DOI: 10.1063/1.2784169. Thickness and stoichiometry dependence of the thermal conductivity of GeSbTe films

Thickness and stoichiometry dependence of the thermal conductivity of GeSbTe films

10.1063/1.2784169

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Thermal conduction in GeSbTe films strongly influences the writing energy and time for phase change memory (PCM) technology. This study measures the thermal conductivity of Ge2Sb2Te5 between 25 and 340°C for layers with thicknesses near 60, 120, and 350nm. A strong thickness dependence of the thermal conductivity is attributed to a combination of thermal boundary resistance (TBR) and microstructural imperfections. Stoichiometric variations significantly alter the phase transition temperatures but do not strongly impact the thermal conductivity at a given temperature. This work makes progress on extracting the TBR for Ge2Sb2Te5 films, which is a critical unknown parameter for PCM simulations.

Bibliography

Reifenberg, J. P., Panzer, M. A., Kim, S., Gibby, A. M., Zhang, Y., Wong, S., Wong, H.-S. P., Pop, E., & Goodson, K. E. (2007). Thickness and stoichiometry dependence of the thermal conductivity of GeSbTe films. Applied Physics Letters, 91(11).

Authors 9

John P. Reifenberg (first)
Matthew A. Panzer (additional)
SangBum Kim (additional)
Aaron M. Gibby (additional)
Yuan Zhang (additional)
Simon Wong (additional)
H.-S. Philip Wong (additional)
Eric Pop (additional)
Kenneth E. Goodson (additional)

References 20 Referenced 114

{'year': '2003', 'key': '2023070216410137700_c1', 'first-page': '10'} (2003)
10.1038/nmat1359 / Nat. Mater. (2005)
10.1063/1.366220 / J. Appl. Phys. (1997)
10.1038/nmat1807 / Nat. Mater. (2007)
{'year': '2006', 'key': '2023070216410137700_c5', 'first-page': '1306'} (2006)
10.1063/1.1661506 / J. Appl. Phys. (1972)
10.1063/1.107440 / Appl. Phys. Lett. (1991)
10.1103/PhysRevB.37.1085 / Phys. Rev. B (1988)
10.1063/1.348620 / J. Appl. Phys. (1991)
10.1063/1.371606 / J. Appl. Phys. (1999)
10.1063/1.126852 / Appl. Phys. Lett. (2000)
10.1063/1.1944910 / J. Appl. Phys. (2005)
10.1364/AO.39.002347 / Appl. Opt. (2000)
10.1063/1.2359354 / Appl. Phys. Lett. (2006)
10.1063/1.1524305 / J. Appl. Phys. (2003)
10.1103/RevModPhys.61.605 / Rev. Mod. Phys. (1989)
10.1063/1.118755 / Appl. Phys. Lett. (1997)
10.1016/S0022-3093(01)01034-1 / J. Non-Cryst. Solids (2002)
{'year': '2001', 'key': '2023070216410137700_c19'} (2001)
{'volume-title': 'Electronic Processes in Non-Crystalline Materials', 'year': '1967', 'key': '2023070216410137700_c20'} / Electronic Processes in Non-Crystalline Materials (1967)

Dates

Type	When
Created	17 years, 11 months ago (Sept. 11, 2007, 6:05 p.m.)
Deposited	2 years, 1 month ago (July 2, 2023, 12:41 p.m.)
Indexed	3 weeks, 1 day ago (July 30, 2025, 6:50 a.m.)
Issued	17 years, 11 months ago (Sept. 10, 2007)
Published	17 years, 11 months ago (Sept. 10, 2007)
Published Online	17 years, 11 months ago (Sept. 11, 2007)
Published Print	17 years, 11 months ago (Sept. 10, 2007)

