DOI: 10.1063/1.2747192. Field emission display device structure based on double-gate driving principle for achieving high brightness using a variety of field emission nanoemitters

Field emission display device structure based on double-gate driving principle for achieving high brightness using a variety of field emission nanoemitters

10.1063/1.2747192

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

In order to apply various cold cathode nanoemitters in a field emission display (FED) and to achieve high brightness, a FED device structure with double gates and corresponding driving method have been proposed. Individual pixel addressing can be achieved by applying proper sequence of positive or negative voltage to the lower gate and upper gate, respectively. The feasibility of the device has been demonstrated by using carbon nanotube and tungsten oxide nanowire cold emitters. Display of moving images has been demonstrated and high luminance up to 2500cd∕m2 was obtained. The reported device structure is versatile for nanoemitters regardless of substrate or preparation temperature. The results are of significance to the development of FED using nanoemitters.

Bibliography

Chen, J., Dai, Y. Y., Luo, J., Li, Z. L., Deng, S. Z., She, J. C., & Xu, N. S. (2007). Field emission display device structure based on double-gate driving principle for achieving high brightness using a variety of field emission nanoemitters. Applied Physics Letters, 90(25).

Authors 7

Jun Chen (first)
Y. Y. Dai (additional)
J. Luo (additional)
Z. L. Li (additional)
S. Z. Deng (additional)
J. C. She (additional)
N. S. Xu (additional)

References 19 Referenced 60

10.1016/j.mser.2004.12.001 / Mater. Sci. Eng., R. (2005)
10.1063/1.125253 / Appl. Phys. Lett. (1999)
10.1116/1.1387451 / J. Vac. Sci. Technol. B (2001)
10.1063/1.1575937 / Appl. Phys. Lett. (2003)
Hao Ren, Ph.D. thesis, Sun Yat-sen University, 2005.
10.1889/1.1847735 / J. Soc. Inf. Disp. (2004)
10.1063/1.1476703 / Appl. Phys. Lett. (2002)
10.1063/1.1595156 / Appl. Phys. Lett. (2003)
10.1002/adma.200305528 / Adv. Mater. (Weinheim, Ger.) (2003)
10.1063/1.2162692 / Appl. Phys. Lett. (2006)
10.1063/1.2220481 / Appl. Phys. Lett. (2006)
10.1063/1.1518810 / Appl. Phys. Lett. (2002)
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10.1063/1.2345278 / Appl. Phys. Lett. (2006)
10.1063/1.2428543 / Appl. Phys. Lett. (2007)
10.1063/1.2136006 / Appl. Phys. Lett. (2005)
10.1088/0957-4484/17/22/011 / Nanotechnology (2006)
{'key': '2023062412505610800_c18'}
10.1016/S0038-1101(00)00213-6 / Solid-State Electron. (2001)

Dates

Type	When
Created	18 years, 2 months ago (June 20, 2007, 7:01 p.m.)
Deposited	2 years, 1 month ago (June 24, 2023, 9:35 p.m.)
Indexed	3 weeks, 2 days ago (July 30, 2025, 6:48 a.m.)
Issued	18 years, 2 months ago (June 18, 2007)
Published	18 years, 2 months ago (June 18, 2007)
Published Online	18 years, 2 months ago (June 19, 2007)
Published Print	18 years, 2 months ago (June 18, 2007)

