DOI: 10.1063/1.2402942. Analytic device model for light-emitting ambipolar organic semiconductor field-effect transistors

Analytic device model for light-emitting ambipolar organic semiconductor field-effect transistors

10.1063/1.2402942

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Recent experiments have demonstrated ambipolar channel conduction and light emission in conjugated polymer field-effect transistors (FETs). Electrons and holes are injected from metal source and drain contacts with different work functions, propagate through the FET channel, and recombine emitting light. The position of maximum light emission is varied by changing the voltages applied to the transistor terminals. Here, we present an analytic device model for ambipolar organic field-effect transistors, based on the gradual channel approximation. Trapping of the injected carriers is found to be important. The model results are in good agreement with the experimental observations.

Bibliography

Smith, D. L., & Ruden, P. P. (2006). Analytic device model for light-emitting ambipolar organic semiconductor field-effect transistors. Applied Physics Letters, 89(23).

Authors 2

D. L. Smith (first)
P. P. Ruden (additional)

References 12 Referenced 22

10.1103/PhysRevLett.91.157406 / Phys. Rev. Lett. (2003)
10.1063/1.1640800 / Appl. Phys. Lett. (2004)
10.1063/1.1898429 / Appl. Phys. Lett. (2005)
10.1063/1.115728 / Appl. Phys. Lett. (1996)
10.1109/16.605477 / IEEE Trans. Electron Devices (1997)
10.1063/1.2149986 / Appl. Phys. Lett. (2005)
10.1038/nmat1537 / Nat. Mater. (2006)
10.1126/science.1081294 / Science (2003)
10.1103/PhysRevLett.93.076803 / Phys. Rev. Lett. (2004)
10.1021/nl049607u / Nano Lett. (2004)
10.1063/1.1957116 / Appl. Phys. Lett. (2005)
10.1063/1.1848186 / Appl. Phys. Lett. (2005)

Dates

Type	When
Created	18 years, 8 months ago (Dec. 12, 2006, 8:10 p.m.)
Deposited	2 years, 2 months ago (June 24, 2023, 2:35 p.m.)
Indexed	4 weeks ago (July 30, 2025, 6:47 a.m.)
Issued	18 years, 8 months ago (Dec. 4, 2006)
Published	18 years, 8 months ago (Dec. 4, 2006)
Published Online	18 years, 8 months ago (Dec. 8, 2006)
Published Print	18 years, 8 months ago (Dec. 4, 2006)

