Abstract
The (Ga,Mn)N nanowires with different Mn concentrations of 0.5%–10% were synthesized by varying the separation between MnCl2 and GaN powders under NH3 gas flow via the chemical vapor deposition method. The structural analyses demonstrate that all the nanowires are a single crystal without secondary phases. The room-temperature ferromagnetism was found to depend on Mn concentration in the (Ga,Mn)N nanowires which were converted from n type to p type with increasing Mn concentration. In particular, the highest magnetic moment was shown in the p-type (Ga,Mn)N nanowires with Mn concentration of 5% and hole concentration of 1017cm−3.
References
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Dates
Type | When |
---|---|
Created | 18 years, 10 months ago (Oct. 25, 2006, 6:05 p.m.) |
Deposited | 2 years, 1 month ago (July 15, 2023, 7:44 p.m.) |
Indexed | 1 month ago (July 30, 2025, 6:47 a.m.) |
Issued | 18 years, 10 months ago (Oct. 23, 2006) |
Published | 18 years, 10 months ago (Oct. 23, 2006) |
Published Online | 18 years, 10 months ago (Oct. 25, 2006) |
Published Print | 18 years, 10 months ago (Oct. 23, 2006) |
@article{Ham_2006, title={Doping concentration dependence of ferromagnetic ordering in (Ga,Mn)N nanowires}, volume={89}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.2364882}, DOI={10.1063/1.2364882}, number={17}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Ham, Moon-Ho and Myoung, Jae-Min}, year={2006}, month=oct }