DOI: 10.1063/1.2400068. Defect induced formation of CoSi2 nanowires by focused ion beam synthesis

Defect induced formation of CoSi2 nanowires by focused ion beam synthesis

10.1063/1.2400068

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Cobalt implantation with a focused ion beam (FIB) was applied to study ion beam synthesis of cobalt disilicide nanowires in silicon. Two mechanisms of CoSi2 nanowire formation were investigated: (a) conventional synthesis by Co++ FIB implantation at elevated temperatures into silicon along in-plane ⟨110⟩ Si crystal direction and subsequent annealing and (b) self-aligned CoSi2 nanowire growth in cobalt supersaturated silicon on FIB-induced defects at room temperature during subsequent annealing. The obtained CoSi2 nanowires are 20–100nm in diameter and several micrometers long.

Bibliography

Akhmadaliev, C., Schmidt, B., & Bischoff, L. (2006). Defect induced formation of CoSi2 nanowires by focused ion beam synthesis. Applied Physics Letters, 89(22).

Authors 3

C. Akhmadaliev (first)
B. Schmidt (additional)
L. Bischoff (additional)

References 19 Referenced 14

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Dates

Type	When
Created	18 years, 8 months ago (Dec. 1, 2006, 6:39 p.m.)
Deposited	2 years, 2 months ago (June 25, 2023, 4:05 p.m.)
Indexed	4 weeks ago (July 30, 2025, 6:48 a.m.)
Issued	18 years, 9 months ago (Nov. 27, 2006)
Published	18 years, 9 months ago (Nov. 27, 2006)
Published Online	18 years, 8 months ago (Dec. 1, 2006)
Published Print	18 years, 9 months ago (Nov. 27, 2006)

Funders 0

None

BibTeX

@article{Akhmadaliev_2006, title={Defect induced formation of CoSi2 nanowires by focused ion beam synthesis}, volume={89}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.2400068}, DOI={10.1063/1.2400068}, number={22}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Akhmadaliev, C. and Schmidt, B. and Bischoff, L.}, year={2006}, month=nov }

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