Funders 0

None

BibTeX

@article{Smith_2006, title={Analytic device model for light-emitting ambipolar organic semiconductor field-effect transistors}, volume={89}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.2402942}, DOI={10.1063/1.2402942}, number={23}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Smith, D. L. and Ruden, P. P.}, year={2006}, month=dec }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        7,
        30
      ]
    ],
    "date-time": "2025-07-30T10:47:47Z",
    "timestamp": 1753872467645,
    "version": "3.41.2"
  },
  "reference-count": 12,
  "publisher": "AIP Publishing",
  "issue": "23",
  "content-domain": {
    "domain": [
      "pubs.aip.org"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        2006,
        12,
        4
      ]
    ]
  },
  "abstract": "<jats:p>Recent experiments have demonstrated ambipolar channel conduction and light emission in conjugated polymer field-effect transistors (FETs). Electrons and holes are injected from metal source and drain contacts with different work functions, propagate through the FET channel, and recombine emitting light. The position of maximum light emission is varied by changing the voltages applied to the transistor terminals. Here, we present an analytic device model for ambipolar organic field-effect transistors, based on the gradual channel approximation. Trapping of the injected carriers is found to be important. The model results are in good agreement with the experimental observations.</jats:p>",
  "DOI": "10.1063/1.2402942",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2006,
        12,
        13
      ]
    ],
    "date-time": "2006-12-13T01:10:40Z",
    "timestamp": 1165972240000
  },
  "update-policy": "https://doi.org/10.1063/aip-crossmark-policy-page",
  "source": "Crossref",
  "is-referenced-by-count": 22,
  "title": "Analytic device model for light-emitting ambipolar organic semiconductor field-effect transistors",
  "prefix": "10.1063",
  "volume": "89",
  "author": [
    {
      "given": "D. L.",
      "family": "Smith",
      "sequence": "first",
      "affiliation": [
        {
          "name": "Los Alamos National Laboratory , Los Alamos, New Mexico 87545"
        }
      ]
    },
    {
      "given": "P. P.",
      "family": "Ruden",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "University of Minnesota , Minneapolis, Minnesota 55455"
        }
      ]
    }
  ],
  "member": "317",
  "published-online": {
    "date-parts": [
      [
        2006,
        12,
        8
      ]
    ]
  },
  "reference": [
    {
      "key": "2023062405594238800_c1",
      "doi-asserted-by": "publisher",
      "first-page": "157406",
      "DOI": "10.1103/PhysRevLett.91.157406",
      "volume": "91",
      "year": "2003",
      "journal-title": "Phys. Rev. Lett."
    },
    {
      "key": "2023062405594238800_c2",
      "doi-asserted-by": "publisher",
      "first-page": "428",
      "DOI": "10.1063/1.1640800",
      "volume": "84",
      "year": "2004",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023062405594238800_c3",
      "doi-asserted-by": "publisher",
      "first-page": "141106",
      "DOI": "10.1063/1.1898429",
      "volume": "86",
      "year": "2005",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023062405594238800_c4",
      "doi-asserted-by": "publisher",
      "first-page": "1108",
      "DOI": "10.1063/1.115728",
      "volume": "68",
      "year": "1996",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023062405594238800_c5",
      "doi-asserted-by": "publisher",
      "first-page": "1332",
      "DOI": "10.1109/16.605477",
      "volume": "44",
      "year": "1997",
      "journal-title": "IEEE Trans. Electron Devices"
    },
    {
      "key": "2023062405594238800_c6",
      "doi-asserted-by": "publisher",
      "first-page": "253511",
      "DOI": "10.1063/1.2149986",
      "volume": "87",
      "year": "2005",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023062405594238800_c7",
      "doi-asserted-by": "publisher",
      "first-page": "69",
      "DOI": "10.1038/nmat1537",
      "volume": "5",
      "year": "2006",
      "journal-title": "Nat. Mater."
    },
    {
      "key": "2023062405594238800_c8",
      "doi-asserted-by": "publisher",
      "first-page": "783",
      "DOI": "10.1126/science.1081294",
      "volume": "300",
      "year": "2003",
      "journal-title": "Science"
    },
    {
      "key": "2023062405594238800_c9",
      "doi-asserted-by": "publisher",
      "first-page": "076803",
      "DOI": "10.1103/PhysRevLett.93.076803",
      "volume": "93",
      "year": "2004",
      "journal-title": "Phys. Rev. Lett."
    },
    {
      "key": "2023062405594238800_c10",
      "doi-asserted-by": "publisher",
      "first-page": "1063",
      "DOI": "10.1021/nl049607u",
      "volume": "4",
      "year": "2004",
      "journal-title": "Nano Lett."
    },
    {
      "key": "2023062405594238800_c11",
      "doi-asserted-by": "publisher",
      "first-page": "263108",
      "DOI": "10.1063/1.1957116",
      "volume": "86",
      "year": "2005",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023062405594238800_c12",
      "doi-asserted-by": "publisher",
      "first-page": "023105",
      "DOI": "10.1063/1.1848186",
      "volume": "86",
      "year": "2005",
      "journal-title": "Appl. Phys. Lett."
    }
  ],
  "container-title": "Applied Physics Letters",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/1.2402942/13340109/233519_1_online.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/1.2402942/13340109/233519_1_online.pdf",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2023,
        6,
        24
      ]
    ],
    "date-time": "2023-06-24T18:35:39Z",
    "timestamp": 1687631739000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://pubs.aip.org/apl/article/89/23/233519/144725/Analytic-device-model-for-light-emitting-ambipolar"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        2006,
        12,
        4
      ]
    ]
  },
  "references-count": 12,
  "journal-issue": {
    "issue": "23",
    "published-print": {
      "date-parts": [
        [
          2006,
          12,
          4
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1063/1.2402942",
  "relation": {},
  "ISSN": [
    "0003-6951",
    "1077-3118"
  ],
  "subject": [],
  "published-other": {
    "date-parts": [
      [
        2006,
        12,
        4
      ]
    ]
  },
  "published": {
    "date-parts": [
      [
        2006,
        12,
        4
      ]
    ]
  },
  "article-number": "233519"
}