Abstract
Epitaxial Ba0.15Zr0.85TiO3 (BZT) ferroelectric thin films with (001), (011), and (111) orientations were, respectively, grown on La0.67Sr0.33MnO3 (LSMO) buffered LaAlO3 substrates by pulsed laser deposition method. The dc electric-field dependence of permittivity and dielectric loss of (001)-, (011)-, and (111)-oriented BZT/LSMO heterostructures obeys the Johnson formula, and the ac electric-field dependence of that obeys the Rayleigh law under the subswitching field region. The anisotropic dielectric properties are attributed to the higher mobility of the charge carriers, the concentration of mobile interfacial domain walls, and boundaries in the (111)-oriental films than in the (110)- and (100)-oriented films.
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Dates
Type | When |
---|---|
Created | 18 years, 7 months ago (Jan. 9, 2007, 6:29 p.m.) |
Deposited | 2 years, 2 months ago (July 2, 2023, 11:59 p.m.) |
Indexed | 3 days, 4 hours ago (Sept. 3, 2025, 6:10 a.m.) |
Issued | 18 years, 7 months ago (Jan. 8, 2007) |
Published | 18 years, 7 months ago (Jan. 8, 2007) |
Published Online | 18 years, 7 months ago (Jan. 9, 2007) |
Published Print | 18 years, 7 months ago (Jan. 8, 2007) |
@article{Miao_2007, title={Crystal orientation dependence of the dielectric properties for epitaxial BaZr0.15Ti0.85O3 thin films}, volume={90}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.2431575}, DOI={10.1063/1.2431575}, number={2}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Miao, J. and Yuan, J. and Wu, H. and Yang, S. B. and Xu, B. and Cao, L. X. and Zhao, B. R.}, year={2007}, month=jan }