DOI: 10.1063/1.2450656. Irreversible modification of Ge2Sb2Te5 phase change material by nanometer-thin Ti adhesion layers in a device-compatible stack

Irreversible modification of Ge2Sb2Te5 phase change material by nanometer-thin Ti adhesion layers in a device-compatible stack

10.1063/1.2450656

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

The authors report on an interaction between chalcogenide phase-change material Ge2Sb2Te5 and a thin Ti adhesion layer considered for integration into a structure of a memory cell. Segregation of Te atoms in the chalcogenide film to the interface drives an interaction between Ti and Te atoms and formation of Ti–Te binary phases. This reaction has distinct signatures in the film-stack stress even for a nanometer-thin Ti layer. The irreversible Te segregation and modification of Ge2Sb2Te5 change the crystallization process, completely suppressing the final transformation into an otherwise stable hcp phase, and thus impacts the ultimate life cycle of such a phase-change based memory cell.

Bibliography

Cabral, C., Chen, K. N., Krusin-Elbaum, L., & Deline, V. (2007). Irreversible modification of Ge2Sb2Te5 phase change material by nanometer-thin Ti adhesion layers in a device-compatible stack. Applied Physics Letters, 90(5).

Authors 4

C. Cabral (first)
K. N. Chen (additional)
L. Krusin-Elbaum (additional)
V. Deline (additional)

References 17 Referenced 76

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Dates

Type	When
Created	18 years, 6 months ago (Feb. 2, 2007, 2:26 p.m.)
Deposited	2 years, 1 month ago (July 2, 2023, 11:24 a.m.)
Indexed	4 weeks, 2 days ago (July 30, 2025, 6:48 a.m.)
Issued	18 years, 7 months ago (Jan. 29, 2007)
Published	18 years, 7 months ago (Jan. 29, 2007)
Published Online	18 years, 6 months ago (Jan. 30, 2007)
Published Print	18 years, 7 months ago (Jan. 29, 2007)

