DOI: 10.1063/1.2749846. Anode-interface localized filamentary mechanism in resistive switching of TiO2 thin films

Anode-interface localized filamentary mechanism in resistive switching of TiO2 thin films

10.1063/1.2749846

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

The filamentary resistance switching mechanism of a Pt∕40nm TiO2∕Pt capacitor structure in voltage sweep mode was investigated. It was unambiguously found that the conducting filaments propagate from the cathode interface and that the resistance switching is induced by the rupture and recovery of the filaments in the localized region (3–10nm thick) near the anode. The electrical conduction behavior in the high resistance state was well explained by the space charge limited current (SCLC) mechanism that occurs in the filament-free region. The various parameters extracted from the SCLC fitting supported the localized rupture and formation of filaments near the anode.

Bibliography

Kim, K. M., Choi, B. J., Shin, Y. C., Choi, S., & Hwang, C. S. (2007). Anode-interface localized filamentary mechanism in resistive switching of TiO2 thin films. Applied Physics Letters, 91(1).

Authors 5

Kyung Min Kim (first)
Byung Joon Choi (additional)
Yong Cheol Shin (additional)
Seol Choi (additional)
Cheol Seong Hwang (additional)

References 11 Referenced 378

10.1063/1.1968416 / Appl. Phys. Lett. (2005)
10.1063/1.2001146 / J. Appl. Phys. (2005)
10.1063/1.2219726 / Appl. Phys. Lett. (2006)
10.1063/1.2397006 / Appl. Phys. Lett. (2006)
10.1063/1.2712777 / Appl. Phys. Lett. (2007)
10.1103/PhysRevB.73.193202 / Phys. Rev. B (2006)
10.1149/1.2353899 / Electrochem. Solid-State Lett. (2006)
10.1063/1.2748312 / Appl. Phys. Lett. (2007)
10.1063/1.2361268 / Appl. Phys. Lett. (2006)
{'first-page': '150', 'volume-title': 'Electrical Transport in Solids', 'year': '1981', 'key': '2023072721473259100_c10'} / Electrical Transport in Solids (1981)
10.1103/PhysRevB.73.113317 / Phys. Rev. B (2006)

Dates

Type	When
Created	18 years, 1 month ago (July 7, 2007, 6:21 p.m.)
Deposited	2 years ago (July 27, 2023, 5:47 p.m.)
Indexed	1 week, 4 days ago (Aug. 12, 2025, 5:56 p.m.)
Issued	18 years, 1 month ago (July 2, 2007)
Published	18 years, 1 month ago (July 2, 2007)
Published Online	18 years, 1 month ago (July 6, 2007)
Published Print	18 years, 1 month ago (July 2, 2007)

Funders 0

None

BibTeX

@article{Kim_2007, title={Anode-interface localized filamentary mechanism in resistive switching of TiO2 thin films}, volume={91}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.2749846}, DOI={10.1063/1.2749846}, number={1}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Kim, Kyung Min and Choi, Byung Joon and Shin, Yong Cheol and Choi, Seol and Hwang, Cheol Seong}, year={2007}, month=jul }

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