Abstract
We demonstrate that the electrostatic polarization of an organic semiconductor (OSC) by a gate dielectric with stored charges and electric fields enables the realization of both threshold voltage tuning and inversion process control of OSC thin-film field-effect transistors (OFETs). As a result, OFETs based on typically unipolar n-channel copper hexadecafluorophthalocyanine semiconductor thin films, deposited on a silicon dioxide quasipermanent charged electret as a gate insulator, show unipolar p-channel “inversion” operation in ambient air and form complementary monolithic, single-semiconductor inverter circuits. The field produced by patterned, grid-controlled negative corona charging and subsequent thermal annealing (before semiconductor deposition) electrostatically induces sufficient positive charges to provide significant hole mobility, ca. 0.011cm2V−1s−1, in response to moderate additional negative gate voltages.
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Dates
Type | When |
---|---|
Created | 18 years, 8 months ago (Dec. 10, 2006, 11:55 a.m.) |
Deposited | 2 years ago (Aug. 4, 2023, 1:47 a.m.) |
Indexed | 4 weeks, 2 days ago (July 30, 2025, 6:47 a.m.) |
Issued | 18 years, 8 months ago (Dec. 1, 2006) |
Published | 18 years, 8 months ago (Dec. 1, 2006) |
Published Online | 18 years, 8 months ago (Dec. 11, 2006) |
Published Print | 18 years, 8 months ago (Dec. 1, 2006) |
@article{Huang_2006, title={Organic field-effect inversion-mode transistors and single-component complementary inverters on charged electrets}, volume={100}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.2388730}, DOI={10.1063/1.2388730}, number={11}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Huang, Cheng and Katz, Howard E. and West, James E.}, year={2006}, month=dec }