Abstract
n -type organic thin-film transistors based on a thiazolothiazole derivative were fabricated on a SiO2 gate insulator treated with n-alkyl self-assembled monolayers (SAMs), which were composed of various alkyl chain lengths. The field-effect electron mobility increased depending on the alkyl chain length of the SAMs. A long alkyl chain significantly improved the on current and electron mobility. The highest electron mobility of 1.2cm2∕Vs and on/off ratio of 107 were achieved with an alkyl chain longer than that of tetradecyl-trichlorosilane. This result is attributed to the suppression of the influence of electron trap sites on the SiO2 gate insulator by employing the SAM with the long alkyl chain.
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Dates
Type | When |
---|---|
Created | 18 years, 6 months ago (Feb. 3, 2007, 1:30 a.m.) |
Deposited | 2 years, 1 month ago (July 3, 2023, 12:38 a.m.) |
Indexed | 3 weeks, 5 days ago (July 30, 2025, 6:48 a.m.) |
Issued | 18 years, 6 months ago (Jan. 29, 2007) |
Published | 18 years, 6 months ago (Jan. 29, 2007) |
Published Online | 18 years, 6 months ago (Feb. 1, 2007) |
Published Print | 18 years, 6 months ago (Jan. 29, 2007) |
@article{Kumaki_2007, title={Significant improvement of electron mobility in organic thin-film transistors based on thiazolothiazole derivative by employing self-assembled monolayer}, volume={90}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.2436641}, DOI={10.1063/1.2436641}, number={5}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Kumaki, Daisuke and Ando, Shinji and Shimono, Satoshi and Yamashita, Yoshiro and Umeda, Tokiyoshi and Tokito, Shizuo}, year={2007}, month=jan }