DOI: 10.1063/1.2746084. Room temperature deposited indium zinc oxide thin film transistors

Room temperature deposited indium zinc oxide thin film transistors

10.1063/1.2746084

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Depletion-mode indium zinc oxide (IZO) channel thin film transistors were fabricated on glass substrates from layers deposited at room temperature using rf magnetron sputtering. The threshold voltage was in the range from −5.5to−6.5V depending on gate dielectric (SiO2) thickness and the drain current on-to-off ratio was ∼105. The maximum field effect mobility in the channel was ∼4.5cm2V−1s−1, lower than the Hall mobility of ∼17cm2V−1s−1 in the same layers, suggesting a strong influence of scattering due to trapped charges at the SiO2-IZO interface. The low deposition and processing temperatures make these devices suitable for applications requiring flexible substrates.

Bibliography

Wang, Y.-L., Ren, F., Lim, W., Norton, D. P., Pearton, S. J., Kravchenko, I. I., & Zavada, J. M. (2007). Room temperature deposited indium zinc oxide thin film transistors. Applied Physics Letters, 90(23).

Authors 7

Yu-Lin Wang (first)
F. Ren (additional)
Wantae Lim (additional)
D. P. Norton (additional)
S. J. Pearton (additional)
I. I. Kravchenko (additional)
J. M. Zavada (additional)

References 23 Referenced 125

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{'key': '2023080607382861600_c20', 'first-page': '99', 'volume': '6', 'year': '2006', 'journal-title': 'Thin Solid Films'} / Thin Solid Films (2006)
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Dates

Type	When
Created	18 years, 3 months ago (June 4, 2007, 6:09 p.m.)
Deposited	2 years, 1 month ago (Aug. 6, 2023, 3:38 a.m.)
Indexed	1 month ago (July 30, 2025, 6:49 a.m.)
Issued	18 years, 3 months ago (June 4, 2007)
Published	18 years, 3 months ago (June 4, 2007)
Published Online	18 years, 3 months ago (June 4, 2007)
Published Print	18 years, 3 months ago (June 4, 2007)

Funders 0

None

BibTeX

@article{Wang_2007, title={Room temperature deposited indium zinc oxide thin film transistors}, volume={90}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.2746084}, DOI={10.1063/1.2746084}, number={23}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Wang, Yu-Lin and Ren, F. and Lim, Wantae and Norton, D. P. and Pearton, S. J. and Kravchenko, I. I. and Zavada, J. M.}, year={2007}, month=jun }

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