DOI: 10.1063/1.2410241. Fermi-level pinning and charge neutrality level in germanium

Fermi-level pinning and charge neutrality level in germanium

10.1063/1.2410241

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

The Schottky barrier height in metal/Ge contacts shows weak dependence on the metal work function indicating strong Fermi-level pinning close to the Bardeen limit. The pinning factor S is about 0.05 and the charge neutrality level (CNL) is only about 0.09eV above the top of the valence band. Because of this, the Fermi level in Ge lies higher than CNL in most cases of interest so that unpassivated acceptorlike gap states at the interface are easily filled, building up a net negative fixed charge. This could prevent efficient inversion of a p-type Ge surface in a metal-oxide-semiconductor structure.

Bibliography

Dimoulas, A., Tsipas, P., Sotiropoulos, A., & Evangelou, E. K. (2006). Fermi-level pinning and charge neutrality level in germanium. Applied Physics Letters, 89(25).

Authors 4

A. Dimoulas (first)
P. Tsipas (additional)
A. Sotiropoulos (additional)
E. K. Evangelou (additional)

References 29 Referenced 556

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Dates

Type	When
Created	18 years, 8 months ago (Dec. 21, 2006, 10:37 a.m.)
Deposited	2 years ago (Aug. 1, 2023, 1:29 a.m.)
Indexed	2 weeks, 5 days ago (Aug. 6, 2025, 9:55 a.m.)
Issued	18 years, 8 months ago (Dec. 18, 2006)
Published	18 years, 8 months ago (Dec. 18, 2006)
Published Online	18 years, 8 months ago (Dec. 20, 2006)
Published Print	18 years, 8 months ago (Dec. 18, 2006)

Funders 0

None

BibTeX

@article{Dimoulas_2006, title={Fermi-level pinning and charge neutrality level in germanium}, volume={89}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.2410241}, DOI={10.1063/1.2410241}, number={25}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Dimoulas, A. and Tsipas, P. and Sotiropoulos, A. and Evangelou, E. K.}, year={2006}, month=dec }

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