [
    {
      "volume": "1994",
      "journal-title": "Tech. Dig. - Int. Electron Devices Meet.",
      "first-page": "373",
      "key": "2023080504145347800_c1"
    },
    {
      "volume": "1995",
      "journal-title": "Tech. Dig. - Int. Electron Devices Meet.",
      "first-page": "517",
      "key": "2023080504145347800_c2"
    },
    {
      "volume": "1998",
      "journal-title": "Tech. Dig. - Int. Electron Devices Meet.",
      "first-page": "707",
      "key": "2023080504145347800_c3"
    },
    {
      "volume": "2002",
      "journal-title": "Tech. Dig. - Int. Electron Devices Meet.",
      "first-page": "23",
      "key": "2023080504145347800_c4"
    },
    {
      "volume-title": "Recent Trends in Thermoelectric Materials Research III",
      "year": "2001",
      "author": "Tritt",
      "key": "2023080504145347800_c5"
    },
    {
      "key": "2023080504145347800_c6",
      "doi-asserted-by": "publisher",
      "first-page": "1567",
      "DOI": "10.1063/1.362953",
      "volume": "80",
      "year": "1996",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2023080504145347800_c7",
      "doi-asserted-by": "publisher",
      "first-page": "1544",
      "DOI": "10.1103/PhysRevB.58.1544",
      "volume": "58",
      "year": "1998",
      "journal-title": "Phys. Rev. B"
    },
    {
      "key": "2023080504145347800_c8",
      "doi-asserted-by": "publisher",
      "first-page": "6149",
      "DOI": "10.1063/1.368928",
      "volume": "84",
      "year": "1998",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2023080504145347800_c9",
      "doi-asserted-by": "publisher",
      "first-page": "3230",
      "DOI": "10.1063/1.110207",
      "volume": "63",
      "year": "1993",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023080504145347800_c10",
      "doi-asserted-by": "publisher",
      "first-page": "12",
      "DOI": "10.1103/PhysRevB.47.12727",
      "volume": "47",
      "year": "1993",
      "journal-title": "Phys. Rev. B"
    },
    {
      "key": "2023080504145347800_c11",
      "doi-asserted-by": "publisher",
      "first-page": "5460",
      "DOI": "10.1063/1.359661",
      "volume": "78",
      "year": "1995",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2023080504145347800_c12",
      "doi-asserted-by": "publisher",
      "first-page": "3588",
      "DOI": "10.1063/1.1515876",
      "volume": "81",
      "year": "2002",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023080504145347800_c13",
      "doi-asserted-by": "publisher",
      "first-page": "1233",
      "DOI": "10.1063/1.1635992",
      "volume": "95",
      "year": "2004",
      "journal-title": "J. Appl. Phys."
    },
    {
      "volume-title": "Quantum Transport: Atom to Transistor",
      "year": "2005",
      "key": "2023080504145347800_c14"
    },
    {
      "key": "2023080504145347800_c15",
      "doi-asserted-by": "publisher",
      "first-page": "492",
      "DOI": "10.1115/1.2709962",
      "volume": "129",
      "year": "2007",
      "journal-title": "J. Heat Transfer"
    },
    {
      "volume-title": "IEEE Trans. Electron Devices",
      "key": "2023080504145347800_c16",
      "article-title": "Quantum modeling of thermoelectric properties of Si/Ge/Si superlattices"
    },
    {
      "key": "2023080504145347800_c17",
      "doi-asserted-by": "publisher",
      "first-page": "1871",
      "DOI": "10.1103/PhysRevB.39.1871",
      "volume": "39",
      "year": "1989",
      "journal-title": "Phys. Rev. B"
    },
    {
      "volume-title": "Device Electronics for Integrated Circuits",
      "year": "1986",
      "key": "2023080504145347800_c18"
    },
    {
      "first-page": "71",
      "volume-title": "2001 Materials Research Society Symposium Proceedings",
      "year": "2001",
      "key": "2023080504145347800_c19"
    },
    {
      "key": "2023080504145347800_c20",
      "doi-asserted-by": "publisher",
      "first-page": "1758",
      "DOI": "10.1063/1.1458693",
      "volume": "80",
      "year": "2002",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "first-page": "340",
      "volume-title": "Proceedings of the 20th International Conference on Thermoelectrics (ICT)",
      "year": "2001",
      "key": "2023080504145347800_c21"
    },
    {
      "key": "2023080504145347800_c22",
      "doi-asserted-by": "publisher",
      "first-page": "1490",
      "DOI": "10.1063/1.1308271",
      "volume": "77",
      "year": "2000",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023080504145347800_c23",
      "doi-asserted-by": "publisher",
      "first-page": "195315",
      "DOI": "10.1103/PhysRevB.74.195315",
      "volume": "74",
      "year": "2006",
      "journal-title": "Phys. Rev. B"
    },
    {
      "year": "1997",
      "key": "2023080504145347800_c24"
    }
  ],
  "container-title": "Journal of Applied Physics",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://pubs.aip.org/aip/jap/article-pdf/doi/10.1063/1.2787162/14995529/073713_1_online.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://pubs.aip.org/aip/jap/article-pdf/doi/10.1063/1.2787162/14995529/073713_1_online.pdf",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2023,
        8,
        5
      ]
    ],
    "date-time": "2023-08-05T04:15:02Z",
    "timestamp": 1691208902000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://pubs.aip.org/jap/article/102/7/073713/987902/Quantum-modeling-of-thermoelectric-performance-of"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        2007,
        10,
        1
      ]
    ]
  },
  "references-count": 24,
  "journal-issue": {
    "issue": "7",
    "published-print": {
      "date-parts": [
        [
          2007,
          10,
          1
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1063/1.2787162",
  "relation": {},
  "ISSN": [
    "0021-8979",
    "1089-7550"
  ],
  "subject": [],
  "published-other": {
    "date-parts": [
      [
        2007,
        10,
        1
      ]
    ]
  },
  "published": {
    "date-parts": [
      [
        2007,
        10,
        1
      ]
    ]
  },
  "article-number": "073713"
}