Crossref journal-article
AIP Publishing
Journal of Applied Physics (317)
Abstract

We demonstrate that the electrostatic polarization of an organic semiconductor (OSC) by a gate dielectric with stored charges and electric fields enables the realization of both threshold voltage tuning and inversion process control of OSC thin-film field-effect transistors (OFETs). As a result, OFETs based on typically unipolar n-channel copper hexadecafluorophthalocyanine semiconductor thin films, deposited on a silicon dioxide quasipermanent charged electret as a gate insulator, show unipolar p-channel “inversion” operation in ambient air and form complementary monolithic, single-semiconductor inverter circuits. The field produced by patterned, grid-controlled negative corona charging and subsequent thermal annealing (before semiconductor deposition) electrostatically induces sufficient positive charges to provide significant hole mobility, ca. 0.011cm2V−1s−1, in response to moderate additional negative gate voltages.

Bibliography

Huang, C., Katz, H. E., & West, J. E. (2006). Organic field-effect inversion-mode transistors and single-component complementary inverters on charged electrets. Journal of Applied Physics, 100(11).

Authors 3
  1. Cheng Huang (first)
  2. Howard E. Katz (additional)
  3. James E. West (additional)
References 37 Referenced 13
  1. {'volume-title': 'Thin-Film Transistors', 'year': '2003', 'key': '2023080405465179400_c1'} / Thin-Film Transistors (2003)
  2. 10.1002/1521-4095(20020116)14:2<99::AID-ADMA99>3.0.CO;2-9 / Adv. Mater. (Weinheim, Ger.) (2002)
  3. 10.1126/science.269.5230.1560 / Science (1995)
  4. {'volume-title': 'Microelectronic Circuits', 'year': '2003', 'key': '2023080405465179400_c4'} / Microelectronic Circuits (2003)
  5. 10.1063/1.1794375 / Appl. Phys. Lett. (2004)
  6. 10.1038/nature03376 / Nature (London) (2005)
  7. 10.1063/1.2045556 / Appl. Phys. Lett. (2005)
  8. 10.1063/1.2106009 / J. Appl. Phys. (2005)
  9. 10.1021/ja045124g / J. Am. Chem. Soc. (2005)
  10. {'volume-title': 'Physics of Semiconductor Devices', 'year': '1981', 'key': '2023080405465179400_c9'} / Physics of Semiconductor Devices (1981)
  11. 10.1002/pssa.200404336 / Phys. Status Solidi A (2004)
  12. 10.1063/1.1984093 / Appl. Phys. Lett. (2005)
  13. 10.1063/1.1899773 / Appl. Phys. Lett. (2005)
  14. {'key': '2023080405465179400_c13', 'volume-title': 'Electrets', 'author': 'Sessler', 'year': '1998', 'edition': '3rd ed.'} / Electrets by Sessler (1998)
  15. {'key': '2023080405465179400_c14', 'volume-title': 'Electrets', 'author': 'Gerhard-Multhaupt', 'year': '1999', 'edition': '3rd ed.'} / Electrets by Gerhard-Multhaupt (1999)
  16. {'key': '2023080405465179400_c15', 'first-page': '08', 'volume': '889', 'year': '2006', 'journal-title': 'Mater. Res. Soc. Symp. Proc.'} / Mater. Res. Soc. Symp. Proc. (2006)
  17. 10.1063/1.1427136 / J. Appl. Phys. (2002)
  18. 10.1021/ja035143a / J. Am. Chem. Soc. (2003)
  19. 10.1109/14.155784 / IEEE Trans. Electr. Insul. (1992)
  20. 10.1063/1.1662300 / J. Appl. Phys. (1973)
  21. {'volume-title': 'Dielectric Phenomena in Solids', 'year': '2004', 'key': '2023080405465179400_c20'} / Dielectric Phenomena in Solids (2004)
  22. 10.1109/14.155785 / IEEE Trans. Electr. Insul. (1992)
  23. 10.1021/ja9727629 / J. Am. Chem. Soc. (1998)
  24. 10.1063/1.1339849 / Appl. Phys. Lett. (2001)
  25. 10.1088/0022-3727/22/5/014 / J. Phys. D (1989)
  26. {'volume-title': 'Adv. Funct. Mater.', 'key': '2023080405465179400_c25'} / Adv. Funct. Mater.
  27. {'year': '2002', 'key': '2023080405465179400_c26', 'first-page': '644'} (2002)
  28. 10.1063/1.354992 / J. Appl. Phys. (1993)
  29. 10.1063/1.1369387 / Appl. Phys. Lett. (2001)
  30. 10.1063/1.1879088 / Appl. Phys. Lett. (2005)
  31. {'key': '2023080405465179400_c30', 'first-page': '08', 'volume': '889', 'year': '2006', 'journal-title': 'Mater. Res. Soc. Symp. Proc.'} / Mater. Res. Soc. Symp. Proc. (2006)
  32. 10.1063/1.342625 / J. Appl. Phys. (1989)
  33. 10.1063/1.350764 / J. Appl. Phys. (1992)
  34. 10.1063/1.338274 / J. Appl. Phys. (1987)
  35. 10.1063/1.1518130 / J. Appl. Phys. (2002)
  36. 10.1063/1.1882769 / J. Appl. Phys. (2005)
  37. 10.1126/science.284.5417.1152 / Science (1999)
Dates
Type When
Created 18 years, 8 months ago (Dec. 10, 2006, 11:55 a.m.)
Deposited 2 years ago (Aug. 4, 2023, 1:47 a.m.)
Indexed 4 weeks, 2 days ago (July 30, 2025, 6:47 a.m.)
Issued 18 years, 8 months ago (Dec. 1, 2006)
Published 18 years, 8 months ago (Dec. 1, 2006)
Published Online 18 years, 8 months ago (Dec. 11, 2006)
Published Print 18 years, 8 months ago (Dec. 1, 2006)
Funders 0

None

@article{Huang_2006, title={Organic field-effect inversion-mode transistors and single-component complementary inverters on charged electrets}, volume={100}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.2388730}, DOI={10.1063/1.2388730}, number={11}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Huang, Cheng and Katz, Howard E. and West, James E.}, year={2006}, month=dec }