DOI: 10.1063/1.2360225. Growth mechanism of Si nanowhiskers and SiGe heterostructures in Si nanowhiskers: X-ray scattering and electron microscopy investigations

Growth mechanism of Si nanowhiskers and SiGe heterostructures in Si nanowhiskers: X-ray scattering and electron microscopy investigations

10.1063/1.2360225

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Silicon nanowhiskers have been grown by molecular beam epitaxy on Si (111) by vapor-liquid-solid mechanism induced by gold droplets. Very thin Ge containing layers have been incorporated in Si nanowhiskers in order to grow SiGe heterostructures. Si and Ge growth rate in nanowhiskers, shape, and sidewall facets of nanowhiskers have been investigated by scanning electron microscopy and grazing incidence small angle x-ray scattering. Anomalous grazing incidence x-ray diffraction and transmission electron microscopy observations show a strong intermixing of Si with Ge in nanowhiskers and formation of SiGe heterostructures which are highly strained to Si.

Bibliography

Dujardin, R., Poydenot, V., Devillers, T., Favre-Nicolin, V., Gentile, P., & Barski, A. (2006). Growth mechanism of Si nanowhiskers and SiGe heterostructures in Si nanowhiskers: X-ray scattering and electron microscopy investigations. Applied Physics Letters, 89(15).

Authors 6

R. Dujardin (first)
V. Poydenot (additional)
T. Devillers (additional)
V. Favre-Nicolin (additional)
P. Gentile (additional)
A. Barski (additional)

References 12 Referenced 19

10.1126/science.291.5505.851 / Science (2001)
10.1021/nl0487267 / Nano Lett. (2004)
10.1126/science.1062340 / Science (2001)
10.1103/PhysRevB.71.205325 / Phys. Rev. B (2005)
10.1063/1.1762701 / Appl. Phys. Lett. (2004)
10.1063/1.122868 / Appl. Phys. Lett. (1998)
10.1103/PhysRevE.73.021603 / Phys. Rev. E (2006)
10.1103/PhysRevLett.95.146104 / Phys. Rev. Lett. (2005)
10.1103/PhysRevB.58.15647 / Phys. Rev. B (1998)
10.1103/PhysRevLett.92.186101 / Phys. Rev. Lett. (2004)
10.1021/cr0000269 / Chem. Rev. (Washington, D.C.) (2001)
10.1016/j.tsf.2005.07.357 / Thin Solid Films (2006)

Dates

Type	When
Created	18 years, 10 months ago (Oct. 17, 2006, 1:20 p.m.)
Deposited	2 years, 1 month ago (June 25, 2023, 4:01 p.m.)
Indexed	3 weeks, 1 day ago (July 30, 2025, 6:47 a.m.)
Issued	18 years, 10 months ago (Oct. 9, 2006)
Published	18 years, 10 months ago (Oct. 9, 2006)
Published Online	18 years, 10 months ago (Oct. 13, 2006)
Published Print	18 years, 10 months ago (Oct. 9, 2006)

Funders 0

None

BibTeX

@article{Dujardin_2006, title={Growth mechanism of Si nanowhiskers and SiGe heterostructures in Si nanowhiskers: X-ray scattering and electron microscopy investigations}, volume={89}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.2360225}, DOI={10.1063/1.2360225}, number={15}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Dujardin, R. and Poydenot, V. and Devillers, T. and Favre-Nicolin, V. and Gentile, P. and Barski, A.}, year={2006}, month=oct }

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