Funders 0

None

BibTeX

@article{Reifenberg_2007, title={Thickness and stoichiometry dependence of the thermal conductivity of GeSbTe films}, volume={91}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.2784169}, DOI={10.1063/1.2784169}, number={11}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Reifenberg, John P. and Panzer, Matthew A. and Kim, SangBum and Gibby, Aaron M. and Zhang, Yuan and Wong, Simon and Wong, H.-S. Philip and Pop, Eric and Goodson, Kenneth E.}, year={2007}, month=sep }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        7,
        30
      ]
    ],
    "date-time": "2025-07-30T10:50:01Z",
    "timestamp": 1753872601608,
    "version": "3.41.2"
  },
  "reference-count": 20,
  "publisher": "AIP Publishing",
  "issue": "11",
  "content-domain": {
    "domain": [
      "pubs.aip.org"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        2007,
        9,
        10
      ]
    ]
  },
  "abstract": "<jats:p>Thermal conduction in GeSbTe films strongly influences the writing energy and time for phase change memory (PCM) technology. This study measures the thermal conductivity of Ge2Sb2Te5 between 25 and 340\u00b0C for layers with thicknesses near 60, 120, and 350nm. A strong thickness dependence of the thermal conductivity is attributed to a combination of thermal boundary resistance (TBR) and microstructural imperfections. Stoichiometric variations significantly alter the phase transition temperatures but do not strongly impact the thermal conductivity at a given temperature. This work makes progress on extracting the TBR for Ge2Sb2Te5 films, which is a critical unknown parameter for PCM simulations.</jats:p>",
  "DOI": "10.1063/1.2784169",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2007,
        9,
        11
      ]
    ],
    "date-time": "2007-09-11T22:05:42Z",
    "timestamp": 1189548342000
  },
  "update-policy": "https://doi.org/10.1063/aip-crossmark-policy-page",
  "source": "Crossref",
  "is-referenced-by-count": 114,
  "title": "Thickness and stoichiometry dependence of the thermal conductivity of GeSbTe films",
  "prefix": "10.1063",
  "volume": "91",
  "author": [
    {
      "given": "John P.",
      "family": "Reifenberg",
      "sequence": "first",
      "affiliation": [
        {
          "name": "Stanford University Department of Mechanical Engineering, , Stanford, California 94305"
        }
      ]
    },
    {
      "given": "Matthew A.",
      "family": "Panzer",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Stanford University Department of Mechanical Engineering, , Stanford, California 94305"
        }
      ]
    },
    {
      "given": "SangBum",
      "family": "Kim",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Stanford University Department of Electrical Engineering, , Stanford, California 94305"
        }
      ]
    },
    {
      "given": "Aaron M.",
      "family": "Gibby",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Stanford University Department of Electrical Engineering, , Stanford, California 94305"
        }
      ]
    },
    {
      "given": "Yuan",
      "family": "Zhang",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Stanford University Department of Electrical Engineering, , Stanford, California 94305"
        }
      ]
    },
    {
      "given": "Simon",
      "family": "Wong",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Stanford University Department of Electrical Engineering, , Stanford, California 94305"
        }
      ]
    },
    {
      "given": "H.-S. Philip",
      "family": "Wong",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Stanford University Department of Electrical Engineering, , Stanford, California 94305"
        }
      ]
    },
    {
      "given": "Eric",
      "family": "Pop",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "University of Illinois Department of Electrical and Computer Engineering, , Urbana, Illinois 61801"
        }
      ]
    },
    {
      "given": "Kenneth E.",
      "family": "Goodson",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Stanford University Microscale Heat Transfer Laboratory, Department of Mechanical Engineering, , Stanford, California 94305"
        }
      ]
    }
  ],
  "member": "317",
  "published-online": {
    "date-parts": [
      [
        2007,
        9,
        11
      ]
    ]
  },
  "reference": [
    {
      "year": "2003",
      "key": "2023070216410137700_c1",
      "first-page": "10"
    },
    {
      "key": "2023070216410137700_c2",
      "doi-asserted-by": "crossref",
      "first-page": "265",
      "DOI": "10.1038/nmat1359",
      "volume": "4",
      "year": "2005",
      "journal-title": "Nat. Mater."
    },
    {
      "key": "2023070216410137700_c3",
      "doi-asserted-by": "publisher",
      "first-page": "4183",
