DOI: 10.1063/1.2740359. The role of proximity caps during the annealing of UV-ozone oxidized GaAs

The role of proximity caps during the annealing of UV-ozone oxidized GaAs

10.1063/1.2740359

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

This study provides a deeper insight into the chemistry and physics of the common engineering practice of using a proximity cap, while annealing compound semiconductors such as GaAs. We have studied the cases of a GaAs proximity cap, a Si proximity cap, and no proximity cap. Using x-ray photoelectron spectroscopy, it has been found that annealing increases the gallium to arsenic ratio in the oxide layer in all cases. During the annealing of UV-ozone oxidized GaAs, it has been observed that GaAs proximity caps also serve as a sacrificial layer to accelerate the desorption of oxide species. In all cases surface deterioration due to pit formation has been observed, and the depth of pits is found to depend on the effective role played by the capping material. Energy dispersive x-ray analysis provides additional evidence that pits mainly consist of elemental As and gallium oxide, with most of the elemental As situated at the pit-substrate interface. Deposition of a thin layer of gold and subsequent annealing to 500°C for 300s under different capping conditions shows the use of a proximate cap to be practically insignificant in annealing Au deposited films.

Bibliography

Ghosh, S. C., Biesinger, M. C., LaPierre, R. R., & Kruse, P. (2007). The role of proximity caps during the annealing of UV-ozone oxidized GaAs. Journal of Applied Physics, 101(11).

Authors 4

S. C. Ghosh (first)
M. C. Biesinger (additional)
R. R. LaPierre (additional)
P. Kruse (additional)

References 24 Referenced 15

10.1063/1.1560875 / Appl. Phys. Lett. (2003)
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10.1049/el:19840084 / Electron. Lett. (1984)
10.1063/1.332767 / J. Appl. Phys. (1983)
10.1063/1.93667 / Appl. Phys. Lett. (1982)
10.1149/1.2113657 / J. Electrochem. Soc. (1985)
10.1063/1.339316 / J. Appl. Phys. (1987)
10.1116/1.586539 / J. Vac. Sci. Technol. B (1993)
10.1063/1.459325 / J. Chem. Phys. (1990)
{'volume-title': 'CRC Handbook of Chemistry and Physics', 'year': '1994', 'key': '2023080505033907200_c11'} / CRC Handbook of Chemistry and Physics (1994)
10.1016/S0040-6090(02)00316-4 / Thin Solid Films (2002)
10.1016/0039-6028(86)90889-7 / Surf. Sci. (1986)
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10.1016/S0022-0248(02)02312-6 / J. Cryst. Growth (2003)
10.1103/PhysRevB.56.4966 / Phys. Rev. B (1997)
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10.1002/sia.740070104 / Surf. Interface Anal. (1985)
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{'key': '2023080505033907200_c20'}
10.1143/JJAP.31.L721 / Jpn. J. Appl. Phys., Part 2 (1992)
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Dates

Type	When
Created	18 years, 2 months ago (June 14, 2007, 6:07 p.m.)
Deposited	2 years ago (Aug. 5, 2023, 1:05 a.m.)
Indexed	1 month ago (July 30, 2025, 6:49 a.m.)
Issued	18 years, 3 months ago (June 1, 2007)
Published	18 years, 3 months ago (June 1, 2007)
Published Online	18 years, 2 months ago (June 14, 2007)
Published Print	18 years, 3 months ago (June 1, 2007)