Funders 0

None

BibTeX

@article{Cabral_2007, title={Irreversible modification of Ge2Sb2Te5 phase change material by nanometer-thin Ti adhesion layers in a device-compatible stack}, volume={90}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.2450656}, DOI={10.1063/1.2450656}, number={5}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Cabral, C. and Chen, K. N. and Krusin-Elbaum, L. and Deline, V.}, year={2007}, month=jan }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        7,
        30
      ]
    ],
    "date-time": "2025-07-30T10:48:40Z",
    "timestamp": 1753872520719,
    "version": "3.41.2"
  },
  "reference-count": 17,
  "publisher": "AIP Publishing",
  "issue": "5",
  "content-domain": {
    "domain": [
      "pubs.aip.org"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        2007,
        1,
        29
      ]
    ]
  },
  "abstract": "<jats:p>The authors report on an interaction between chalcogenide phase-change material Ge2Sb2Te5 and a thin Ti adhesion layer considered for integration into a structure of a memory cell. Segregation of Te atoms in the chalcogenide film to the interface drives an interaction between Ti and Te atoms and formation of Ti\u2013Te binary phases. This reaction has distinct signatures in the film-stack stress even for a nanometer-thin Ti layer. The irreversible Te segregation and modification of Ge2Sb2Te5 change the crystallization process, completely suppressing the final transformation into an otherwise stable hcp phase, and thus impacts the ultimate life cycle of such a phase-change based memory cell.</jats:p>",
  "DOI": "10.1063/1.2450656",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2007,
        2,
        2
      ]
    ],
    "date-time": "2007-02-02T19:26:57Z",
    "timestamp": 1170444417000
  },
  "update-policy": "https://doi.org/10.1063/aip-crossmark-policy-page",
  "source": "Crossref",
  "is-referenced-by-count": 76,
  "title": "Irreversible modification of Ge2Sb2Te5 phase change material by nanometer-thin Ti adhesion layers in a device-compatible stack",
  "prefix": "10.1063",
  "volume": "90",
  "author": [
    {
      "suffix": "Jr.",
      "given": "C.",
      "family": "Cabral",
      "sequence": "first",
      "affiliation": [
        {
          "name": "IBM T. J. Watson Research Center , Yorktown Heights, New York 10598"
        }
      ]
    },
    {
      "given": "K. N.",
      "family": "Chen",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "IBM T. J. Watson Research Center , Yorktown Heights, New York 10598"
        }
      ]
    },
    {
      "given": "L.",
      "family": "Krusin-Elbaum",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "IBM T. J. Watson Research Center , Yorktown Heights, New York 10598"
        }
      ]
    },
    {
      "given": "V.",
      "family": "Deline",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "IBM Almaden Research Center , San Jose, California 95120"
        }
      ]
    }
  ],
  "member": "317",
  "published-online": {
    "date-parts": [
      [
        2007,
        1,
        30
      ]
    ]
  },
  "reference": [
    {
      "first-page": "158",
      "volume-title": "Proceedings of the 2002 IEEE International Solid State Circuits Conference",
      "year": "2002",
      "key": "2023070215242553100_c1"
    },
    {
      "first-page": "576",
      "volume-title": "Proceedings of the 2005 IEEE International Solid State Circuits Conference",
      "year": "2005",
      "key": "2023070215242553100_c2"
    },
    {
      "key": "2023070215242553100_c3a",
      "doi-asserted-by": "publisher",
      "first-page": "1450",
      "DOI": "10.1103/PhysRevLett.21.1450",
      "volume": "21",
      "year": "1968",
      "journal-title": "Phys. Rev. Lett."
    },
    {
      "key": "2023070215242553100_c3b",
      "doi-asserted-by": "publisher",
      "first-page": "99",
      "DOI": "10.1016/0022-3093(70)90125-0",
      "volume": "2",
      "year": "1970",
      "journal-title": "J. Non-Cryst. Solids"
    },
    {
      "key": "2023070215242553100_c4",
      "doi-asserted-by": "publisher",
      "first-page": "684",
      "DOI": "10.1109/LED.2004.836032",
      "volume": "25",
      "year": "2005",
      "journal-title": "IEEE Electron Device Lett."
    },
    {
      "key": "2023070215242553100_c5",
      "doi-asserted-by": "crossref",
      "first-page": "347",
      "DOI": "10.1038/nmat1350",
      "volume": "4",
      "year": "2005",
      "journal-title": "Nat. Mater."
    },
    {
      "key": "2023070215242553100_c6",
      "doi-asserted-by": "publisher",
      "first-page": "714",
      "DOI": "10.1109/TED.2004.825805",
      "volume": "51",
      "year": "2004",
      "journal-title": "IEEE Trans. Electron Devices"
    },
    {
      "key": "2023070215242553100_c7",
      "doi-asserted-by": "publisher",
      "first-page": "3597",
      "DOI": "10.1063/1.1415419",
      "volume": "79",
      "year": "2001",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023070215242553100_c8",
      "doi-asserted-by": "publisher",
      "first-page": "230",
      "DOI": "10.1116/1.1430249",
      "volume": "20",
      "year": "2002",
      "journal-title": "J. Vac. Sci. Technol. A"
    },
    {
      "first-page": "255",
      "volume-title": "Proceedings of the 2003 IEEE International Electron Devices Meeting",
      "year": "2003",
      "key": "2023070215242553100_c9"
    },
    {
      "key": "2023070215242553100_c10",
      "unstructured": "L.\u2008Krusin-Elbaum, C.\u2008Cabral, Jr., K. N.\u2008Chen, M.\u2008Copel, D. W.\u2008Abraham, K. B.\u2008Reuter, S.\u2008Rossnagel, and V.\u2008Deline, report (in press)."
    },
    {
      "key": "2023070215242553100_c11",
      "doi-asserted-by": "publisher",
      "first-page": "197",
      "DOI": "10.1016/0925-8388(94)01272-J",
      "volume": "216",
      "year": "1994",
      "journal-title": "J. Alloys Compd."
    },
    {
      "key": "2023070215242553100_c12",
      "doi-asserted-by": "crossref",
      "first-page": "373",
      "DOI": "10.1007/BF02665574",
      "volume": "17",
      "year": "1996",
      "journal-title": "J. Phase Equilib."
    },
    {
      "key": "2023070215242553100_c13",
      "first-page": "1914",
      "volume": "6",
      "year": "1966",
      "journal-title": "J. Phys. Chem."
    },
    {
      "key": "2023070215242553100_c14",
      "first-page": "613",
      "volume": "84",
      "year": "1993",
      "journal-title": "Z. Metallkd."
    },
    {
      "key": "2023070215242553100_c15",
      "first-page": "315",
      "volume-title": "Materials Thermochemistry",
      "year": "1993",
      "edition": "6th"
    },
    {
      "key": "2023070215242553100_c16",
      "first-page": "118",
      "volume": "6",
      "year": "1995",
      "journal-title": "J. Mater. Sci.: Mater. Electron."
    }
  ],
  "container-title": "Applied Physics Letters",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/1.2450656/14027156/051908_1_online.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/1.2450656/14027156/051908_1_online.pdf",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2023,
        7,
        2
      ]
    ],
    "date-time": "2023-07-02T15:24:34Z",
    "timestamp": 1688311474000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://pubs.aip.org/apl/article/90/5/051908/334126/Irreversible-modification-of-Ge2Sb2Te5-phase"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        2007,
        1,
        29
      ]
    ]
  },
  "references-count": 17,
  "journal-issue": {
    "issue": "5",
    "published-print": {
      "date-parts": [
        [
          2007,
          1,
          29
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1063/1.2450656",
  "relation": {},
  "ISSN": [
    "0003-6951",
    "1077-3118"
  ],
  "subject": [],
  "published-other": {
    "date-parts": [
      [
        2007,
        1,
        29
      ]
    ]
  },
  "published": {
    "date-parts": [
      [
        2007,
        1,
        29
      ]
    ]
  },
  "article-number": "051908"
}