DOI: 10.1063/1.2743383. Kelvin probe force microscopy study of surface potential transients in cleaved AlGaN∕GaN high electron mobility transistors

Kelvin probe force microscopy study of surface potential transients in cleaved AlGaN∕GaN high electron mobility transistors

10.1063/1.2743383

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

The surface potential of cleaved cross sections of AlGaN∕GaN high electron mobility transistors was measured by Kelvin probe force microscopy. For the bias conditions of Vgs=−5V and Vds=20V, the electric field was concentrated near the GaN∕SiC interface under the gate and between the gate and drain electrodes. A negative potential that decreased over time was observed in the GaN layer beginning 10min after the bias stress was removed. The transient surface potential was found to be well described by an exponential dependence with two time constants: 11 and 55s.

Bibliography

Kamiya, S., Iwami, M., Tsuchiya, T., Kurouchi, M., Kikawa, J., Yamada, T., Wakejima, A., Miyamoto, H., Suzuki, A., Hinoki, A., Araki, T., & Nanishi, Y. (2007). Kelvin probe force microscopy study of surface potential transients in cleaved AlGaNâGaN high electron mobility transistors. Applied Physics Letters, 90(21).

Authors 12

S. Kamiya (first)
M. Iwami (additional)
T. Tsuchiya (additional)
M. Kurouchi (additional)
J. Kikawa (additional)
T. Yamada (additional)
A. Wakejima (additional)
H. Miyamoto (additional)
A. Suzuki (additional)
A. Hinoki (additional)
T. Araki (additional)
Y. Nanishi (additional)

References 10 Referenced 20

10.1109/TMTT.2004.837159 / IEEE Trans. Microwave Theory Tech. (2004)
10.1109/16.906451 / IEEE Trans. Electron Devices (2001)
10.1109/TED.2003.816549 / IEEE Trans. Electron Devices (2003)
10.1109/TED.2003.812489 / IEEE Trans. Electron Devices (2003)
10.1002/pssa.200303464 / Phys. Status Solidi A (2003)
10.1063/1.2126145 / Appl. Phys. Lett. (2005)
10.1063/1.1371941 / J. Appl. Phys. (2001)
10.1063/1.1835551 / Appl. Phys. Lett. (2004)
10.1063/1.1867553 / Appl. Phys. Lett. (2005)
10.1143/JJAP.36.1826 / Jpn. J. Appl. Phys., Part 1 (1997)

Dates

Type	When
Created	18 years, 3 months ago (May 25, 2007, 7:04 p.m.)
Deposited	2 years, 2 months ago (July 3, 2023, 12:21 a.m.)
Indexed	1 month ago (July 30, 2025, 6:48 a.m.)
Issued	18 years, 3 months ago (May 21, 2007)
Published	18 years, 3 months ago (May 21, 2007)
Published Online	18 years, 3 months ago (May 25, 2007)
Published Print	18 years, 3 months ago (May 21, 2007)

Funders 0

None

BibTeX

@article{Kamiya_2007, title={Kelvin probe force microscopy study of surface potential transients in cleaved AlGaN∕GaN high electron mobility transistors}, volume={90}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.2743383}, DOI={10.1063/1.2743383}, number={21}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Kamiya, S. and Iwami, M. and Tsuchiya, T. and Kurouchi, M. and Kikawa, J. and Yamada, T. and Wakejima, A. and Miyamoto, H. and Suzuki, A. and Hinoki, A. and Araki, T. and Nanishi, Y.}, year={2007}, month=may }

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