DOI: 10.1063/1.2430481. Nonvolatile switching characteristics of laser-ablated Ge2Sb2Te5 nanoparticles for phase-change memory applications

Nonvolatile switching characteristics of laser-ablated Ge2Sb2Te5 nanoparticles for phase-change memory applications

10.1063/1.2430481

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Electrical characteristics of Ge2Sb2Te5 (GST) nanoparticles have been examined for a phase-change memory applications. The GST nanoparticles were generated by in situ pulsed laser ablation and their crystal structure formation was confirmed [H. R. Yoon et al., J. Non-Cryst. Solids 351, 3430 (2005)]. A stacked structure of the GST nanoparticles with 10nm of average diameter shows reversible nonvolatile switching characteristics between a high resistance state and a low resistance state as in the phase-change memory consisting of bulk GST thin film. Experimental results indicate that it is highly probable to test scaling issues of the phase-change memory with well-defined GST nanoparticles.

Bibliography

Suh, D.-S., Lee, E., Kim, K. H. P., Noh, J.-S., Shin, W.-C., Kang, Y.-S., Kim, C., Khang, Y., Yoon, H. R., & Jo, W. (2007). Nonvolatile switching characteristics of laser-ablated Ge2Sb2Te5 nanoparticles for phase-change memory applications. Applied Physics Letters, 90(2).

Authors 10

Dong-Seok Suh (first)
Eunhye Lee (additional)
Kijoon H. P. Kim (additional)
Jin-Seo Noh (additional)
Woong-Chul Shin (additional)
Youn-Seon Kang (additional)
Cheolkyu Kim (additional)
Yoonho Khang (additional)
H. R. Yoon (additional)
W. Jo (additional)

References 16 Referenced 23

10.1109/JPROC.2003.811702 / Proc. IEEE (2003)
{'year': '2005', 'key': '2023070304023870200_c2', 'first-page': '423'} (2005)
{'volume': '2004', 'journal-title': 'Tech. Dig. - Int. Electron Devices Meet.', 'first-page': '567', 'key': '2023070304023870200_c3'} / Tech. Dig. - Int. Electron Devices Meet.
{'volume': '2003', 'journal-title': 'Tech. Dig. - Int. Electron Devices Meet.', 'first-page': '10', 'key': '2023070304023870200_c4'} / Tech. Dig. - Int. Electron Devices Meet.
10.1038/nmat1215 / Nat. Mater. (2004)
10.1038/nmat1539 / Nat. Mater. (2006)
{'key': '2023070304023870200_c7', 'first-page': '2289', 'volume': '5', 'year': '2001', 'journal-title': 'Proc. IEEE Aerosp. Conf.'} / Proc. IEEE Aerosp. Conf. (2001)
{'volume': '2004', 'journal-title': 'Tech. Dig. - Int. Electron Devices Meet.', 'first-page': '911', 'key': '2023070304023870200_c8'} / Tech. Dig. - Int. Electron Devices Meet.
{'volume': '2003', 'journal-title': 'Tech. Dig. VLSI Symp.', 'first-page': '175', 'key': '2023070304023870200_c9'} / Tech. Dig. VLSI Symp.
{'volume': '2004', 'journal-title': 'Tech. Dig. VLSI Symp.', 'first-page': '18', 'key': '2023070304023870200_c10'} / Tech. Dig. VLSI Symp.
{'volume': '2005', 'journal-title': 'Tech. Dig. VLSI Symp.', 'first-page': '98', 'key': '2023070304023870200_c11'} / Tech. Dig. VLSI Symp.
{'volume': '2003', 'journal-title': 'Tech. Dig. - Int. Electron Devices Meet.', 'first-page': '699', 'key': '2023070304023870200_c12'} / Tech. Dig. - Int. Electron Devices Meet.
10.1016/0079-6425(91)90004-D / Prog. Mater. Sci. (1991)
10.1016/0079-6425(89)90001-7 / Prog. Mater. Sci. (1989)
10.1016/j.jnoncrysol.2005.09.007 / J. Non-Cryst. Solids (2005)
{'first-page': '8', 'volume-title': 'Liquid Semiconductors', 'year': '1977', 'key': '2023070304023870200_c16'} / Liquid Semiconductors (1977)

Dates

Type	When
Created	18 years, 7 months ago (Jan. 8, 2007, 7 p.m.)
Deposited	2 years, 1 month ago (July 3, 2023, 12:02 a.m.)
Indexed	3 weeks, 1 day ago (July 30, 2025, 6:47 a.m.)
Issued	18 years, 7 months ago (Jan. 8, 2007)
Published	18 years, 7 months ago (Jan. 8, 2007)
Published Online	18 years, 7 months ago (Jan. 8, 2007)
Published Print	18 years, 7 months ago (Jan. 8, 2007)

