DOI: 10.1063/1.2363959. InGaAs metal-oxide-semiconductor capacitors with HfO2 gate dielectric grown by atomic-layer deposition

InGaAs metal-oxide-semiconductor capacitors with HfO2 gate dielectric grown by atomic-layer deposition

10.1063/1.2363959

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

The influence of various process conditions on the structural integrity and electrical properties of Al∕HfO2∕p-In0.13Ga0.87As metal-oxide-semiconductor capacitors was investigated. Room temperature capacitance voltage measurements revealed postdielectric deposition anneal reduced hysteresis by more than 0.5V and sulfur passivation of InGaAs improved the capacitance frequency dispersion properties as well as reduced interface trap density. At V=VFB−1V, the leakage current densities ∼1.3×10−7, 0.4×10−6, and 1.3×10−6A∕cm2 were measured in devices with annealed HfO2 (110 and 32Å) and sulfur-passivated InGaAs (110Å unannealed HfO2), respectively. Transmission electron microscopy revealed sharp epitaxial InGaAs/crystalline HfO2 and GaAs∕InGaAs interfaces.

Bibliography

Goel, N., Majhi, P., Chui, C. O., Tsai, W., Choi, D., & Harris, J. S. (2006). InGaAs metal-oxide-semiconductor capacitors with HfO2 gate dielectric grown by atomic-layer deposition. Applied Physics Letters, 89(16).

Authors 6

N. Goel (first)
P. Majhi (additional)
C. O. Chui (additional)
W. Tsai (additional)
D. Choi (additional)
J. S. Harris (additional)

References 13 Referenced 92

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Dates

Type	When
Created	18 years, 10 months ago (Oct. 20, 2006, 6:30 p.m.)
Deposited	2 years, 2 months ago (June 23, 2023, 5:20 a.m.)
Indexed	4 days, 23 hours ago (Aug. 30, 2025, 12:42 p.m.)
Issued	18 years, 10 months ago (Oct. 16, 2006)
Published	18 years, 10 months ago (Oct. 16, 2006)
Published Online	18 years, 10 months ago (Oct. 20, 2006)
Published Print	18 years, 10 months ago (Oct. 16, 2006)

Funders 0

None

BibTeX

@article{Goel_2006, title={InGaAs metal-oxide-semiconductor capacitors with HfO2 gate dielectric grown by atomic-layer deposition}, volume={89}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.2363959}, DOI={10.1063/1.2363959}, number={16}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Goel, N. and Majhi, P. and Chui, C. O. and Tsai, W. and Choi, D. and Harris, J. S.}, year={2006}, month=oct }

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