Abstract
Experimental investigations of diluted magnetic semiconductors indicate a strong relation between Curie temperature and conductivity. Both quantities depend nontrivially on the concentration of magnetic impurities, the carrier density, and the presence of compensating defects. The authors calculate both Curie temperature and conductivity of (Ga,Mn)As alloys in a self-consistent manner based on the same first-principles Hamiltonian in which the presence of compensating defects is taken into account. The effect of As antisites and Mn interstitials is determined separately, and a good agreement between theory and experiment exists only in the case where the dominating mechanism is due to the Mn interstitials.
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Dates
Type | When |
---|---|
Created | 17 years, 11 months ago (Sept. 7, 2007, 11:11 p.m.) |
Deposited | 2 years, 2 months ago (June 23, 2023, 11:53 p.m.) |
Indexed | 1 month ago (July 30, 2025, 6:49 a.m.) |
Issued | 18 years ago (Sept. 3, 2007) |
Published | 18 years ago (Sept. 3, 2007) |
Published Online | 17 years, 11 months ago (Sept. 7, 2007) |
Published Print | 18 years ago (Sept. 3, 2007) |
@article{Kudrnovsk__2007, title={Relation of Curie temperature and conductivity: (Ga,Mn)As alloy as a case study}, volume={91}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.2778468}, DOI={10.1063/1.2778468}, number={10}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Kudrnovský, J. and Bouzerar, G. and Turek, I.}, year={2007}, month=sep }