Funders 0

None

BibTeX

@article{Ghosh_2007, title={The role of proximity caps during the annealing of UV-ozone oxidized GaAs}, volume={101}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.2740359}, DOI={10.1063/1.2740359}, number={11}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Ghosh, S. C. and Biesinger, M. C. and LaPierre, R. R. and Kruse, P.}, year={2007}, month=jun }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        7,
        30
      ]
    ],
    "date-time": "2025-07-30T10:49:03Z",
    "timestamp": 1753872543303,
    "version": "3.41.2"
  },
  "reference-count": 24,
  "publisher": "AIP Publishing",
  "issue": "11",
  "content-domain": {
    "domain": [
      "pubs.aip.org"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        2007,
        6,
        1
      ]
    ]
  },
  "abstract": "<jats:p>This study provides a deeper insight into the chemistry and physics of the common engineering practice of using a proximity cap, while annealing compound semiconductors such as GaAs. We have studied the cases of a GaAs proximity cap, a Si proximity cap, and no proximity cap. Using x-ray photoelectron spectroscopy, it has been found that annealing increases the gallium to arsenic ratio in the oxide layer in all cases. During the annealing of UV-ozone oxidized GaAs, it has been observed that GaAs proximity caps also serve as a sacrificial layer to accelerate the desorption of oxide species. In all cases surface deterioration due to pit formation has been observed, and the depth of pits is found to depend on the effective role played by the capping material. Energy dispersive x-ray analysis provides additional evidence that pits mainly consist of elemental As and gallium oxide, with most of the elemental As situated at the pit-substrate interface. Deposition of a thin layer of gold and subsequent annealing to 500\u00b0C for 300s under different capping conditions shows the use of a proximate cap to be practically insignificant in annealing Au deposited films.</jats:p>",
  "DOI": "10.1063/1.2740359",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2007,
        6,
        14
      ]
    ],
    "date-time": "2007-06-14T22:07:28Z",
    "timestamp": 1181858848000
  },
  "update-policy": "https://doi.org/10.1063/aip-crossmark-policy-page",
  "source": "Crossref",
  "is-referenced-by-count": 15,
  "title": "The role of proximity caps during the annealing of UV-ozone oxidized GaAs",
  "prefix": "10.1063",
  "volume": "101",
  "author": [
    {
      "given": "S. C.",
      "family": "Ghosh",
      "sequence": "first",
      "affiliation": [
        {
          "name": "McMaster University Center for Emerging Device Technologies, Department of Engineering Physics, , 1280 Main Street West, Hamilton, Ontario L8S 4L7, Canada"
        }
      ]
    },
    {
      "given": "M. C.",
      "family": "Biesinger",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "University of Western Ontario Surface Science Western, Room G-1, Western Science Center, , London, Ontario N6A 5B7, Canada"
        }
      ]
    },
    {
      "given": "R. R.",
      "family": "LaPierre",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "McMaster University Center for Emerging Device Technologies, Department of Engineering Physics, , 1280 Main Street West, Hamilton, Ontario L8S 4L7, Canada"
        }
      ]
    },
    {
      "given": "P.",
      "family": "Kruse",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "McMaster University Department of Chemistry, , 1280 Main Street West, Hamilton, Ontario L8S 4M1, Canada and Center for Emerging Device Technologies, , 1280 Main Street West, Hamilton, Ontario L8S 4L7, Canada"
        },
        {
          "name": "McMaster University Department of Chemistry, , 1280 Main Street West, Hamilton, Ontario L8S 4M1, Canada and Center for Emerging Device Technologies, , 1280 Main Street West, Hamilton, Ontario L8S 4L7, Canada"
        }
      ]
    }
  ],
  "member": "317",
  "published-online": {
    "date-parts": [
      [
        2007,
        6,
        14
      ]
    ]
  },
  "reference": [
    {
      "key": "2023080505033907200_c1",
      "doi-asserted-by": "publisher",
      "first-page": "1691",
      "DOI": "10.1063/1.1560875",
      "volume": "82",
      "year": "2003",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023080505033907200_c2",
      "doi-asserted-by": "crossref",
      "first-page": "114322",
      "DOI": "10.1063/1.2743729",
      "volume": "101",
      "year": "2007",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2023080505033907200_c3",
      "doi-asserted-by": "crossref",
      "first-page": "2348",
      "DOI": "10.1016/j.apsusc.2006.05.113",
      "volume": "253",
      "year": "2006",
      "journal-title": "Appl. Surf. Sci."
    },
    {
      "key": "2023080505033907200_c4",
      "doi-asserted-by": "publisher",
      "first-page": "125",
      "DOI": "10.1049/el:19840084",
      "volume": "20",
      "year": "1984",
      "journal-title": "Electron. Lett."
    },
    {
      "key": "2023080505033907200_c5",
      "doi-asserted-by": "publisher",
      "first-page": "4998",
      "DOI": "10.1063/1.332767",
      "volume": "54",
      "year": "1983",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2023080505033907200_c6",
      "doi-asserted-by": "publisher",
      "first-page": "755",
      "DOI": "10.1063/1.93667",
      "volume": "41",