      "DOI": "10.1063/1.366220",
      "volume": "82",
      "year": "1997",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2023070216410137700_c4",
      "doi-asserted-by": "publisher",
      "first-page": "122",
      "DOI": "10.1038/nmat1807",
      "volume": "6",
      "year": "2007",
      "journal-title": "Nat. Mater."
    },
    {
      "year": "2006",
      "key": "2023070216410137700_c5",
      "first-page": "1306"
    },
    {
      "key": "2023070216410137700_c6",
      "doi-asserted-by": "publisher",
      "first-page": "2376",
      "DOI": "10.1063/1.1661506",
      "volume": "43",
      "year": "1972",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2023070216410137700_c7",
      "doi-asserted-by": "publisher",
      "first-page": "524",
      "DOI": "10.1063/1.107440",
      "volume": "60",
      "year": "1991",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023070216410137700_c8",
      "doi-asserted-by": "publisher",
      "first-page": "1085",
      "DOI": "10.1103/PhysRevB.37.1085",
      "volume": "37",
      "year": "1988",
      "journal-title": "Phys. Rev. B"
    },
    {
      "key": "2023070216410137700_c9",
      "doi-asserted-by": "publisher",
      "first-page": "2849",
      "DOI": "10.1063/1.348620",
      "volume": "69",
      "year": "1991",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2023070216410137700_c10",
      "doi-asserted-by": "publisher",
      "first-page": "5879",
      "DOI": "10.1063/1.371606",
      "volume": "86",
      "year": "1999",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2023070216410137700_c11",
      "doi-asserted-by": "publisher",
      "first-page": "3864",
      "DOI": "10.1063/1.126852",
      "volume": "76",
      "year": "2000",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023070216410137700_c12",
      "doi-asserted-by": "publisher",
      "first-page": "013520",
      "DOI": "10.1063/1.1944910",
      "volume": "98",
      "year": "2005",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2023070216410137700_c13",
      "doi-asserted-by": "crossref",
      "first-page": "2347",
      "DOI": "10.1364/AO.39.002347",
      "volume": "39",
      "year": "2000",
      "journal-title": "Appl. Opt."
    },
    {
      "key": "2023070216410137700_c14",
      "doi-asserted-by": "publisher",
      "first-page": "151904",
      "DOI": "10.1063/1.2359354",
      "volume": "89",
      "year": "2006",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023070216410137700_c15",
      "doi-asserted-by": "publisher",
      "first-page": "793",
      "DOI": "10.1063/1.1524305",
      "volume": "93",
      "year": "2003",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2023070216410137700_c16",
      "doi-asserted-by": "publisher",
      "first-page": "605",
      "DOI": "10.1103/RevModPhys.61.605",
      "volume": "61",
      "year": "1989",
      "journal-title": "Rev. Mod. Phys."
    },
    {
      "key": "2023070216410137700_c17",
      "doi-asserted-by": "publisher",
      "first-page": "2957",
      "DOI": "10.1063/1.118755",
      "volume": "70",
      "year": "1997",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023070216410137700_c18",
      "doi-asserted-by": "publisher",
      "first-page": "210",
      "DOI": "10.1016/S0022-3093(01)01034-1",
      "volume": "297",
      "year": "2002",
      "journal-title": "J. Non-Cryst. Solids"
    },
    {
      "year": "2001",
      "key": "2023070216410137700_c19"
    },
    {
      "volume-title": "Electronic Processes in Non-Crystalline Materials",
      "year": "1967",
      "key": "2023070216410137700_c20"
    }
  ],
  "container-title": "Applied Physics Letters",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/1.2784169/10244757/111904_1_online.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/1.2784169/10244757/111904_1_online.pdf",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2023,
        7,
        2
      ]
    ],
    "date-time": "2023-07-02T16:41:07Z",
    "timestamp": 1688316067000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://pubs.aip.org/apl/article/91/11/111904/325411/Thickness-and-stoichiometry-dependence-of-the"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        2007,
        9,
        10
      ]
    ]
  },
  "references-count": 20,
  "journal-issue": {
    "issue": "11",
    "published-print": {
      "date-parts": [
        [
          2007,
          9,
          10
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1063/1.2784169",
  "relation": {},
  "ISSN": [
    "0003-6951",
    "1077-3118"
  ],
  "subject": [],
  "published-other": {
    "date-parts": [
      [
        2007,
        9,
        10
      ]
    ]
  },
  "published": {
    "date-parts": [
      [
        2007,
        9,
        10
      ]
    ]
  },
  "article-number": "111904"
}