Crossref journal-article
AIP Publishing
Applied Physics Letters (317)
Abstract

The authors study the Au-catalyzed chemical vapor growth of germanium (Ge) nanowires in the presence of phosphine (PH3), used as a dopant precursor. The device characteristics of the ensuing nanowire field effect transistors (FETs) indicate n-type, highly doped nanowires. Using a combination of different nanowire growth sequences and their FET characteristics, the authors determine that phosphorus incorporates predominately via the conformal growth, which accompanies the acicular, nanowire growth. As such, the Ge nanowires grown in the presence of PH3 contain a phosphorus doped shell and an undoped core. The authors determine the doping level in the shell to be ≃(1−4)×1019cm−3.

Bibliography

Tutuc, E., Chu, J. O., Ott, J. A., & Guha, S. (2006). Doping of germanium nanowires grown in presence of PH3. Applied Physics Letters, 89(26).

Authors 4
  1. E. Tutuc (first)
  2. J. O. Chu (additional)
  3. J. A. Ott (additional)
  4. S. Guha (additional)
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Dates
Type When
Created 18 years, 7 months ago (Dec. 26, 2006, 6:03 p.m.)
Deposited 2 years, 1 month ago (July 2, 2023, 11:32 p.m.)
Indexed 3 weeks, 1 day ago (July 30, 2025, 6:48 a.m.)
Issued 18 years, 7 months ago (Dec. 25, 2006)
Published 18 years, 7 months ago (Dec. 25, 2006)
Published Online 18 years, 7 months ago (Dec. 26, 2006)
Published Print 18 years, 7 months ago (Dec. 25, 2006)
Funders 0

None

@article{Tutuc_2006, title={Doping of germanium nanowires grown in presence of PH3}, volume={89}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.2410238}, DOI={10.1063/1.2410238}, number={26}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Tutuc, E. and Chu, J. O. and Ott, J. A. and Guha, S.}, year={2006}, month=dec }