Crossref journal-article
AIP Publishing
Applied Physics Letters (317)
Abstract

Hall effect, photoluminescence, and Schottky diode measurements were made on the Zn-polar and O-polar faces of undoped, bulk, single crystal, c-axis ZnO wafers. Significant polarity related differences were observed in the PL and Schottky diode characteristics of low carrier concentration, hydrothermally grown wafers. Increased emission from free exciton recombinations and from recombinations between 3.3725 and 3.3750eV was observed on the Zn-polar face. Conversely, emission between 3.3640 and 3.3680eV was more intense on the O-polar face. The barrier heights of silver oxide Schottky diodes were approximately 130meV larger on the Zn-polar face compared to the O-polar face.

Bibliography

Allen, M. W., Miller, P., Reeves, R. J., & Durbin, S. M. (2007). Influence of spontaneous polarization on the electrical and optical properties of bulk, single crystal ZnO. Applied Physics Letters, 90(6).

Authors 4
  1. M. W. Allen (first)
  2. P. Miller (additional)
  3. R. J. Reeves (additional)
  4. S. M. Durbin (additional)
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Dates
Type When
Created 18 years, 6 months ago (Feb. 5, 2007, 6 p.m.)
Deposited 2 years, 1 month ago (July 2, 2023, 5:43 p.m.)
Indexed 1 week, 2 days ago (Aug. 21, 2025, 12:30 p.m.)
Issued 18 years, 6 months ago (Feb. 5, 2007)
Published 18 years, 6 months ago (Feb. 5, 2007)
Published Online 18 years, 6 months ago (Feb. 5, 2007)
Published Print 18 years, 6 months ago (Feb. 5, 2007)
Funders 0

None

@article{Allen_2007, title={Influence of spontaneous polarization on the electrical and optical properties of bulk, single crystal ZnO}, volume={90}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.2450642}, DOI={10.1063/1.2450642}, number={6}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Allen, M. W. and Miller, P. and Reeves, R. J. and Durbin, S. M.}, year={2007}, month=feb }