DOI: 10.1063/1.2764221. Preparation and thermoelectric properties of heavily Nb-doped SrO(SrTiO3)1 epitaxial films

Preparation and thermoelectric properties of heavily Nb-doped SrO(SrTiO3)1 epitaxial films

10.1063/1.2764221

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

We report the epitaxial film growth, by pulsed laser deposition, of c-axis-oriented Nb-doped SrO(SrTiO3)1 films having a K2NiF4-type structure and their thermoelectric properties over a wide temperature range, from 20 to 800 K. High-resolution x-ray diffraction and reflection high energy electron diffraction patterns revealed that the films were grown heteroepitaxially on the (001) face of the LaAlO3 substrate. The thermoelectric properties of the Nb-doped SrO(SrTiO3)1 epitaxial films were improved in terms of power factor compared to those for polycrystalline Nb-doped SrO(SrTiO3)1. A theoretical analysis of the transport parameters revealed that the intrinsic transport occurred predominantly in the SrTiO3 layers.

Bibliography

Lee, K. H., Ishizaki, A., Kim, S. W., Ohta, H., & Koumoto, K. (2007). Preparation and thermoelectric properties of heavily Nb-doped SrO(SrTiO3)1 epitaxial films. Journal of Applied Physics, 102(3).

Authors 5

Kyu Hyoung Lee (first)
Akihiro Ishizaki (additional)
Sung Wng Kim (additional)
Hiromichi Ohta (additional)
Kunihito Koumoto (additional)

References 20 Referenced 19

10.1107/S0365110X57001929 / Acta Crystallogr. (1957)
10.1107/S0365110X58000128 / Acta Crystallogr. (1958)
10.1103/PhysRevB.47.12727 / Phys. Rev. B (1993)
10.1038/nmat1821 / Nat. Mater. (2007)
10.1063/1.2349559 / J. Appl. Phys. (2006)
10.1063/1.2718280 / J. Appl. Phys. (2007)
10.1063/1.2035889 / Appl. Phys. Lett. (2005)
10.2109/jcersj.114.102 / J. Ceram. Soc. Jpn (2006)
10.1063/1.2362990 / J. Appl. Phys. (2006)
{'key': '2023080220292852700_c10', 'first-page': '93', 'volume-title': 'Phase Diagrams for Ceramists 1969 Supplement', 'author': 'Levin', 'year': '1969'} / Phase Diagrams for Ceramists 1969 Supplement by Levin (1969)
10.1143/JJAP.38.L1443 / Jpn. J. Appl. Phys., Part 2 (1999)
10.1016/j.jssc.2006.02.021 / J. Solid State Chem. (2006)
10.1063/1.1371788 / Appl. Phys. Lett. (2001)
10.1557/JMR.2001.0276 / J. Mater. Res. (2001)
10.1063/1.123888 / Appl. Phys. Lett. (1999)
10.1016/0022-3697(59)90226-4 / J. Phys. Chem. Solids (1959)
10.1063/1.1847723 / J. Appl. Phys. (2005)
{'volume-title': 'Heavily Doped Semiconductors', 'year': '1969', 'key': '2023080220292852700_c18'} / Heavily Doped Semiconductors (1969)
{'key': '2023080220292852700_c19', 'first-page': '724', 'volume': '94', 'year': '1954', 'journal-title': 'Phys. Rev.'} / Phys. Rev. (1954)
10.1007/BF00725893 / J. Mater. Sci. Lett. (1990)

Dates

Type	When
Created	18 years, 1 month ago (Aug. 1, 2007, 6:43 p.m.)
Deposited	2 years, 1 month ago (Aug. 2, 2023, 4:29 p.m.)
Indexed	1 month ago (July 30, 2025, 6:49 a.m.)
Issued	18 years, 1 month ago (Aug. 1, 2007)
Published	18 years, 1 month ago (Aug. 1, 2007)
Published Online	18 years, 1 month ago (Aug. 1, 2007)
Published Print	18 years, 1 month ago (Aug. 1, 2007)

Funders 0

None

BibTeX

@article{Lee_2007, title={Preparation and thermoelectric properties of heavily Nb-doped SrO(SrTiO3)1 epitaxial films}, volume={102}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.2764221}, DOI={10.1063/1.2764221}, number={3}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Lee, Kyu Hyoung and Ishizaki, Akihiro and Kim, Sung Wng and Ohta, Hiromichi and Koumoto, Kunihito}, year={2007}, month=aug }

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