Abstract
The authors developed an ambipolar field-effect transistor (FET) based on an organic-inorganic hybrid structure that consisted of an indium zinc oxide and pentacene double layer fabricated on a SiO2∕n++-Si substrate. Although the FETs based on an indium zinc oxide or pentacene single layer only showed unipolar FET characteristics, the hybrid FET showed definite ambipolar FET characteristics. The authors obtained a highly saturated field-effect hole and electron mobilities of 0.14 and 13.8cm2∕Vs. Furthermore, the authors demonstrated electroluminescence from hybrid FETs using tetracene as an emitting layer. The authors’ success shows that the hybridization of organic and inorganic materials opens up a new field in electronics.
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Dates
Type | When |
---|---|
Created | 18 years, 2 months ago (June 26, 2007, 6:12 p.m.) |
Deposited | 2 years, 2 months ago (July 3, 2023, 12:31 a.m.) |
Indexed | 1 month, 1 week ago (July 30, 2025, 6:49 a.m.) |
Issued | 18 years, 2 months ago (June 25, 2007) |
Published | 18 years, 2 months ago (June 25, 2007) |
Published Online | 18 years, 2 months ago (June 26, 2007) |
Published Print | 18 years, 2 months ago (June 25, 2007) |
@article{Nakanotani_2007, title={Ambipolar field-effect transistor based on organic-inorganic hybrid structure}, volume={90}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.2752023}, DOI={10.1063/1.2752023}, number={26}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Nakanotani, Hajime and Yahiro, Masayuki and Adachi, Chihaya and Yano, Koki}, year={2007}, month=jun }