DOI: 10.1063/1.2361089. Characterization of indium tin oxide surfaces and interfaces using low intensity x-ray photoemission spectroscopy

Characterization of indium tin oxide surfaces and interfaces using low intensity x-ray photoemission spectroscopy

10.1063/1.2361089

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

Ultraviolet photoemission spectroscopic (UPS) and x-ray photoemission spectroscopic (XPS) characterizations of indium tin oxide (ITO) surfaces prepared in ambient environment significantly lower the work function of the ITO surface. This artifact complicates the investigation of ITO surfaces and interfaces using XPS and UPS. The presented results demonstrate that, while the exposure of the sample surface to standard UPS UV sources results in a reduction of the work function within a second or less, XPS measurements show a more gradual work function change over the course of hundreds of seconds. This allowed the design of a measurement protocol based on low intensity x-ray photoelectron spectroscopy work function measurements, which do not cause significant work function changes during the exposure time needed for characterization. Applying this technique, the orbital lineup between the highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital of the semiconducting polymer poly(3-hexylthiophene) (P3HT) and the valence and conduction bands of ITO were determined. The results indicate that it is appropriate to describe the ITO/P3HT junction as semiconductor heterojunction, and that hole injection most likely occurs between ITO conduction band minimum and P3HT HOMO.

Bibliography

Yi, Y., Lyon, J. E., Beerbom, M. M., & Schlaf, R. (2006). Characterization of indium tin oxide surfaces and interfaces using low intensity x-ray photoemission spectroscopy. Journal of Applied Physics, 100(9).

Authors 4

Y. Yi (first)
J. E. Lyon (additional)
M. M. Beerbom (additional)
R. Schlaf (additional)

References 26 Referenced 42

10.1109/2944.999190 / IEEE J. Sel. Top. Quantum Electron. (2002)
10.1016/S0927-796X(02)00093-1 / Mater. Sci. Eng., R. (2002)
10.1016/S0927-0248(00)00246-4 / Sol. Energy Mater. Sol. Cells (2001)
10.1557/JMR.2004.0252 / J. Mater. Res. (2004)
10.1016/S0379-6779(98)00162-3 / Synth. Met. (1999)
10.1016/S0379-6779(98)80088-X / Synth. Met. (1998)
10.1016/S0009-2614(99)00824-6 / Chem. Phys. Lett. (1999)
10.1016/S0379-6779(99)00355-0 / Synth. Met. (2000)
10.1063/1.371901 / J. Appl. Phys. (2000)
10.1063/1.371859 / J. Appl. Phys. (2000)
10.1063/1.124692 / Appl. Phys. Lett. (1999)
10.1063/1.126449 / Appl. Phys. Lett. (2000)
10.1063/1.123397 / Appl. Phys. Lett. (1999)
10.1016/S0379-6779(99)00354-9 / Synth. Met. (2000)
10.1016/j.tsf.2003.08.067 / Thin Solid Films (2003)
10.1016/S0368-2048(01)00310-3 / J. Electron Spectrosc. Relat. Phenom. (2001)
10.1016/j.elspec.2006.02.001 / J. Electron Spectrosc. Relat. Phenom. (2006)
10.1063/1.1588358 / J. Appl. Phys. (2003)
10.1016/j.ssi.2004.07.065 / Solid State Ionics (2004)
10.1063/1.1833582 / J. Appl. Phys. (2005)
{'volume-title': 'Low Energy Electrons and Surface Chemistry', 'year': '1985', 'key': '2023080107023608800_c21'} / Low Energy Electrons and Surface Chemistry (1985)
10.1016/S0039-6028(00)00232-6 / Surf. Sci. (2000)
10.1063/1.371578 / J. Appl. Phys. (1999)
10.1063/1.1949276 / J. Appl. Phys. (2005)
10.1063/1.2172069 / Appl. Phys. Lett. (2006)
10.1021/ja00106a027 / J. Am. Chem. Soc. (1995)

Dates

Type	When
Created	18 years, 9 months ago (Nov. 16, 2006, 9:55 a.m.)
Deposited	2 years, 1 month ago (Aug. 1, 2023, 3:02 a.m.)
Indexed	2 weeks ago (Aug. 19, 2025, 6:32 a.m.)
Issued	18 years, 10 months ago (Nov. 1, 2006)
Published	18 years, 10 months ago (Nov. 1, 2006)
Published Online	18 years, 9 months ago (Nov. 15, 2006)
Published Print	18 years, 10 months ago (Nov. 1, 2006)

