DOI: 10.1063/1.2358816. Resonant and voltage-tunable terahertz detection in InGaAs∕InP nanometer transistors

Resonant and voltage-tunable terahertz detection in InGaAs∕InP nanometer transistors

10.1063/1.2358816

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

The authors report on detection of terahertz radiation by high electron mobility nanometer InGaAs∕AlInAs transistors. The photovoltaic type of response was observed at the 1.8–3.1THz frequency range, which is far above the cutoff frequency of the transistors. The experiments were performed in the temperature range from 10to80K. The resonant response was observed and was found to be tunable by the gate voltage. The resonances were interpreted as plasma wave excitations in the gated two-dimensional electron gas. The minimum noise equivalent power was estimated, showing possible application of these transistors in sensing of terahertz radiation.

Bibliography

El Fatimy, A., Teppe, F., Dyakonova, N., Knap, W., Seliuta, D., ValuÅ¡is, G., Shchepetov, A., Roelens, Y., Bollaert, S., Cappy, A., & Rumyantsev, S. (2006). Resonant and voltage-tunable terahertz detection in InGaAsâInP nanometer transistors. Applied Physics Letters, 89(13).

Authors 11

A. El Fatimy (first)
F. Teppe (additional)
N. Dyakonova (additional)
W. Knap (additional)
D. Seliuta (additional)
G. Valušis (additional)
A. Shchepetov (additional)
Y. Roelens (additional)
S. Bollaert (additional)
A. Cappy (additional)
S. Rumyantsev (additional)

References 12 Referenced 183

10.1103/PhysRevLett.71.2465 / Phys. Rev. Lett. (1993)
10.1109/16.485650 / IEEE Trans. Electron Devices (1996)
10.1063/1.1468257 / J. Appl. Phys. (2002)
10.1063/1.1473685 / Appl. Phys. Lett. (2002)
10.1063/1.1525851 / Appl. Phys. Lett. (2002)
10.1063/1.1497433 / Appl. Phys. Lett. (2002)
10.1063/1.2005394 / Appl. Phys. Lett. (2005)
10.1063/1.1952578 / Appl. Phys. Lett. (2005)
10.1063/1.2128057 / Appl. Phys. Lett. (2005)
{'year': '1999', 'key': '2023070219423677300_c9'} (1999)
10.1109/LED.2002.802679 / IEEE Electron Device Lett. (2002)
10.1063/1.1993747 / Appl. Phys. Lett. (2005)

Dates

Type	When
Created	18 years, 11 months ago (Oct. 3, 2006, 11:15 a.m.)
Deposited	2 years, 2 months ago (July 2, 2023, 3:42 p.m.)
Indexed	4 weeks ago (Aug. 6, 2025, 8:23 a.m.)
Issued	18 years, 11 months ago (Sept. 25, 2006)
Published	18 years, 11 months ago (Sept. 25, 2006)
Published Online	18 years, 11 months ago (Sept. 29, 2006)
Published Print	18 years, 11 months ago (Sept. 25, 2006)

Funders 0

None

BibTeX

@article{El_Fatimy_2006, title={Resonant and voltage-tunable terahertz detection in InGaAs∕InP nanometer transistors}, volume={89}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.2358816}, DOI={10.1063/1.2358816}, number={13}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={El Fatimy, A. and Teppe, F. and Dyakonova, N. and Knap, W. and Seliuta, D. and Valušis, G. and Shchepetov, A. and Roelens, Y. and Bollaert, S. and Cappy, A. and Rumyantsev, S.}, year={2006}, month=sep }

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