Funders 0

None

BibTeX

@article{Suh_2007, title={Nonvolatile switching characteristics of laser-ablated Ge2Sb2Te5 nanoparticles for phase-change memory applications}, volume={90}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.2430481}, DOI={10.1063/1.2430481}, number={2}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Suh, Dong-Seok and Lee, Eunhye and Kim, Kijoon H. P. and Noh, Jin-Seo and Shin, Woong-Chul and Kang, Youn-Seon and Kim, Cheolkyu and Khang, Yoonho and Yoon, H. R. and Jo, W.}, year={2007}, month=jan }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        7,
        30
      ]
    ],
    "date-time": "2025-07-30T10:47:58Z",
    "timestamp": 1753872478935,
    "version": "3.41.2"
  },
  "reference-count": 16,
  "publisher": "AIP Publishing",
  "issue": "2",
  "content-domain": {
    "domain": [
      "pubs.aip.org"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        2007,
        1,
        8
      ]
    ]
  },
  "abstract": "<jats:p>Electrical characteristics of Ge2Sb2Te5 (GST) nanoparticles have been examined for a phase-change memory applications. The GST nanoparticles were generated by in situ pulsed laser ablation and their crystal structure formation was confirmed [H. R. Yoon et al., J. Non-Cryst. Solids\u2008351, 3430 (2005)]. A stacked structure of the GST nanoparticles with 10nm of average diameter shows reversible nonvolatile switching characteristics between a high resistance state and a low resistance state as in the phase-change memory consisting of bulk GST thin film. Experimental results indicate that it is highly probable to test scaling issues of the phase-change memory with well-defined GST nanoparticles.</jats:p>",
  "DOI": "10.1063/1.2430481",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2007,
        1,
        9
      ]
    ],
    "date-time": "2007-01-09T00:00:56Z",
    "timestamp": 1168300856000
  },
  "update-policy": "https://doi.org/10.1063/aip-crossmark-policy-page",
  "source": "Crossref",
  "is-referenced-by-count": 23,
  "title": "Nonvolatile switching characteristics of laser-ablated Ge2Sb2Te5 nanoparticles for phase-change memory applications",
  "prefix": "10.1063",
  "volume": "90",
  "author": [
    {
      "given": "Dong-Seok",
      "family": "Suh",
      "sequence": "first",
      "affiliation": [
        {
          "name": "Samsung Advanced Institute of Technology Semiconductor Device and Material Lab, , Yongin 446-712, Korea"
        }
      ]
    },
    {
      "given": "Eunhye",
      "family": "Lee",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Samsung Advanced Institute of Technology Semiconductor Device and Material Lab, , Yongin 446-712, Korea"
        }
      ]
    },
    {
      "given": "Kijoon H. P.",
      "family": "Kim",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Samsung Advanced Institute of Technology Semiconductor Device and Material Lab, , Yongin 446-712, Korea"
        }
      ]
    },
    {
      "given": "Jin-Seo",
      "family": "Noh",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Samsung Advanced Institute of Technology Semiconductor Device and Material Lab, , Yongin 446-712, Korea"
        }
      ]
    },
    {
      "given": "Woong-Chul",
      "family": "Shin",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Samsung Advanced Institute of Technology Semiconductor Device and Material Lab, , Yongin 446-712, Korea"
        }
      ]
    },
    {
      "given": "Youn-Seon",
      "family": "Kang",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Samsung Advanced Institute of Technology Semiconductor Device and Material Lab, , Yongin 446-712, Korea"
        }
      ]
    },
    {
      "given": "Cheolkyu",
      "family": "Kim",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Samsung Advanced Institute of Technology Semiconductor Device and Material Lab, , Yongin 446-712, Korea"
        }
      ]
    },
    {
      "given": "Yoonho",
      "family": "Khang",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Samsung Advanced Institute of Technology Semiconductor Device and Material Lab, , Yongin 446-712, Korea"
        }
      ]
    },
    {
      "given": "H. R.",
      "family": "Yoon",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Ewha Womans University Department of Physics and Division of Nanosciences, , Seoul 120-750, Korea"
        }
      ]
    },
    {
      "given": "W.",
