Abstract
Polycrystalline Ba1−xSrxTiO3 (BST) thin films with three different compositions have been deposited by radio-frequency magnetron sputtering technique on platinum coated silicon substrates. Samples with buffer and barrier layers for different film thicknesses and processing temperatures have been studied. Crystallite size of BST films has been found to increase with increasing substrate temperature. Thickness dependent dielectric constant has been studied and discussed in the light of an interfacial dead layer and the finite screening length of the electrode. Ferroelectric properties of the films have also been studied for various deposition conditions. The electrical resistivity of the films measured at different temperatures shows a positive temperature coefficient of resistance under a constant bias voltage.
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Dates
Type | When |
---|---|
Created | 18 years, 5 months ago (March 29, 2007, 6:03 p.m.) |
Deposited | 2 years ago (Aug. 7, 2023, 3:10 a.m.) |
Indexed | 1 month ago (July 30, 2025, 6:48 a.m.) |
Issued | 18 years, 5 months ago (March 15, 2007) |
Published | 18 years, 5 months ago (March 15, 2007) |
Published Online | 18 years, 5 months ago (March 29, 2007) |
Published Print | 18 years, 5 months ago (March 15, 2007) |
@article{Panda_2007, title={Thickness and temperature dependent electrical characteristics of crystalline BaxSr1−xTiO3 thin films}, volume={101}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.2714769}, DOI={10.1063/1.2714769}, number={6}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Panda, B. and Roy, A. and Dhar, A. and Ray, S. K.}, year={2007}, month=mar }