DOI: 10.1063/1.2762297. Fully epitaxial (Zn,Co)O∕ZnO∕(Zn,Co)O junction and its tunnel magnetoresistance

Fully epitaxial (Zn,Co)O∕ZnO∕(Zn,Co)O junction and its tunnel magnetoresistance

10.1063/1.2762297

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

The authors report tunnel magnetoresistance (TMR) and its bias dependence in fully epitaxial (Zn,Co)O∕ZnO∕(Zn,Co)O magnetic tunnel junctions. A positive TMR of 20.8% is obtained at 4K, which can resist up to room temperature with the TMR ratio of 0.35% at 2T, due to improved crystallinity of barriers and electrode/barrier interfaces. The decay of TMR with bias up to 2V is significantly small leading to V1∕2, for which half of the TMR remains, well over 2V, shedding promising light on solving readout problems in gigabit-scale magnetoresistive random access memory.

Bibliography

Song, C., Liu, X. J., Zeng, F., & Pan, F. (2007). Fully epitaxial (Zn,Co)OâZnOâ(Zn,Co)O junction and its tunnel magnetoresistance. Applied Physics Letters, 91(4).

Authors 4

C. Song (first)
X. J. Liu (additional)
F. Zeng (additional)
F. Pan (additional)

References 21 Referenced 33

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Dates

Type	When
Created	18 years ago (July 25, 2007, 6:13 p.m.)
Deposited	2 years, 2 months ago (June 22, 2023, 10:59 p.m.)
Indexed	3 weeks, 4 days ago (July 30, 2025, 6:50 a.m.)
Issued	18 years, 1 month ago (July 23, 2007)
Published	18 years, 1 month ago (July 23, 2007)
Published Online	18 years ago (July 25, 2007)
Published Print	18 years, 1 month ago (July 23, 2007)

Funders 0

None

BibTeX

@article{Song_2007, title={Fully epitaxial (Zn,Co)O∕ZnO∕(Zn,Co)O junction and its tunnel magnetoresistance}, volume={91}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.2762297}, DOI={10.1063/1.2762297}, number={4}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Song, C. and Liu, X. J. and Zeng, F. and Pan, F.}, year={2007}, month=jul }

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