DOI: 10.1063/1.2748308. Annealing condition optimization and electrical characterization of amorphous LaAlO3∕GaAs metal-oxide-semiconductor capacitors

Annealing condition optimization and electrical characterization of amorphous LaAlO3∕GaAs metal-oxide-semiconductor capacitors

10.1063/1.2748308

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

The electrical properties of amorphous LaAlO3∕GaAs metal-oxide-semiconductor capacitors fabricated using molecular-beam deposition are investigated. The surface was protected during sample transfer between III-V and oxide molecular beam epitaxy chambers by a thick arsenic-capping layer. Amorphous LaAlO3 was deposited on c(4×4) and (2×4) reconstructed (100) GaAs surfaces. An annealing method, a low temperature-short time rapid thermal annealing (RTA) followed by a high temperature RTA, was developed, yielding extremely small hysteresis (∼30mV), frequency dispersion (∼60mV), and interfacial trap density (mid-1010eV−1cm−2).

Bibliography

Choi, D., Harris, J. S., Warusawithana, M., & Schlom, D. G. (2007). Annealing condition optimization and electrical characterization of amorphous LaAlO3âGaAs metal-oxide-semiconductor capacitors. Applied Physics Letters, 90(24).

Authors 4

Donghun Choi (first)
James S. Harris (additional)
Maitri Warusawithana (additional)
Darrell G. Schlom (additional)

References 13 Referenced 23

{'key': '2023062403585705100_c1', 'first-page': '216', 'volume': '50', 'year': '1980', 'journal-title': 'Inst. Phys. Conf. Ser.'} / Inst. Phys. Conf. Ser. (1980)
10.1116/1.570583 / J. Vac. Sci. Technol. (1980)
10.1063/1.90329 / Appl. Phys. Lett. (1978)
10.1109/16.557709 / IEEE Trans. Electron Devices (1997)
10.1109/LED.2003.812144 / IEEE Trans. Electron Devices (2003)
10.1063/1.1515112 / Appl. Phys. Lett. (2002)
10.1063/1.1644055 / Appl. Phys. Lett. (2004)
10.1063/1.2182019 / Appl. Phys. Lett. (2006)
{'volume-title': 'Mater. Res. Soc. Symp. Proc.', 'key': '2023062403585705100_c9'} / Mater. Res. Soc. Symp. Proc.
10.1116/1.588130 / J. Vac. Sci. Technol. B (1995)
10.1116/1.584940 / J. Vac. Sci. Technol. B (1990)
10.1103/PhysRevB.65.165315 / Phys. Rev. B (2002)
{'first-page': '197', 'volume-title': 'MOS (Metal Oxide Semiconductor) Physics and Techonlogy', 'year': '2003', 'key': '2023062403585705100_c13'} / MOS (Metal Oxide Semiconductor) Physics and Techonlogy (2003)

Dates

Type	When
Created	18 years, 2 months ago (June 14, 2007, 1:13 a.m.)
Deposited	2 years, 2 months ago (June 24, 2023, 12:43 p.m.)
Indexed	1 month, 1 week ago (July 30, 2025, 6:48 a.m.)
Issued	18 years, 2 months ago (June 11, 2007)
Published	18 years, 2 months ago (June 11, 2007)
Published Online	18 years, 2 months ago (June 13, 2007)
Published Print	18 years, 2 months ago (June 11, 2007)

Funders 0

None

BibTeX

@article{Choi_2007, title={Annealing condition optimization and electrical characterization of amorphous LaAlO3∕GaAs metal-oxide-semiconductor capacitors}, volume={90}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.2748308}, DOI={10.1063/1.2748308}, number={24}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Choi, Donghun and Harris, James S. and Warusawithana, Maitri and Schlom, Darrell G.}, year={2007}, month=jun }

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