DOI: 10.1063/1.2773747. Modification of the electronic properties of GaN nanowires by Mn doping

Modification of the electronic properties of GaN nanowires by Mn doping

10.1063/1.2773747

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

The electronic transport properties of individual GaN nanowire configured as field-effect transistors (FETs) show them to be highly conductive n-type semiconductors. Accordingly, the source-drain current (ISD) of these FETs cannot be varied significantly by the gate potential. When doped with Mn by thermal diffusion, the carrier density of resultant nanowire drops approximately two orders of magnitude likely due to the fact that Mn doping produces deep acceptor states that compensate for the native shallow donors of as-grown GaN nanowires. The ISD of the Mn-doped GaN nanowires could be modulated by a factor of 5 using the gate potential.

Bibliography

Chen, X., Lee, S. J., & Moskovits, M. (2007). Modification of the electronic properties of GaN nanowires by Mn doping. Applied Physics Letters, 91(8).

Authors 3

Xihong Chen (first)
Seung Joon Lee (additional)
Martin Moskovits (additional)

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Dates

Type	When
Created	18 years ago (Aug. 22, 2007, 6:15 p.m.)
Deposited	2 years, 1 month ago (July 2, 2023, 3:53 p.m.)
Indexed	3 weeks, 4 days ago (July 30, 2025, 6:48 a.m.)
Issued	18 years ago (Aug. 20, 2007)
Published	18 years ago (Aug. 20, 2007)
Published Online	18 years ago (Aug. 22, 2007)
Published Print	18 years ago (Aug. 20, 2007)

Funders 0

None

BibTeX

@article{Chen_2007, title={Modification of the electronic properties of GaN nanowires by Mn doping}, volume={91}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.2773747}, DOI={10.1063/1.2773747}, number={8}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Chen, Xihong and Lee, Seung Joon and Moskovits, Martin}, year={2007}, month=aug }

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