DOI: 10.1063/1.2712772. Photoluminescence properties of a single GaN nanorod with GaN∕AlGaN multilayer quantum disks

Photoluminescence properties of a single GaN nanorod with GaN∕AlGaN multilayer quantum disks

10.1063/1.2712772

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Photoluminescence (PL) properties of a single nanorod containing multiple GaN quantum disks separated by AlGaN potential barriers are investigated using micro-PL spectroscopy. Previous studies reported ensemble spectra from many nanorods. The PL spectra show different features depending on the region of the nanorod excited by the laser, including a sharp feature originating from the quantum disk region. The distinct differences between the PL from the different regions are discussed. The results imply that excitons are strongly confined in the quantum disks, and the authors suggest that small quantum disks can be regarded as quantum dots having a discrete density of states.

Bibliography

Yi, S. N., Na, J. H., Lee, K. H., Jarjour, A. F., Taylor, R. A., Park, Y. S., Kang, T. W., Kim, S., Ha, D. H., Andrew, G., & Briggs, D. (2007). Photoluminescence properties of a single GaN nanorod with GaNâAlGaN multilayer quantum disks. Applied Physics Letters, 90(10).

Authors 11

S. N. Yi (first)
Jong H. Na (additional)
Kwan H. Lee (additional)
Anas F. Jarjour (additional)
Robert A. Taylor (additional)
Y. S. Park (additional)
T. W. Kang (additional)
S. Kim (additional)
D. H. Ha (additional)
G. Andrew (additional)
D. Briggs (additional)

References 19 Referenced 20

10.1143/JJAP.34.L797 / Jpn. J. Appl. Phys., Part 2 (1995)
10.1016/S0038-1098(98)00209-9 / Solid State Commun. (1998)
10.1063/1.124409 / Appl. Phys. Lett. (1998)
10.1103/PhysRevB.62.16826 / Phys. Rev. B (2000)
10.1063/1.1605231 / Appl. Phys. Lett. (2003)
10.1103/PhysRevB.68.125305 / Phys. Rev. B (2003)
10.1016/j.jcrysgro.2005.05.058 / J. Cryst. Growth (2005)
10.1063/1.1887821 / Appl. Phys. Lett. (2005)
10.1016/j.jcrysgro.2005.11.073 / J. Cryst. Growth (2006)
10.1016/S0022-0248(98)00188-2 / J. Cryst. Growth (1998)
10.1063/1.1784524 / Appl. Phys. Lett. (2004)
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10.1063/1.2220482 / Appl. Phys. Lett. (2006)
10.1063/1.1868072 / Appl. Phys. Lett. (2005)
10.1080/00018730010006608 / Adv. Phys. (2001)
10.1063/1.126346 / Appl. Phys. Lett. (2000)
10.1016/j.physe.2003.11.022 / Physica E (Amsterdam) (2004)

Dates

Type	When
Created	18 years, 5 months ago (March 5, 2007, 5:57 p.m.)
Deposited	2 years, 1 month ago (July 3, 2023, 12:09 a.m.)
Indexed	1 month ago (July 30, 2025, 6:47 a.m.)
Issued	18 years, 5 months ago (March 5, 2007)
Published	18 years, 5 months ago (March 5, 2007)
Published Online	18 years, 5 months ago (March 5, 2007)
Published Print	18 years, 5 months ago (March 5, 2007)

Funders 0

None

BibTeX

@article{Yi_2007, title={Photoluminescence properties of a single GaN nanorod with GaN∕AlGaN multilayer quantum disks}, volume={90}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.2712772}, DOI={10.1063/1.2712772}, number={10}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Yi, S. N. and Na, Jong H. and Lee, Kwan H. and Jarjour, Anas F. and Taylor, Robert A. and Park, Y. S. and Kang, T. W. and Kim, S. and Ha, D. H. and Andrew, G. and Briggs, D.}, year={2007}, month=mar }

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