DOI: 10.1063/1.2435799. Investigation of the thermal boundary resistance at the III-Nitride/substrate interface using optical methods

Investigation of the thermal boundary resistance at the III-Nitride/substrate interface using optical methods

10.1063/1.2435799

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

Heat removal from III-Nitride-based devices into a substrate depends also on an acoustic coupling at III-Nitride/substrate interface. We investigate thermal boundary resistance (TBR) and its effects on temperature distribution for GaN layers on Si, SiC, or sapphire substrates. Micro-Raman method is used for the investigation of TBR at the GaN/Si interface while the transient interferometric mapping (TIM) method is used for investigation of GaN/SiC and GaN/sapphire systems. Thermal modeling is used to analyze the experimental data. We found TBR to be ∼7×10−8 m2 K/W for GaN/Si and ∼1.2×10−7 m2 K/W for GaN/SiC interfaces. The role of TBR at the GaN/sapphire interface in the poor heat transfer from GaN to substrate is found to be less important. It is suggested that the substrate cooling efficiency may be improved if fewer defects are present at the interface to the GaN epistructure.

Bibliography

KuzmÃk, J., Bychikhin, S., Pogany, D., GaquiÃ¨re, C., Pichonat, E., & Morvan, E. (2007). Investigation of the thermal boundary resistance at the III-Nitride/substrate interface using optical methods. Journal of Applied Physics, 101(5).

Authors 6

J. Kuzmík (first)
S. Bychikhin (additional)
D. Pogany (additional)
C. Gaquière (additional)
E. Pichonat (additional)
E. Morvan (additional)

References 21 Referenced 56

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{'first-page': '21', 'volume-title': 'Nitride Semiconductors and Devices', 'year': '1999', 'key': '2023070423274266100_c14'} / Nitride Semiconductors and Devices (1999)
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Dates

Type	When
Created	18 years, 5 months ago (March 8, 2007, 10:40 a.m.)
Deposited	2 years, 1 month ago (July 5, 2023, 9:04 a.m.)
Indexed	3 weeks, 1 day ago (Aug. 7, 2025, 5:04 p.m.)
Issued	18 years, 5 months ago (March 1, 2007)
Published	18 years, 5 months ago (March 1, 2007)
Published Online	18 years, 5 months ago (March 7, 2007)
Published Print	18 years, 5 months ago (March 1, 2007)

Funders 0

None

BibTeX

@article{Kuzm_k_2007, title={Investigation of the thermal boundary resistance at the III-Nitride/substrate interface using optical methods}, volume={101}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.2435799}, DOI={10.1063/1.2435799}, number={5}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Kuzmík, J. and Bychikhin, S. and Pogany, D. and Gaquière, C. and Pichonat, E. and Morvan, E.}, year={2007}, month=mar }

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