Funders 0

None

BibTeX

@article{Yi_2006, title={Characterization of indium tin oxide surfaces and interfaces using low intensity x-ray photoemission spectroscopy}, volume={100}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.2361089}, DOI={10.1063/1.2361089}, number={9}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Yi, Y. and Lyon, J. E. and Beerbom, M. M. and Schlaf, R.}, year={2006}, month=nov }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        8,
        19
      ]
    ],
    "date-time": "2025-08-19T10:32:56Z",
    "timestamp": 1755599576594,
    "version": "3.41.2"
  },
  "reference-count": 26,
  "publisher": "AIP Publishing",
  "issue": "9",
  "content-domain": {
    "domain": [
      "pubs.aip.org"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        2006,
        11,
        1
      ]
    ]
  },
  "abstract": "<jats:p>Ultraviolet photoemission spectroscopic (UPS) and x-ray photoemission spectroscopic (XPS) characterizations of indium tin oxide (ITO) surfaces prepared in ambient environment significantly lower the work function of the ITO surface. This artifact complicates the investigation of ITO surfaces and interfaces using XPS and UPS. The presented results demonstrate that, while the exposure of the sample surface to standard UPS UV sources results in a reduction of the work function within a second or less, XPS measurements show a more gradual work function change over the course of hundreds of seconds. This allowed the design of a measurement protocol based on low intensity x-ray photoelectron spectroscopy work function measurements, which do not cause significant work function changes during the exposure time needed for characterization. Applying this technique, the orbital lineup between the highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital of the semiconducting polymer poly(3-hexylthiophene) (P3HT) and the valence and conduction bands of ITO were determined. The results indicate that it is appropriate to describe the ITO/P3HT junction as semiconductor heterojunction, and that hole injection most likely occurs between ITO conduction band minimum and P3HT HOMO.</jats:p>",
  "DOI": "10.1063/1.2361089",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2006,
        11,
        16
      ]
    ],
    "date-time": "2006-11-16T14:55:08Z",
    "timestamp": 1163688908000
  },
  "update-policy": "https://doi.org/10.1063/aip-crossmark-policy-page",
  "source": "Crossref",
  "is-referenced-by-count": 42,
  "title": "Characterization of indium tin oxide surfaces and interfaces using low intensity x-ray photoemission spectroscopy",
  "prefix": "10.1063",
  "volume": "100",
  "author": [
    {
      "given": "Y.",
      "family": "Yi",
      "sequence": "first",
      "affiliation": [
        {
          "name": "University of South Florida Department of Electrical Engineering, , Tampa, Florida 33620"
        }
      ]
    },
    {
      "given": "J. E.",
      "family": "Lyon",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "University of South Florida Department of Electrical Engineering, , Tampa, Florida 33620"
        }
      ]
    },
    {
      "given": "M. M.",
      "family": "Beerbom",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "University of South Florida Department of Electrical Engineering, , Tampa, Florida 33620"
        }
      ]
    },
    {
      "given": "R.",
      "family": "Schlaf",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "University of South Florida Department of Electrical Engineering, , Tampa, Florida 33620"
        }
      ]
    }
  ],
  "member": "317",
  "published-online": {
    "date-parts": [
      [
        2006,
        11,
        15
      ]
    ]
  },
  "reference": [
    {
      "key": "2023080107023608800_c1",
      "doi-asserted-by": "publisher",
      "first-page": "346",
      "DOI": "10.1109/2944.999190",
      "volume": "8",
      "year": "2002",
      "journal-title": "IEEE J. Sel. Top. Quantum Electron."
    },
    {
      "key": "2023080107023608800_c2",
      "doi-asserted-by": "publisher",
      "first-page": "143",
      "DOI": "10.1016/S0927-796X(02)00093-1",
      "volume": "39",
      "year": "2002",
      "journal-title": "Mater. Sci. Eng., R."
    },
    {
      "key": "2023080107023608800_c3",
      "doi-asserted-by": "publisher",
      "first-page": "173",
      "DOI": "10.1016/S0927-0248(00)00246-4",
      "volume": "68",
      "year": "2001",
      "journal-title": "Sol. Energy Mater. Sol. Cells"
    },
    {
      "key": "2023080107023608800_c4",
      "doi-asserted-by": "publisher",
      "first-page": "1924",
      "DOI": "10.1557/JMR.2004.0252",
      "volume": "19",
      "year": "2004",
      "journal-title": "J. Mater. Res."
    },
    {
      "key": "2023080107023608800_c5",
      "doi-asserted-by": "publisher",
      "first-page": "163",
      "DOI": "10.1016/S0379-6779(98)00162-3",
      "volume": "100",
      "year": "1999",
      "journal-title": "Synth. Met."
    },
    {
      "key": "2023080107023608800_c6",
      "doi-asserted-by": "publisher",
      "first-page": "207",
      "DOI": "10.1016/S0379-6779(98)80088-X",
      "volume": "92",
      "year": "1998",
      "journal-title": "Synth. Met."
    },
    {
      "key": "2023080107023608800_c7",
      "doi-asserted-by": "publisher",
      "first-page": "391",
      "DOI": "10.1016/S0009-2614(99)00824-6",
      "volume": "310",
      "year": "1999",
      "journal-title": "Chem. Phys. Lett."
    },
    {
      "key": "2023080107023608800_c8",
      "doi-asserted-by": "publisher",
      "first-page": "315",