      "year": "1982",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023080505033907200_c7",
      "doi-asserted-by": "publisher",
      "first-page": "2743",
      "DOI": "10.1149/1.2113657",
      "volume": "132",
      "year": "1985",
      "journal-title": "J. Electrochem. Soc."
    },
    {
      "key": "2023080505033907200_c8",
      "doi-asserted-by": "publisher",
      "first-page": "3456",
      "DOI": "10.1063/1.339316",
      "volume": "62",
      "year": "1987",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2023080505033907200_c9",
      "doi-asserted-by": "publisher",
      "first-page": "2033",
      "DOI": "10.1116/1.586539",
      "volume": "11",
      "year": "1993",
      "journal-title": "J. Vac. Sci. Technol. B"
    },
    {
      "key": "2023080505033907200_c10",
      "doi-asserted-by": "publisher",
      "first-page": "7951",
      "DOI": "10.1063/1.459325",
      "volume": "93",
      "year": "1990",
      "journal-title": "J. Chem. Phys."
    },
    {
      "volume-title": "CRC Handbook of Chemistry and Physics",
      "year": "1994",
      "key": "2023080505033907200_c11"
    },
    {
      "key": "2023080505033907200_c12",
      "doi-asserted-by": "publisher",
      "first-page": "76",
      "DOI": "10.1016/S0040-6090(02)00316-4",
      "volume": "412",
      "year": "2002",
      "journal-title": "Thin Solid Films"
    },
    {
      "key": "2023080505033907200_c13",
      "doi-asserted-by": "publisher",
      "first-page": "577",
      "DOI": "10.1016/0039-6028(86)90889-7",
      "volume": "168",
      "year": "1986",
      "journal-title": "Surf. Sci."
    },
    {
      "key": "2023080505033907200_c14",
      "doi-asserted-by": "publisher",
      "first-page": "33",
      "DOI": "10.1016/S0040-6090(99)00959-1",
      "volume": "364",
      "year": "2000",
      "journal-title": "Thin Solid Films"
    },
    {
      "key": "2023080505033907200_c15",
      "doi-asserted-by": "crossref",
      "first-page": "56",
      "DOI": "10.1016/S0022-0248(02)02312-6",
      "volume": "251",
      "year": "2003",
      "journal-title": "J. Cryst. Growth"
    },
    {
      "key": "2023080505033907200_c16",
      "doi-asserted-by": "publisher",
      "first-page": "4966",
      "DOI": "10.1103/PhysRevB.56.4966",
      "volume": "56",
      "year": "1997",
      "journal-title": "Phys. Rev. B"
    },
    {
      "key": "2023080505033907200_c17",
      "doi-asserted-by": "publisher",
      "first-page": "159",
      "DOI": "10.1016/S0040-6090(00)01126-3",
      "volume": "373",
      "year": "2000",
      "journal-title": "Thin Solid Films"
    },
    {
      "key": "2023080505033907200_c18",
      "doi-asserted-by": "publisher",
      "first-page": "13",
      "DOI": "10.1002/sia.740070104",
      "volume": "7",
      "year": "1985",
      "journal-title": "Surf. Interface Anal."
    },
    {
      "key": "2023080505033907200_c19",
      "doi-asserted-by": "crossref",
      "first-page": "1247",
      "DOI": "10.1098/rsta.2004.1377",
      "volume": "362",
      "year": "2004",
      "journal-title": "Philos. Trans. R. Soc. London, Ser. A"
    },
    {
      "key": "2023080505033907200_c20"
    },
    {
      "key": "2023080505033907200_c21",
      "doi-asserted-by": "publisher",
      "first-page": "L721",
      "DOI": "10.1143/JJAP.31.L721",
      "volume": "31",
      "year": "1992",
      "journal-title": "Jpn. J. Appl. Phys., Part 2"
    },
    {
      "key": "2023080505033907200_c22",
      "doi-asserted-by": "publisher",
      "first-page": "966",
      "DOI": "10.1016/0022-0248(93)90769-S",
      "volume": "127",
      "year": "1993",
      "journal-title": "J. Cryst. Growth"
    },
    {
      "key": "2023080505033907200_c23",
      "doi-asserted-by": "publisher",
      "first-page": "L914",
      "DOI": "10.1016/0039-6028(95)80057-3",
      "volume": "339",
      "year": "1995",
      "journal-title": "Surf. Sci."
    },
    {
      "key": "2023080505033907200_c24",
      "doi-asserted-by": "publisher",
      "first-page": "3282",
      "DOI": "10.1063/1.105706",
      "volume": "59",
      "year": "1991",
      "journal-title": "Appl. Phys. Lett."
    }
  ],
  "container-title": "Journal of Applied Physics",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://pubs.aip.org/aip/jap/article-pdf/doi/10.1063/1.2740359/14997168/114321_1_online.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://pubs.aip.org/aip/jap/article-pdf/doi/10.1063/1.2740359/14997168/114321_1_online.pdf",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2023,
        8,
        5
      ]
    ],
    "date-time": "2023-08-05T05:05:29Z",
    "timestamp": 1691211929000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://pubs.aip.org/jap/article/101/11/114321/988026/The-role-of-proximity-caps-during-the-annealing-of"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        2007,
        6,
        1
      ]
    ]
  },
  "references-count": 24,
  "journal-issue": {
    "issue": "11",
    "published-print": {
      "date-parts": [
        [
          2007,
          6,
          1
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1063/1.2740359",
  "relation": {},
  "ISSN": [
    "0021-8979",
    "1089-7550"
  ],
  "subject": [],
  "published-other": {
    "date-parts": [
      [
        2007,
        6,
        1
      ]
    ]
  },
  "published": {
    "date-parts": [
      [
        2007,
        6,
        1
      ]
    ]
  },
  "article-number": "114321"
}