Funders 0

None

BibTeX

@article{Chen_2007, title={Field emission display device structure based on double-gate driving principle for achieving high brightness using a variety of field emission nanoemitters}, volume={90}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.2747192}, DOI={10.1063/1.2747192}, number={25}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Chen, Jun and Dai, Y. Y. and Luo, J. and Li, Z. L. and Deng, S. Z. and She, J. C. and Xu, N. S.}, year={2007}, month=jun }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        7,
        30
      ]
    ],
    "date-time": "2025-07-30T10:48:31Z",
    "timestamp": 1753872511137,
    "version": "3.41.2"
  },
  "reference-count": 19,
  "publisher": "AIP Publishing",
  "issue": "25",
  "content-domain": {
    "domain": [
      "pubs.aip.org"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        2007,
        6,
        18
      ]
    ]
  },
  "abstract": "<jats:p>In order to apply various cold cathode nanoemitters in a field emission display (FED) and to achieve high brightness, a FED device structure with double gates and corresponding driving method have been proposed. Individual pixel addressing can be achieved by applying proper sequence of positive or negative voltage to the lower gate and upper gate, respectively. The feasibility of the device has been demonstrated by using carbon nanotube and tungsten oxide nanowire cold emitters. Display of moving images has been demonstrated and high luminance up to 2500cd\u2215m2 was obtained. The reported device structure is versatile for nanoemitters regardless of substrate or preparation temperature. The results are of significance to the development of FED using nanoemitters.</jats:p>",
  "DOI": "10.1063/1.2747192",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2007,
        6,
        20
      ]
    ],
    "date-time": "2007-06-20T23:01:05Z",
    "timestamp": 1182380465000
  },
  "update-policy": "https://doi.org/10.1063/aip-crossmark-policy-page",
  "source": "Crossref",
  "is-referenced-by-count": 60,
  "title": "Field emission display device structure based on double-gate driving principle for achieving high brightness using a variety of field emission nanoemitters",
  "prefix": "10.1063",
  "volume": "90",
  "author": [
    {
      "given": "Jun",
      "family": "Chen",
      "sequence": "first",
      "affiliation": [
        {
          "name": "Sun Yat-sen (Zhongshan) University State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, , Guangzhou 510275, People\u2019s Republic of China and Guangdong Province Key Laboratory of Display Materials and Technologies, School of Physics and Engineering, , Guangzhou 510275, People\u2019s Republic of China"
        },
        {
          "name": "Sun Yat-sen (Zhongshan) University State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, , Guangzhou 510275, People\u2019s Republic of China and Guangdong Province Key Laboratory of Display Materials and Technologies, School of Physics and Engineering, , Guangzhou 510275, People\u2019s Republic of China"
        }
      ]
    },
    {
      "given": "Y. Y.",
      "family": "Dai",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Sun Yat-sen (Zhongshan) University State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, , Guangzhou 510275, People\u2019s Republic of China and Guangdong Province Key Laboratory of Display Materials and Technologies, School of Physics and Engineering, , Guangzhou 510275, People\u2019s Republic of China"
        },
        {
          "name": "Sun Yat-sen (Zhongshan) University State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, , Guangzhou 510275, People\u2019s Republic of China and Guangdong Province Key Laboratory of Display Materials and Technologies, School of Physics and Engineering, , Guangzhou 510275, People\u2019s Republic of China"
        }
      ]
    },
    {
      "given": "J.",
      "family": "Luo",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Sun Yat-sen (Zhongshan) University State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, , Guangzhou 510275, People\u2019s Republic of China and Guangdong Province Key Laboratory of Display Materials and Technologies, School of Physics and Engineering, , Guangzhou 510275, People\u2019s Republic of China"
        },
        {
          "name": "Sun Yat-sen (Zhongshan) University State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, , Guangzhou 510275, People\u2019s Republic of China and Guangdong Province Key Laboratory of Display Materials and Technologies, School of Physics and Engineering, , Guangzhou 510275, People\u2019s Republic of China"
        }
      ]
    },
    {
      "given": "Z. L.",
      "family": "Li",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Sun Yat-sen (Zhongshan) University State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, , Guangzhou 510275, People\u2019s Republic of China and Guangdong Province Key Laboratory of Display Materials and Technologies, School of Physics and Engineering, , Guangzhou 510275, People\u2019s Republic of China"
        },
        {
          "name": "Sun Yat-sen (Zhongshan) University State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, , Guangzhou 510275, People\u2019s Republic of China and Guangdong Province Key Laboratory of Display Materials and Technologies, School of Physics and Engineering, , Guangzhou 510275, People\u2019s Republic of China"
        }
      ]
    },
    {
      "given": "S. Z.",
      "family": "Deng",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Sun Yat-sen (Zhongshan) University State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, , Guangzhou 510275, People\u2019s Republic of China and Guangdong Province Key Laboratory of Display Materials and Technologies, School of Physics and Engineering, , Guangzhou 510275, People\u2019s Republic of China"
        },
        {
          "name": "Sun Yat-sen (Zhongshan) University State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, , Guangzhou 510275, People\u2019s Republic of China and Guangdong Province Key Laboratory of Display Materials and Technologies, School of Physics and Engineering, , Guangzhou 510275, People\u2019s Republic of China"
        }
      ]
    },
    {
      "given": "J. C.",
      "family": "She",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Sun Yat-sen (Zhongshan) University State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, , Guangzhou 510275, People\u2019s Republic of China and Guangdong Province Key Laboratory of Display Materials and Technologies, School of Physics and Engineering, , Guangzhou 510275, People\u2019s Republic of China"
