Crossref journal-article
AIP Publishing
Applied Physics Letters (317)
Abstract

The (Ga,Mn)N nanowires with different Mn concentrations of 0.5%–10% were synthesized by varying the separation between MnCl2 and GaN powders under NH3 gas flow via the chemical vapor deposition method. The structural analyses demonstrate that all the nanowires are a single crystal without secondary phases. The room-temperature ferromagnetism was found to depend on Mn concentration in the (Ga,Mn)N nanowires which were converted from n type to p type with increasing Mn concentration. In particular, the highest magnetic moment was shown in the p-type (Ga,Mn)N nanowires with Mn concentration of 5% and hole concentration of 1017cm−3.

Bibliography

Ham, M.-H., & Myoung, J.-M. (2006). Doping concentration dependence of ferromagnetic ordering in (Ga,Mn)N nanowires. Applied Physics Letters, 89(17).

Authors 2
  1. Moon-Ho Ham (first)
  2. Jae-Min Myoung (additional)
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Dates
Type When
Created 18 years, 10 months ago (Oct. 25, 2006, 6:05 p.m.)
Deposited 2 years, 1 month ago (July 15, 2023, 7:44 p.m.)
Indexed 1 month ago (July 30, 2025, 6:47 a.m.)
Issued 18 years, 10 months ago (Oct. 23, 2006)
Published 18 years, 10 months ago (Oct. 23, 2006)
Published Online 18 years, 10 months ago (Oct. 25, 2006)
Published Print 18 years, 10 months ago (Oct. 23, 2006)
Funders 0

None

@article{Ham_2006, title={Doping concentration dependence of ferromagnetic ordering in (Ga,Mn)N nanowires}, volume={89}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.2364882}, DOI={10.1063/1.2364882}, number={17}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Ham, Moon-Ho and Myoung, Jae-Min}, year={2006}, month=oct }