DOI: 10.1063/1.2385859. Enhancement of electrical properties in polycrystalline BiFeO3 thin films

Enhancement of electrical properties in polycrystalline BiFeO3 thin films

10.1063/1.2385859

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Ferroelectric BiFeO3 thin films were grown on Pt∕TiO2∕SiO2∕Si substrates by pulsed-laser deposition. From the x-ray diffraction analysis, the BiFeO3 thin films consist of perovskite single phase, and the crystal structure shows the tetragonal structure with a space group P4mm. The BiFeO3 thin films show enhanced electrical properties with low leakage current density value of ∼10−4A∕cm2 at a maximum applied voltage of 31V. This enhanced electrical resistivity allowed the authors to obtain giant ferroelectric polarization values such as saturation polarizations of 110 and 166μC∕cm2 at room temperature and 80K, respectively.

Bibliography

Yun, K. Y., Ricinschi, D., Kanashima, T., & Okuyama, M. (2006). Enhancement of electrical properties in polycrystalline BiFeO3 thin films. Applied Physics Letters, 89(19).

Authors 4

Kwi Young Yun (first)
Dan Ricinschi (additional)
Takeshi Kanashima (additional)
Masanori Okuyama (additional)

References 14 Referenced 138

10.1126/science.1080615 / Science (2003)
10.1063/1.1764944 / Appl. Phys. Lett. (2004)
10.1143/JJAP.43.L647 / Jpn. J. Appl. Phys., Part 2 (2004)
10.1107/S0108768190006887 / Acta Crystallogr., Sect. B: Struct. Sci. (1990)
10.1063/1.1775045 / J. Appl. Phys. (2004)
10.1063/1.1799234 / Appl. Phys. Lett. (2004)
10.1063/1.1924891 / Appl. Phys. Lett. (2005)
10.1088/0953-8984/18/1/L01 / J. Phys.: Condens. Matter (2006)
10.1103/PhysRevB.67.224107 / Phys. Rev. B (2003)
10.1016/0038-1098(70)90262-0 / Solid State Commun. (1970)
10.1143/JJAP.44.L1231 / Jpn. J. Appl. Phys., Part 2 (2005)
10.1143/JJAP.44.8525 / Jpn. J. Appl. Phys., Part 1 (2005)
10.1063/1.1626267 / Appl. Phys. Lett. (2003)
{'key': '2023070303185469800_c14', 'first-page': 'S1153', 'volume': '42', 'year': '2003', 'journal-title': 'J. Korean Phys. Soc.'} / J. Korean Phys. Soc. (2003)

Dates

Type	When
Created	18 years, 9 months ago (Nov. 8, 2006, 6:04 p.m.)
Deposited	2 years, 1 month ago (July 2, 2023, 11:19 p.m.)
Indexed	1 month ago (July 30, 2025, 6:48 a.m.)
Issued	18 years, 9 months ago (Nov. 6, 2006)
Published	18 years, 9 months ago (Nov. 6, 2006)
Published Online	18 years, 9 months ago (Nov. 8, 2006)
Published Print	18 years, 9 months ago (Nov. 6, 2006)

Funders 0

None

BibTeX

@article{Yun_2006, title={Enhancement of electrical properties in polycrystalline BiFeO3 thin films}, volume={89}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.2385859}, DOI={10.1063/1.2385859}, number={19}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Yun, Kwi Young and Ricinschi, Dan and Kanashima, Takeshi and Okuyama, Masanori}, year={2006}, month=nov }

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