        },
        {
          "name": "Sun Yat-sen (Zhongshan) University State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, , Guangzhou 510275, People\u2019s Republic of China and Guangdong Province Key Laboratory of Display Materials and Technologies, School of Physics and Engineering, , Guangzhou 510275, People\u2019s Republic of China"
        }
      ]
    },
    {
      "given": "N. S.",
      "family": "Xu",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Sun Yat-sen (Zhongshan) University State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, , Guangzhou 510275, People\u2019s Republic of China and Guangdong Province Key Laboratory of Display Materials and Technologies, School of Physics and Engineering, , Guangzhou 510275, People\u2019s Republic of China"
        },
        {
          "name": "Sun Yat-sen (Zhongshan) University State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, , Guangzhou 510275, People\u2019s Republic of China and Guangdong Province Key Laboratory of Display Materials and Technologies, School of Physics and Engineering, , Guangzhou 510275, People\u2019s Republic of China"
        }
      ]
    }
  ],
  "member": "317",
  "published-online": {
    "date-parts": [
      [
        2007,
        6,
        19
      ]
    ]
  },
  "reference": [
    {
      "key": "2023062412505610800_c1",
      "doi-asserted-by": "publisher",
      "first-page": "47",
      "DOI": "10.1016/j.mser.2004.12.001",
      "volume": "48",
      "year": "2005",
      "journal-title": "Mater. Sci. Eng., R."
    },
    {
      "key": "2023062412505610800_c2",
      "doi-asserted-by": "publisher",
      "first-page": "3129",
      "DOI": "10.1063/1.125253",
      "volume": "75",
      "year": "1999",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023062412505610800_c3",
      "doi-asserted-by": "publisher",
      "first-page": "1370",
      "DOI": "10.1116/1.1387451",
      "volume": "19",
      "year": "2001",
      "journal-title": "J. Vac. Sci. Technol. B"
    },
    {
      "key": "2023062412505610800_c4",
      "doi-asserted-by": "publisher",
      "first-page": "3565",
      "DOI": "10.1063/1.1575937",
      "volume": "82",
      "year": "2003",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023062412505610800_c5",
      "unstructured": "Hao\u2008Ren, Ph.D. thesis, Sun Yat-sen University, 2005."
    },
    {
      "key": "2023062412505610800_c6",
      "doi-asserted-by": "publisher",
      "first-page": "373",
      "DOI": "10.1889/1.1847735",
      "volume": "12",
      "year": "2004",
      "journal-title": "J. Soc. Inf. Disp."
    },
    {
      "key": "2023062412505610800_c7",
      "doi-asserted-by": "publisher",
      "first-page": "3829",
      "DOI": "10.1063/1.1476703",
      "volume": "80",
      "year": "2002",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023062412505610800_c8",
      "doi-asserted-by": "publisher",
      "first-page": "746",
      "DOI": "10.1063/1.1595156",
      "volume": "83",
      "year": "2003",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023062412505610800_c9",
      "doi-asserted-by": "publisher",
      "first-page": "1835",
      "DOI": "10.1002/adma.200305528",
      "volume": "15",
      "year": "2003",
      "journal-title": "Adv. Mater. (Weinheim, Ger.)"
    },
    {
      "key": "2023062412505610800_c10",
      "doi-asserted-by": "publisher",
      "first-page": "013112",
      "DOI": "10.1063/1.2162692",
      "volume": "88",
      "year": "2006",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023062412505610800_c11",
      "doi-asserted-by": "publisher",
      "first-page": "023118",
      "DOI": "10.1063/1.2220481",
      "volume": "89",
      "year": "2006",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023062412505610800_c12",
      "doi-asserted-by": "publisher",
      "first-page": "3648",
      "DOI": "10.1063/1.1518810",
      "volume": "81",
      "year": "2002",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023062412505610800_c13",
      "doi-asserted-by": "publisher",
      "first-page": "223113",
      "DOI": "10.1063/1.2132523",
      "volume": "87",
      "year": "2005",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023062412505610800_c14",
      "doi-asserted-by": "publisher",
      "first-page": "123102",
      "DOI": "10.1063/1.2345278",
      "volume": "89",
      "year": "2006",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023062412505610800_c15",
      "doi-asserted-by": "publisher",
      "first-page": "033112",
      "DOI": "10.1063/1.2428543",
      "volume": "90",
      "year": "2007",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023062412505610800_c16",
      "doi-asserted-by": "publisher",
      "first-page": "223108",
      "DOI": "10.1063/1.2136006",
      "volume": "87",
      "year": "2005",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023062412505610800_c17",
      "doi-asserted-by": "publisher",
      "first-page": "5590",
      "DOI": "10.1088/0957-4484/17/22/011",
      "volume": "17",
      "year": "2006",
      "journal-title": "Nanotechnology"
    },
    {
      "key": "2023062412505610800_c18"
    },
    {
      "key": "2023062412505610800_c19",
      "doi-asserted-by": "publisher",
      "first-page": "893",
      "DOI": "10.1016/S0038-1101(00)00213-6",
      "volume": "45",
      "year": "2001",
      "journal-title": "Solid-State Electron."
    }
  ],
  "container-title": "Applied Physics Letters",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/1.2747192/13960604/253105_1_online.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/1.2747192/13960604/253105_1_online.pdf",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2023,
        6,
        25
      ]
    ],
    "date-time": "2023-06-25T01:35:08Z",
    "timestamp": 1687656908000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://pubs.aip.org/apl/article/90/25/253105/152337/Field-emission-display-device-structure-based-on"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        2007,
        6,
        18
      ]
    ]
  },
  "references-count": 19,
  "journal-issue": {
    "issue": "25",
    "published-print": {
      "date-parts": [
        [
          2007,
          6,
          18
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1063/1.2747192",
  "relation": {},
  "ISSN": [
    "0003-6951",
    "1077-3118"
  ],
  "subject": [],
  "published-other": {
    "date-parts": [
      [
        2007,
        6,
        18
      ]
    ]
  },
  "published": {
    "date-parts": [
      [
        2007,
        6,
        18
      ]
    ]
  },
  "article-number": "253105"
}