DOI: 10.1063/1.2408660. Observation of molecular nitrogen in N-doped Ge2Sb2Te5

Observation of molecular nitrogen in N-doped Ge2Sb2Te5

10.1063/1.2408660

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Ge 2 Sb 2 Te 5 (GST) film in the crystalline state was nitrogen doped using the reactive sputtering method in order to increase sheet resistance. High-resolution x-ray absorption spectroscopy revealed that molecular nitrogen (N2) existed in the N-doped GST film. This finding implies that both molecular nitrogen and atomic-state nitrogen should be taken into account in understanding the structures of N-doped GST film. The molecular nitrogen is believed to exist at interstitial and vacancy sites, and more likely at grain boundaries.

Bibliography

Kim, K., Park, J.-C., Chung, J.-G., Song, S. A., Jung, M.-C., Lee, Y. M., Shin, H.-J., Kuh, B., Ha, Y., & Noh, J.-S. (2006). Observation of molecular nitrogen in N-doped Ge2Sb2Te5. Applied Physics Letters, 89(24).

Authors 10

Kihong Kim (first)
Ju-Chul Park (additional)
Jae-Gwan Chung (additional)
Se Ahn Song (additional)
Min-Cherl Jung (additional)
Young Mi Lee (additional)
Hyun-Joon Shin (additional)
Bongjin Kuh (additional)
Yongho Ha (additional)
Jin-Seo Noh (additional)

References 15 Referenced 57

10.1038/nmat1359 / Nat. Mater. (2005)
10.1038/nmat1350 / Nat. Mater. (2005)
10.1109/JSSC.2004.837974 / IEEE J. Solid-State Circuits (2005)
10.1143/JJAP.39.745 / Jpn. J. Appl. Phys., Part 1 (2000)
10.1143/JJAP.44.L208 / Jpn. J. Appl. Phys., Part 2 (2005)
10.1016/j.tsf.2004.09.057 / Thin Solid Films (2005)
10.1063/1.1370563 / Rev. Sci. Instrum. (2001)
10.1063/1.2236216 / Appl. Phys. Lett. (2006)
{'volume-title': 'NEXAFS Spectroscopy', 'year': '1992', 'key': '2023071123360670800_c9'} / NEXAFS Spectroscopy (1992)
10.1103/PhysRevA.40.6737 / Phys. Rev. A (1989)
10.1063/1.1851620 / Appl. Phys. Lett. (2005)
10.1016/S0040-6090(99)01090-1 / Thin Solid Films (2000)
10.1063/1.1314323 / J. Appl. Phys. (2000)
10.1063/1.1502915 / J. Appl. Phys. (2002)
10.1103/PhysRevLett.96.055507 / Phys. Rev. Lett. (2006)

Dates

Type	When
Created	18 years, 8 months ago (Dec. 18, 2006, 10:51 a.m.)
Deposited	2 years, 1 month ago (July 11, 2023, 7:36 p.m.)
Indexed	4 weeks ago (July 30, 2025, 6:48 a.m.)
Issued	18 years, 8 months ago (Dec. 11, 2006)
Published	18 years, 8 months ago (Dec. 11, 2006)
Published Online	18 years, 8 months ago (Dec. 15, 2006)
Published Print	18 years, 8 months ago (Dec. 11, 2006)

Funders 0

None

BibTeX

@article{Kim_2006, title={Observation of molecular nitrogen in N-doped Ge2Sb2Te5}, volume={89}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.2408660}, DOI={10.1063/1.2408660}, number={24}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Kim, Kihong and Park, Ju-Chul and Chung, Jae-Gwan and Song, Se Ahn and Jung, Min-Cherl and Lee, Young Mi and Shin, Hyun-Joon and Kuh, Bongjin and Ha, Yongho and Noh, Jin-Seo}, year={2006}, month=dec }

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