      "DOI": "10.1016/S0379-6779(99)00355-0",
      "volume": "111",
      "year": "2000",
      "journal-title": "Synth. Met."
    },
    {
      "key": "2023080107023608800_c9",
      "doi-asserted-by": "publisher",
      "first-page": "572",
      "DOI": "10.1063/1.371901",
      "volume": "87",
      "year": "2000",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2023080107023608800_c10",
      "doi-asserted-by": "publisher",
      "first-page": "295",
      "DOI": "10.1063/1.371859",
      "volume": "87",
      "year": "2000",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2023080107023608800_c11",
      "doi-asserted-by": "publisher",
      "first-page": "1357",
      "DOI": "10.1063/1.124692",
      "volume": "75",
      "year": "1999",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023080107023608800_c12",
      "doi-asserted-by": "publisher",
      "first-page": "2704",
      "DOI": "10.1063/1.126449",
      "volume": "76",
      "year": "2000",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023080107023608800_c13",
      "doi-asserted-by": "publisher",
      "first-page": "880",
      "DOI": "10.1063/1.123397",
      "volume": "74",
      "year": "1999",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023080107023608800_c14",
      "doi-asserted-by": "publisher",
      "first-page": "311",
      "DOI": "10.1016/S0379-6779(99)00354-9",
      "volume": "111",
      "year": "2000",
      "journal-title": "Synth. Met."
    },
    {
      "key": "2023080107023608800_c15",
      "doi-asserted-by": "publisher",
      "first-page": "342",
      "DOI": "10.1016/j.tsf.2003.08.067",
      "volume": "445",
      "year": "2003",
      "journal-title": "Thin Solid Films"
    },
    {
      "key": "2023080107023608800_c16",
      "doi-asserted-by": "publisher",
      "first-page": "149",
      "DOI": "10.1016/S0368-2048(01)00310-3",
      "volume": "120",
      "year": "2001",
      "journal-title": "J. Electron Spectrosc. Relat. Phenom."
    },
    {
      "key": "2023080107023608800_c17",
      "doi-asserted-by": "crossref",
      "first-page": "12",
      "DOI": "10.1016/j.elspec.2006.02.001",
      "volume": "152",
      "year": "2006",
      "journal-title": "J. Electron Spectrosc. Relat. Phenom."
    },
    {
      "key": "2023080107023608800_c18",
      "doi-asserted-by": "publisher",
      "first-page": "2440",
      "DOI": "10.1063/1.1588358",
      "volume": "94",
      "year": "2003",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2023080107023608800_c19",
      "doi-asserted-by": "publisher",
      "first-page": "141",
      "DOI": "10.1016/j.ssi.2004.07.065",
      "volume": "173",
      "year": "2004",
      "journal-title": "Solid State Ionics"
    },
    {
      "key": "2023080107023608800_c20",
      "doi-asserted-by": "publisher",
      "first-page": "024909",
      "DOI": "10.1063/1.1833582",
      "volume": "97",
      "year": "2005",
      "journal-title": "J. Appl. Phys."
    },
    {
      "volume-title": "Low Energy Electrons and Surface Chemistry",
      "year": "1985",
      "key": "2023080107023608800_c21"
    },
    {
      "key": "2023080107023608800_c22",
      "doi-asserted-by": "publisher",
      "first-page": "142",
      "DOI": "10.1016/S0039-6028(00)00232-6",
      "volume": "450",
      "year": "2000",
      "journal-title": "Surf. Sci."
    },
    {
      "key": "2023080107023608800_c23",
      "doi-asserted-by": "publisher",
      "first-page": "5678",
      "DOI": "10.1063/1.371578",
      "volume": "86",
      "year": "1999",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2023080107023608800_c24",
      "doi-asserted-by": "publisher",
      "first-page": "023512",
      "DOI": "10.1063/1.1949276",
      "volume": "98",
      "year": "2005",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2023080107023608800_c25",
      "doi-asserted-by": "publisher",
      "first-page": "062104",
      "DOI": "10.1063/1.2172069",
      "volume": "88",
      "year": "2006",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2023080107023608800_c26",
      "doi-asserted-by": "publisher",
      "first-page": "233",
      "DOI": "10.1021/ja00106a027",
      "volume": "117",
      "year": "1995",
      "journal-title": "J. Am. Chem. Soc."
    }
  ],
  "container-title": "Journal of Applied Physics",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://pubs.aip.org/aip/jap/article-pdf/doi/10.1063/1.2361089/14973898/093719_1_online.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://pubs.aip.org/aip/jap/article-pdf/doi/10.1063/1.2361089/14973898/093719_1_online.pdf",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2023,
        8,
        1
      ]
    ],
    "date-time": "2023-08-01T07:02:47Z",
    "timestamp": 1690873367000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://pubs.aip.org/jap/article/100/9/093719/918583/Characterization-of-indium-tin-oxide-surfaces-and"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        2006,
        11,
        1
      ]
    ]
  },
  "references-count": 26,
  "journal-issue": {
    "issue": "9",
    "published-print": {
      "date-parts": [
        [
          2006,
          11,
          1
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1063/1.2361089",
  "relation": {},
  "ISSN": [
    "0021-8979",
    "1089-7550"
  ],
  "subject": [],
  "published-other": {
    "date-parts": [
      [
        2006,
        11,
        1
      ]
    ]
  },
  "published": {
    "date-parts": [
      [
        2006,
        11,
        1
      ]
    ]
  },
  "article-number": "093719"
}