DOI: 10.1063/1.2752582. Light emission from an ambipolar semiconducting polymer field effect transistor: Analysis of the device physics

Light emission from an ambipolar semiconducting polymer field effect transistor: Analysis of the device physics

10.1063/1.2752582

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

Light emitting field-effect transistors (LEFETs) were fabricated with a low work function metal (calcium) and a high work function metal (gold) as the source and drain electrodes. The gold electrode serves as the source for holes into the π band and the drain for electrons from the π* band; the calcium electrode serves as the source for electrons into the π* band and the drain for holes from the π band. For 65V&lt;VG&lt;103V, the LEFET operates in the ambipolar regime. The emission zone has been spatially resolved (as it is moved across the channel by sweeping the gate voltage) using confocal microscopy; the full width at half maximum is 2μm. At the gate voltage extremes (VG=0 or VG=150V), the electron (hole) density extends all the way across the 16μm channel such that the electron (hole) accumulation layer functions as the cathode (anode) for a light-emitting diode, with opposite carrier injection by tunneling; i.e., the carrier densities are sufficiently high that the accumulation layer functions as a low resistance contact, implying near metallic transport.

Bibliography

Swensen, J. S., Yuen, J., Gargas, D., Buratto, S. K., & Heeger, A. J. (2007). Light emission from an ambipolar semiconducting polymer field effect transistor: Analysis of the device physics. Journal of Applied Physics, 102(1).

Authors 5

James S. Swensen (first)
Jonathan Yuen (additional)
Dan Gargas (additional)
Steven K. Buratto (additional)
Alan J. Heeger (additional)

References 12 Referenced 35

10.1063/1.2149986 / Appl. Phys. Lett. (2005)
10.1038/nmat1537 / Nat. Mater. (2006)
10.1002/adma.200601080 / Adv. Mater. (Weinheim, Ger.) (2006)
10.1063/1.2402942 / Appl. Phys. Lett. (2006)
10.1038/nature03376 / Nature (London) (2005)
10.1117/12.644204 / Proc. SPIE (2006)
10.1063/1.1640800 / Appl. Phys. Lett. (2004)
10.1103/PhysRevLett.91.157406 / Phys. Rev. Lett. (2003)
10.1063/1.477370 / J. Chem. Phys. (1998)
10.1063/1.1581352 / J. Appl. Phys. (2003)
{'volume-title': 'Light Emission from an Ambipolar Semiconducting Polymer Field Effect Transistor', 'year': '2007', 'key': '2023070520224474300_c11'} / Light Emission from an Ambipolar Semiconducting Polymer Field Effect Transistor (2007)
10.1103/PhysRevLett.96.246403 / Phys. Rev. Lett. (2006)

Dates

Type	When
Created	18 years, 1 month ago (July 5, 2007, 10:38 p.m.)
Deposited	2 years, 1 month ago (July 5, 2023, 7:56 p.m.)
Indexed	3 weeks, 4 days ago (July 30, 2025, 6:49 a.m.)
Issued	18 years, 1 month ago (July 1, 2007)
Published	18 years, 1 month ago (July 1, 2007)
Published Online	18 years, 1 month ago (July 5, 2007)
Published Print	18 years, 1 month ago (July 1, 2007)

Funders 0

None

BibTeX

@article{Swensen_2007, title={Light emission from an ambipolar semiconducting polymer field effect transistor: Analysis of the device physics}, volume={102}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.2752582}, DOI={10.1063/1.2752582}, number={1}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Swensen, James S. and Yuen, Jonathan and Gargas, Dan and Buratto, Steven K. and Heeger, Alan J.}, year={2007}, month=jul }

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