      "family": "Jo",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Ewha Womans University Department of Physics and Division of Nanosciences, , Seoul 120-750, Korea"
        }
      ]
    }
  ],
  "member": "317",
  "published-online": {
    "date-parts": [
      [
        2007,
        1,
        8
      ]
    ]
  },
  "reference": [
    {
      "key": "2023070304023870200_c1",
      "doi-asserted-by": "publisher",
      "first-page": "489",
      "DOI": "10.1109/JPROC.2003.811702",
      "volume": "91",
      "year": "2003",
      "journal-title": "Proc. IEEE"
    },
    {
      "year": "2005",
      "key": "2023070304023870200_c2",
      "first-page": "423"
    },
    {
      "volume": "2004",
      "journal-title": "Tech. Dig. - Int. Electron Devices Meet.",
      "first-page": "567",
      "key": "2023070304023870200_c3"
    },
    {
      "volume": "2003",
      "journal-title": "Tech. Dig. - Int. Electron Devices Meet.",
      "first-page": "10",
      "key": "2023070304023870200_c4"
    },
    {
      "key": "2023070304023870200_c5",
      "doi-asserted-by": "publisher",
      "first-page": "703",
      "DOI": "10.1038/nmat1215",
      "volume": "3",
      "year": "2004",
      "journal-title": "Nat. Mater."
    },
    {
      "key": "2023070304023870200_c6",
      "doi-asserted-by": "publisher",
      "first-page": "56",
      "DOI": "10.1038/nmat1539",
      "volume": "5",
      "year": "2006",
      "journal-title": "Nat. Mater."
    },
    {
      "key": "2023070304023870200_c7",
      "first-page": "2289",
      "volume": "5",
      "year": "2001",
      "journal-title": "Proc. IEEE Aerosp. Conf."
    },
    {
      "volume": "2004",
      "journal-title": "Tech. Dig. - Int. Electron Devices Meet.",
      "first-page": "911",
      "key": "2023070304023870200_c8"
    },
    {
      "volume": "2003",
      "journal-title": "Tech. Dig. VLSI Symp.",
      "first-page": "175",
      "key": "2023070304023870200_c9"
    },
    {
      "volume": "2004",
      "journal-title": "Tech. Dig. VLSI Symp.",
      "first-page": "18",
      "key": "2023070304023870200_c10"
    },
    {
      "volume": "2005",
      "journal-title": "Tech. Dig. VLSI Symp.",
      "first-page": "98",
      "key": "2023070304023870200_c11"
    },
    {
      "volume": "2003",
      "journal-title": "Tech. Dig. - Int. Electron Devices Meet.",
      "first-page": "699",
      "key": "2023070304023870200_c12"
    },
    {
      "key": "2023070304023870200_c13",
      "doi-asserted-by": "publisher",
      "first-page": "1",
      "DOI": "10.1016/0079-6425(91)90004-D",
      "volume": "35",
      "year": "1991",
      "journal-title": "Prog. Mater. Sci."
    },
    {
      "key": "2023070304023870200_c14",
      "doi-asserted-by": "publisher",
      "first-page": "223",
      "DOI": "10.1016/0079-6425(89)90001-7",
      "volume": "33",
      "year": "1989",
      "journal-title": "Prog. Mater. Sci."
    },
    {
      "key": "2023070304023870200_c15",
      "doi-asserted-by": "publisher",
      "first-page": "3430",
      "DOI": "10.1016/j.jnoncrysol.2005.09.007",
      "volume": "351",
      "year": "2005",
      "journal-title": "J. Non-Cryst. Solids"
    },
    {
      "first-page": "8",
      "volume-title": "Liquid Semiconductors",
      "year": "1977",
      "key": "2023070304023870200_c16"
    }
  ],
  "container-title": "Applied Physics Letters",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/1.2430481/14023779/023101_1_online.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/1.2430481/14023779/023101_1_online.pdf",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2023,
        7,
        3
      ]
    ],
    "date-time": "2023-07-03T04:02:47Z",
    "timestamp": 1688356967000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://pubs.aip.org/apl/article/90/2/023101/333046/Nonvolatile-switching-characteristics-of-laser"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        2007,
        1,
        8
      ]
    ]
  },
  "references-count": 16,
  "journal-issue": {
    "issue": "2",
    "published-print": {
      "date-parts": [
        [
          2007,
          1,
          8
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1063/1.2430481",
  "relation": {},
  "ISSN": [
    "0003-6951",
    "1077-3118"
  ],
  "subject": [],
  "published-other": {
    "date-parts": [
      [
        2007,
        1,
        8
      ]
    ]
  },
  "published": {
    "date-parts": [
      [
        2007,
        1,
        8
      ]
    ]
  },
  "article-number": "023101"
}