Abstract
Carbon-based nanostructures promise near ballistic transport and are being intensively explored for device applications. In this letter, the performance limits of carbon nanoribbon (CNR) field-effect transistors (FETs) and carbon nanotube (CNT) FETs are compared. The ballistic channel conductance and the quantum capacitance of the CNRFET are about a factor of 2 smaller than those of the CNTFET because of the different valley degeneracy factors for CNRs and CNTs. The intrinsic speed of the CNRFET is faster due to a larger average carrier injection velocity. The gate capacitance plays an important role in determining which transistor delivers a larger on current.
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Dates
Type | When |
---|---|
Created | 18 years, 9 months ago (Nov. 15, 2006, 5:16 p.m.) |
Deposited | 2 years ago (July 31, 2023, 9:58 p.m.) |
Indexed | 1 week, 1 day ago (Aug. 23, 2025, 1:02 a.m.) |
Issued | 18 years, 9 months ago (Nov. 13, 2006) |
Published | 18 years, 9 months ago (Nov. 13, 2006) |
Published Online | 18 years, 9 months ago (Nov. 14, 2006) |
Published Print | 18 years, 9 months ago (Nov. 13, 2006) |
@article{Ouyang_2006, title={Comparison of performance limits for carbon nanoribbon and carbon nanotube transistors}, volume={89}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.2387876}, DOI={10.1063/1.2387876}, number={20}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Ouyang, Yijian and Yoon, Youngki and Fodor, James K. and Guo, Jing}, year={2006}, month=nov }