DOI: 10.1063/1.2723684. Fabrication of GeO2 layers using a divalent Ge precursor

Fabrication of GeO2 layers using a divalent Ge precursor

10.1063/1.2723684

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Good quality and perfectly stoichiometric GeO2 layers are promising interlayers to be implemented in alternative devices based on high dielectric constant oxide/Ge(100). In this work, the authors report on the growth by atomic layer deposition of GeO2 films using a divalent Ge precursor combined with O3. The films are composed of smooth and perfectly stoichiometric GeO2. The contamination level is extremely low. The deposited GeO2 films have a band gap of 5.81±0.04eV. The conduction and valence band offsets at the GeO2∕Ge heterojunction are found to be 0.6±0.1 and 4.5±0.1eV, respectively.

Bibliography

Perego, M., Scarel, G., Fanciulli, M., Fedushkin, I. L., & Skatova, A. A. (2007). Fabrication of GeO2 layers using a divalent Ge precursor. Applied Physics Letters, 90(16).

Authors 5

M. Perego (first)
G. Scarel (additional)
M. Fanciulli (additional)
I. L. Fedushkin (additional)
A. A. Skatova (additional)

References 19 Referenced 84

10.1016/S1369-7021(06)71495-X / Mater. Today (2006)
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10.1063/1.2042631 / Appl. Phys. Lett. (2005)
10.1109/TED.2006.875812 / IEEE Trans. Electron Devices (2006)
10.1016/0039-6028(94)00746-2 / Surf. Sci. (1995)
10.1063/1.2337543 / Appl. Phys. Lett. (2006)
10.1021/om0497846 / Organometallics (2004)
10.1063/1.2162699 / Appl. Phys. Lett. (2006)
10.1103/PhysRevB.36.9569 / Phys. Rev. B (1987)
10.1016/0039-6028(86)90767-3 / Surf. Sci. (1986)
10.1016/S0039-6028(02)02354-3 / Surf. Sci. (2003)
10.1063/1.2360388 / J. Appl. Phys. (2006)
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10.1103/PhysRevLett.44.1620 / Phys. Rev. Lett. (1980)
10.1116/1.1768525 / J. Vac. Sci. Technol. B (2004)
10.1103/PhysRevB.37.8383 / Phys. Rev. B (1988)
10.1103/PhysRevB.15.3193 / Phys. Rev. B (1977)
10.1016/S0039-6028(99)00866-3 / Surf. Sci. (1999)
10.1380/ejssnt.2006.174 / e-J. Surf. Sci. Nanotechnol. (2006)

Dates

Type	When
Created	18 years, 4 months ago (April 20, 2007, 6:09 p.m.)
Deposited	2 years, 2 months ago (June 30, 2023, 7:46 p.m.)
Indexed	3 weeks, 1 day ago (Aug. 12, 2025, 6:14 p.m.)
Issued	18 years, 4 months ago (April 16, 2007)
Published	18 years, 4 months ago (April 16, 2007)
Published Online	18 years, 4 months ago (April 20, 2007)
Published Print	18 years, 4 months ago (April 16, 2007)

Funders 0

None

BibTeX

@article{Perego_2007, title={Fabrication of GeO2 layers using a divalent Ge precursor}, volume={90}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.2723684}, DOI={10.1063/1.2723684}, number={16}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Perego, M. and Scarel, G. and Fanciulli, M. and Fedushkin, I. L. and Skatova, A. A.}, year={2007}, month=apr }

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