DOI: 10.1063/1.2385216. Experimental evaluation of impact ionization coefficients in AlxGa1−xN based avalanche photodiodes

Experimental evaluation of impact ionization coefficients in AlxGa1−xN based avalanche photodiodes

10.1063/1.2385216

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

The authors report on the metal-organic chemical vapor deposition growth, fabrication, and characterization of high performance solar-blind avalanche photodetectors and the experimental evaluation of the impact ionization coefficients that are obtained from the photomultiplication data. A Schottky barrier, suitable for back and front illuminations, is used to determine the impact ionization coefficients of electrons and holes in an AlGaN based avalanche photodiode.

Bibliography

Tut, T., Gokkavas, M., Butun, B., Butun, S., Ulker, E., & Ozbay, E. (2006). Experimental evaluation of impact ionization coefficients in AlxGa1âxN based avalanche photodiodes. Applied Physics Letters, 89(18).

Authors 6

Turgut Tut (first)
Mutlu Gokkavas (additional)
Bayram Butun (additional)
Serkan Butun (additional)
Erkin Ulker (additional)
Ekmel Ozbay (additional)

References 22 Referenced 43

10.1109/JQE.1974.1068346 / IEEE J. Quantum Electron. (2004)
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10.1049/el:19980535 / Electron. Lett. (1998)
10.1109/16.906443 / IEEE Electron Device Lett. (2001)
10.1063/1.126827 / Appl. Phys. Lett. (2000)
10.1109/3.892557 / IEEE J. Quantum Electron. (2000)
10.1063/1.2219390 / Appl. Phys. Lett. (2006)
10.1063/1.2135952 / Appl. Phys. Lett. (2005)
10.1063/1.2140610 / Appl. Phys. Lett. (2005)
10.1063/1.365392 / J. Appl. Phys. (1997)
10.1007/s100510050590 / Eur. Phys. J. B (1999)
10.1088/0268-1242/17/10/102 / Semicond. Sci. Technol. (2002)
10.1109/55.806100 / IEEE Electron Device Lett. (1999)
{'key': '2023073123423547600_c15', 'first-page': '2838', 'volume': '49', 'year': '2001', 'journal-title': 'Appl. Phys. Lett.'} / Appl. Phys. Lett. (2001)
10.1109/JSTQE.2004.831681 / IEEE J. Sel. Top. Quantum Electron. (2004)
10.1016/j.sse.2004.07.009 / Solid-State Electron. (2005)
{'first-page': '78', 'volume-title': 'Semiconductor Devices Physics and Technology', 'year': '1985', 'key': '2023073123423547600_c18'} / Semiconductor Devices Physics and Technology (1985)
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Dates

Type	When
Created	18 years, 10 months ago (Nov. 3, 2006, 6:42 p.m.)
Deposited	2 years, 1 month ago (July 31, 2023, 7:43 p.m.)
Indexed	1 week, 5 days ago (Aug. 26, 2025, 3:07 a.m.)
Issued	18 years, 10 months ago (Oct. 30, 2006)
Published	18 years, 10 months ago (Oct. 30, 2006)
Published Online	18 years, 10 months ago (Nov. 3, 2006)
Published Print	18 years, 10 months ago (Oct. 30, 2006)

Funders 0

None

BibTeX

@article{Tut_2006, title={Experimental evaluation of impact ionization coefficients in AlxGa1−xN based avalanche photodiodes}, volume={89}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.2385216}, DOI={10.1063/1.2385216}, number={18}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Tut, Turgut and Gokkavas, Mutlu and Butun, Bayram and Butun, Serkan and Ulker, Erkin and Ozbay, Ekmel}, year={2006}, month=oct }

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