DOI: 10.1063/1.2410230. High efficiency thin-film CuIn1−xGaxSe2 photovoltaic cells using a Cd1−xZnxS buffer layer

High efficiency thin-film CuIn1−xGaxSe2 photovoltaic cells using a Cd1−xZnxS buffer layer

10.1063/1.2410230

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

The authors have fabricated 19.52% thin-film CuIn1−xGaxSe2 (CIGS)-based photovoltaic devices using single layer chemical bath deposited Cd1−xZnxS (CdZnS) buffer layer. The efficiency equals the world record for any thin-film solar cell and is achieved with reduced optical absorption in the window layer. Using current-voltage, quantum efficiency, and capacitance-voltage measurements, the CIGS/CdZnS device parameters are directly compared with those of CIGS/CdS devices fabricated with equivalent absorbers.

Bibliography

Bhattacharya, R. N., Contreras, M. A., Egaas, B., Noufi, R. N., Kanevce, A., & Sites, J. R. (2006). High efficiency thin-film CuIn1âxGaxSe2 photovoltaic cells using a Cd1âxZnxS buffer layer. Applied Physics Letters, 89(25).

Authors 6

R. N. Bhattacharya (first)
M. A. Contreras (additional)
B. Egaas (additional)
R. N. Noufi (additional)
A. Kanevce (additional)
J. R. Sites (additional)

References 3 Referenced 93

10.1002/pip.626 / Prog. Photovoltaics (2005)
10.1143/JJAP.43.L1475 / Jpn. J. Appl. Phys., Part 2 (2004)
{'year': '2003', 'key': '2023080105203139100_c3'} (2003)

Dates

Type	When
Created	18 years, 8 months ago (Dec. 21, 2006, 10:37 a.m.)
Deposited	2 years, 1 month ago (Aug. 1, 2023, 1:20 a.m.)
Indexed	1 month ago (July 30, 2025, 6:48 a.m.)
Issued	18 years, 8 months ago (Dec. 18, 2006)
Published	18 years, 8 months ago (Dec. 18, 2006)
Published Online	18 years, 8 months ago (Dec. 19, 2006)
Published Print	18 years, 8 months ago (Dec. 18, 2006)

Funders 0

None

BibTeX

@article{Bhattacharya_2006, title={High efficiency thin-film CuIn1âˆ’xGaxSe2 photovoltaic cells using a Cd1âˆ’xZnxS buffer layer}, volume={89}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.2410230}, DOI={10.1063/1.2410230}, number={25}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Bhattacharya, R. N. and Contreras, M. A. and Egaas, B. and Noufi, R. N. and Kanevce, A. and Sites, J. R.}, year={2006}, month=dec }

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